Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.018 at V
GS
= 10 V
0.023 at V
GS
= 4.5 V
0.018 at V
GS
= 10 V
0.022 at V
GS
= 4.5 V
I
D
(A)
a
Q
g
(Typ.)
10
8.5
10.5
9.3
6.6
8.9
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT
®
Plus
Integrated Schottky
• 100 % R
g
Tested
APPLICATIONS
• DC/DC Converters
- Notebook
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V at 1.0 A
I
F
(A)
2.0
D
1
SO-8
G
1
D
1
D
1
G
2
S
2
1
2
3
4
Top View
Ordering Information:
Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
G
1
S
1
/D
2
S
1
/D
2
S
1
/D
2
Schottky Diode
G
2
N-Channel 2
MOSFET
S
2
N-Channel 1
MOSFET
S
1
/D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
SM
I
AS
E
AS
3.3
2.1
1.9
a, b, c
1.2
a, b, c
I
D
Symbol
V
DS
V
GS
10
8
7.5
a, b, c
6
a ,b, c
40
3
1.7
a, b, c
40
15
11.2
3.5
2.2
2.0
a, b, c
1.3
a, b, c
°C
W
mJ
Channel-1
30
20
10.5
8.3
7.8
a, b, c
6.3
a, b, c
40
3.2
1.8
a, b, c
40
A
Channel-2
Unit
V
- 55 to 150
Si4916DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ.
54
32
Max.
65
38
47
30
Channel-2
Typ.
Max.
60
35
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
I
D
= 250 µA
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 10.5 A
V
GS
= 4.5 V, I
D
= 8.5 A
V
GS
= 4.5 V, I
D
= 9.3 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
g
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= - 10.5 A
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.5
6.6
8.9
2.9
3.4
2.3
2.4
1.9
2.3
2.9
3.5
Ω
10
14
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 10.5 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= 1 A, V
GS
= 0 V
V
GS
= 0 V, I
D
= 250 µA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.0145
0.015
0.019
0.018
30
35
0.75
0.47
1.1
0.5
0.018
0.018
0.023
0.022
S
V
Ω
1.5
1.5
30
30
24
25
-6
-6
3.0
2.7
100
100
1
100
15
2000
A
µA
nA
V
V
mV/°C
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Si4916DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
a
t
b
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.3 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 µA/µs
I
F
= 1.3 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 µA/µs
I
F
= 1.3 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 µA/µs
I
F
= 1.3 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 µA/µs
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8
9
11
13
21
27
6
9
28
24
17
12
12
11
16
13
ns
15
15
18
20
32
40
10
15
40
35
nC
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125 °C
V
R
= 30 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 30 V, T
J
= 100 °C
V
R
= - 30 V, T
J
= 125 °C
V
R
= 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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随着阅读器与标签价格的降低和全球市场的扩大，射频标识 RFID(以下简称RFID)的应用与日俱增。标签既可由阅读器供电(无源标签)，也可以由标签的板上电源供电(半有源标签和有源标签)。由于亚微型无源 CMOS 标签的成本降低，库存和其他应用迅速增加。一些评估表明，随着无源标签的价格持续下降，几乎每一个售出产品的内部都将有一个 RFID 标签。由于无源 RFID 标签的重要性及其独特的工程实现...[详细]
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