PTVA123501EC
PTVA123501FC
Thermally-Enhanced High Power RF LDMOS FETs
350 W, 50 V, 1200 – 1400 MHz
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed
for use in power amplifier applications in the 1200 MHz to 1400 MHz
frequency band. Features include high gain and thermally-enhanced
package with slotted and earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTVA123501EC
Package H-36248-2
PTVA123501FC
Package H-37248-2
Power Sweep, Pulsed RF
I
DQ
= 150 mA, V
DD
= 50 V, T
CASE
= 25°C,
300
μs
pulse width, 12% duty cycle
60
55
50
45
40
35
30
30
32
Efficiency
Output Power
80
70
Features
•
Drain Efficiency (%)
•
•
•
•
•
•
Broadband internal input and output matching
High gain and efficiency
Integrated ESD protection
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load
mismatch (all phase angles) at 55.5 dBm
under pulsed conditions: 300 µs pulse width,
12% duty cycle, V
DD
= 50 V
P
OUT
(dBm)
60
50
40
30
20
1200 MHz
1300 MHz
1400 MHz
a123501ec_g1-1
34
36
38
40
42
P
IN
(dBm)
RF Characteristics
Pulsed RF Performance
(tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 0.15 A, P
OUT
= 350 W, ƒ
1
= 1200 MHz, ƒ
2
= 1300 MHz, ƒ
3
= 1400 MHz, 300 µs pulse width, 12% duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
G
ps
Min
16.5
54
—
Typ
17
55
–12
Max
—
—
–9
Unit
dB
%
dB
D
IRL
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
RF Characteristics
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 150 mA, Input signal (t
r
= 5 ns, t
f
= 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test
P
1dB
Mode of
Operation
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
IRL
(dB)
–14
–14
–12
Gain
(dB)
16.2
16.0
15.8
Eff
(%)
59
59
56
P
OUT
(W)
375
390
375
Gain
(dB)
14.2
14.0
13.8
P
3dB
Eff
(%)
59
59
57
P
OUT
(W)
415
435
415
Max
P
droop (pulse)
dB @ 350 W
0.10
0.15
0.15
t
r (ns)
@
350 W
4
4
4
t
f (ns)
@
350 W
5<
5<
5<
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 150 mA, 30 ms pulse width, 30% duty cycle, class AB test
Mode of
Operation
Pulsed RF
Pulsed RF
Pulsed RF
ƒ
(MHz)
1200
1300
1400
P
1dB
Gain
(dB)
16
16
15.5
Eff
(%)
47
47
45
P
OUT
(W)
316
324
315
Gain
(dB)
14
14
13.5
P
3dB
Eff
(%)
48
48
47
P
OUT
(W)
350
355
355
P
droop (pulse)
dB @ 300 W
0.23
0.25
0.29
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
105
—
—
—
3
—
Typ
—
—
—
0.1
3.35
—
Max
—
1.0
10.0
—
4
1.0
Unit
V
µA
µA
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 150 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 300 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
JC
Value
105
–6 to +12
200
–65 to +150
0.34
Unit
V
V
°C
°C
°C/W
Data Sheet
2 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Ordering Information
Type and Version
PTVA123501EC V2
PTVA123501EC V2 R250
PTVA123501FC V1
PTVA123501FC V1 R250
Order Code
PTVA123501ECV2XWSA1
PTVA123501ECV2R250XTMA1
PTVA123501FCV1XWSA1
PTVA123501FCV1R250XTMA1
Package Description
H-36248-2, bolt-down
H-36248-2, bolt-down
H-37248-2, earless
H-37248-2, earless
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
See next page for Typical RF Performance
Data Sheet
3 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Typical RF Performance
(data taken in production test fixture)
Power Sweep, Pulsed RF
I
DQ
= 150 mA, V
DD
= 50 V, T
CASE
= 25°C,
300
μs
pulse width, 12% duty cycle
60
55
50
45
40
35
30
30
32
Efficiency
Output Power
Power Sweep, Pulsed RF
I
DQ
= 150 mA, V
DD
= 50 V, T
CASE
= 25°C,
300
μs
pulse width, 12% duty cycle
80
70
18
17
Drain Efficiency (%)
Gain
P
OUT
(dBm)
50
40
30
20
Gain (dB)
60
16
15
14
1200 MHz
1200 MHz
1300 MHz
1400 MHz
a123501ec_g1-1
13
12
30
32
34
36
38
1300 MHz
1400 MHz
a123501ec_g1-2
34
36
38
40
42
40
42
P
IN
(dBm)
P
IN
(dBm)
Pulsed RF Performance
I
DQ
= 150 mA, V
DD
= 50 V, P
OUT
= 350 W,
300
μs
pulse width, 12% duty cycle
18
Gain
Pulsed RF Performance
I
DQ
= 150 mA, V
DD
= 50 V, P
OUT
= 350 W,
300
μs
pulse width, 12% duty cycle
70
0.2
Power Droop
-12
Drain Efficiency (%)
Power Droop (dB)
17
65
0.15
-14
Gain (dB)
16
60
0.1
IRL
-16
15
Efficiency
55
0.05
-18
14
1150
a123501ec_g1-3
1200
1250
1300
1350
1400
50
1450
0
1100
a123501ec_g1-4
1200
1300
1400
-20
1500
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 13
Rev. 04.1, 2014-06-26
IRL (dB)
PTVA123501EC
Typical RF Performance
(cont.)
Power Sweep, Pulsed RF
I
DQ
= 150 mA,V
DD
= 50 V, T
CASE
= 25°C,
2 ms pulse width, 10% duty cycle
80
Output Power
Power Sweep, Pulsed RF
I
DQ
= 150 mA, V
DD
= 50 V, T
CASE
= 25°C,
2 ms pulse width, 10% duty cycle
60
55
18
17
70
Drain Efficiency (%)
P
OUT
(dBm)
Gain (dB)
50
45
40
1200 MHz
60
50
40
1300 MHz
Efficiency
1400 MHz
a123501ec_g2-1
16
15
14
Gain
1200 MHz
35
30
31
33
35
37
39
30
20
13
12
31
33
35
37
1300 MHz
1400 MHz
a123501ec_g2-2
41
43
39
41
43
P
IN
(dBm)
P
IN
(dBm)
Pulsed RF Performance
I
DQ
= 150 mA, V
DD
= 50 V, P
OUT
= 350 W,
2 ms pulse width, 10% duty cycle
18
70
0.3
Pulsed RF Performance
I
DQ
= 150 mA, V
DD
= 50 V, P
OUT
= 350 W,
2 ms pulse width, 10% duty cycle
-10
-12
Power Droop (dB)
17
Gain
65
Drain Efficiency (%)
0.25
0.2
0.15
IRL
Power Droop
Gain (dB)
16
60
-16
-18
-20
1500
15
Efficiency
55
0.1
0.05
1100
14
1150
a123501ec_g2-3
1200
1250
1300
1350
1400
50
1450
a123501ec_g2-4
1200
1300
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 13
Rev. 04.1, 2014-06-26
IRL (dB)
-14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
