d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
www.vishay.com
1
New Product
Si7772DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1 A
0.48
17
7
10
7
T
C
= 25 °C
27
50
0.65
34
14
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1084
200
77
18.5
8.3
2.8
2
1.3
16
18
15
10
8
11
17
9
2.6
30
35
30
20
16
22
34
18
ns
Ω
28
12.5
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.0105
0.013
37
0.013
0.0165
0.028
2
30
1.2
2.5
± 100
0.2
20
V
nA
mA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
New Product
Si7772DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
10
40
I
D
- Drain Current (A)
8
30
6
20
V
GS
= 3
V
10
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0165
1500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.0150
V
GS
= 4.5
V
C - Capacitance (pF)
1200
C
iss
0.0135
900
0.0120
600
0.0105
V
GS
= 10
V
300
C
rss
0
5
10
C
oss
0.0090
0
10
20
30
40
50
0
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 20
V
4
R
DS(on)
- On-Resistance
1.6
1.8
I
D
= 15 A
Capacitance
1.4
(Normalized)
V
GS
= 10
V
V
GS
= 4.5
V
1.2
V
DS
= 15
V
1.0
2
0.8
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
Si7772DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.04
0.03
0.02
T
J
= 125 °C
0.01
0.01
T
J
= 25 °C
0.00
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
10
-1
80
On-Resistance vs. Gate-to-Source Voltage
10
-2
64
I
R
- Reverse (A)
10
-3
Power (W)
30
V
10
-4
10
V
48
32
10
-5
20
V
16
10
-6
10
-7
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
1s
10 s
DC
BVDSS Limited
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65169
S09-1822-Rev. A, 14-Sep-09
New Product
Si7772DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
46.0
36.8
I
D
- Drain Current (A)
27.6
18.4
9.2
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
36.0
2.20
28.8
1.76
Power (W)
Power (W)
21.6
1.32
14.4
0.88
7.2
0.44
0.0
0
25
50
75
100
125
150
0.00
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
