Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.021 at V
GS
= 10 V
0.027 at V
GS
= 4.5 V
0.020 at V
GS
= 10 V
0.025 at V
GS
= 4.5 V
I
D
(A)
a
Q
g
(Typ.)
8.4
7.4
8
d
8
d
6.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus
Integrated Schottky
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
7.0
APPLICATIONS
• Notebook PC
- System Power dc-to-dc
I
F
(A)
2.0
D
1
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V at 1.0 A
SO-8
G
1
D
1
D
1
G
2
S
2
1
2
3
4
Top View
Ordering Information:
Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
G
1
S
1
/D
2
S
1
/D
2
S
1
/D
2
G
2
N-Channel 2
MOSFET
S
2
Schottky Diode
N-Channel 1
MOSFET
S
1
/D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
1
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
SM
I
AS
E
AS
2.7
1.7
1.7
b, c
1.1
b, c
- 55 to 150
I
D
Symbol
V
DS
V
GS
8.4
6.7
6.7
b, c
5.3
b, c
40
2.4
1.0
b, c
40
15
11.2
3.1
2.0
2.0
b, c
1.2
b, c
°C
W
mJ
Channel-1
30
20
8
d
7.4
7.4
b, c
5.7
b, c
40
2.8
1.1
b, c
40
A
Channel-2
Unit
V
Si4914BDY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ.
59
36
Max.
70
45
52
32
Channel-2
Typ.
Max.
62.5
40
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 6 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
g
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6.7
7.0
2.8
2.8
2.0
2.0
2.9
2.0
6.0
4.0
Ω
10.5
11.0
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 8 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.0165
0.0155
0.0215
0.020
29
33
0.77
0.46
1.1
0.5
0.021
0.020
0.027
0.025
S
V
Ω
1.2
1.2
30
30
35
- 6.2
2.7
2.7
100
100
1
100
15
10000
A
µA
nA
V
V
mV/°C
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Si4914BDY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
a
t
b
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
I
F
= 2.2 A, dI/dt = 100 A/µs
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9
10
10
9
16
16
9
8
35
21
40
11
19
11
16
10
ns
18
20
20
18
32
32
18
16
55
35
nC
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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