Si1539DDL-T1-GE3 (lead (Pb)-free and halogen free)
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Source-Drain Current Diode Current
Pulsed Drain Current (t = 100 μs)
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
S
I
DM
I
D
SYMBOL
V
DS
V
GS
N-CHANNEL
30
± 20
0.7
0.6
0.7
b, c
0.5
b, c
0.3
0.2
b, c
2
0.34
0.22
0.29
b, c
0.18
b, c
-55 to +150
P-CHANNEL
-30
± 30
-0.46
-0.36
-0.42
b, c
-0.33
b, c
-0.3
-0.2
b, c
-1
0.34
0.22
0.29
b, c
0.18
b, c
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
SYMBOL
R
thJA
R
thJF
N-CHANNEL
TYP.
365
308
MAX.
438
370
P-CHANNEL
TYP.
365
308
MAX.
438
370
UNIT
°C/W
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel).
S15-0596-Rev. A, 30-Mar-15
Document Number: 62999
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1539DDL
www.vishay.com
Vishay Siliconix
TYP.
a
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 30 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 0.6 A
V
GS
= -10 V, I
D
= -0.4 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 0.1A
V
GS
= -5 V, I
D
= -0.1 A
V
GS
= -4.35 V, I
D
= -0.1 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Output Capacitance
C
oss
P-Channel
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 10 V, I
D
= 0.6 A
Total Gate Charge
Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -0.4 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V I
D
= 0.6 A
Gate-Source Charge
Q
gs
P-Channel
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -0.4 A
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
f = 1 MHz
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
0.3
28
21
10
10
5
6
1
1.5
0.55
0.8
0.2
0.4
0.2
0.35
3.7
15
-
-
-
-
-
-
1.5
3
1.1
1.2
-
-
-
-
7.4
30
Ω
nC
pF
g
fs
V
DS
= 15 V, I
D
= 0.6 A
V
DS
= -15 V, I
D
= -0.4 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
-
-
-
-
1.2
-1.5
-
-
-
-
-
-
2
-1
-
-
-
-
-
-
-
-
-
30
-25
-3.6
3.1
-
-
-
-
-
-
-
-
-
-
0.323
0.890
0.437
1.850
2.800
1.2
0.6
-
-
-
-
-
-
2.5
-3
± 100
± 100
1
-1
10
-10
-
-
0.388
1.070
0.525
2.590
-
-
-
S
Ω
A
μA
V
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
MAX.
UNIT
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
V
GS(th)
Gate-Body Leakage
I
GSS
nA
Gate Resistance
R
g
S15-0596-Rev. A, 30-Mar-15
Document Number: 62999
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1539DDL
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 15 V, R
L
= 30
Ω
I
D
≅
0.5 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= -15 V, R
L
= 38
Ω
I
D
≅
-0.4 A, V
GEN
= -10 V, R
g
= 1
Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
V
DD
= 15 V, R
L
= 30
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= -15 V, R
L
= 50
Ω
I
D
≅
-0.3 A, V
GEN
= -4.5 V, R
g
= 1
Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
4
14
18
11
8
9
18
26
22
25
28
14
4
15
18
4
8
21
30
20
16
18
30
39
33
38
42
21
8
23
30
ns
SYMBOL
TEST CONDITIONS
MIN.
TYP.
a
MAX.
UNIT
Vishay Siliconix
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
(t = 100 μs)
Body Diode Voltage
t
f
I
S
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-0.8
10
13
3
8
6
7
4
6
0.3
-0.3
2
-1
1.2
-1.2
20
20
6
16
-
-
-
-
ns
V
A
I
SM
I
S
= 0.5 A
I
S
= -0.4 A
V
SD
N-Ch
P-Ch
N-Ch
P-Ch
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 0.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
P-Channel
I
F
= -0.5 A, dI/dt = -100 A/μs, T
J
= 25 °C
ns
Body Diode Reverse Recovery Charge
Q
rr
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
nC
Reverse Recovery Fall Time
t
a
Reverse Recovery Rise Time
t
b
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0596-Rev. A, 30-Mar-15
Document Number: 62999
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1539DDL
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
V
GS
= 10 V thru 5 V
V
GS
= 4 V
1.5
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.3
T
C
= 25
°C
0.2
0.4
0.5
Vishay Siliconix
1
0.5
V
GS
= 3 V
0.1
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.80
40
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.60
V
GS
= 4.5 V
0.40
V
GS
= 10 V
C - Capacitance (pF)
30
C
iss
20
C
oss
10
C
rss
0.20
0.00
0
0.5
1
I
D
- Drain Current (A)
1.5
2
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 0.6 A
8
V
DS
= 7.5 V
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
1.5
1.8
I
D
= 0.6 A
Capacitance
V
GS
= 10 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.2
2
0.9
0
0
0.3
0.6
0.9
1.2
0.6
- 50
V
GS
= 4.5 V
- 25
0
25
50
75
100
125
150
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
S15-0596-Rev. A, 30-Mar-15
On-Resistance vs. Junction Temperature
Document Number: 62999
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1539DDL
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.8
I
D
= 0.6 A
R
DS(on)
- On-Resistance (Ω)
0.6
T
J
= 125
°C
Vishay Siliconix
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.4
T
J
= 25
°C
0.2
0.1
0.0
0
0.3
0.6
0.9
1.2
1.5
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
2
6.4
On-Resistance vs. Gate-to-Source Voltage
1.8
4.8
1.6
I
D
= 250 μA
Power (W)
125
150
V
GS(th)
(V)
3.2
1.4
1.6
1.2
- 50
- 25
0
25
50
75
100
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by I
DM
Limited by R
DS(on)
*
I
D
- Drain Current (A)
1
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
100 μs
1 ms
0.1
10 ms
100 ms
T
A
= 25
°C
Single
Pulse
0.01
0.1
1
s
10
s,
DC
100
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0596-Rev. A, 30-Mar-15
Document Number: 62999
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
我在planahead中产生ip核时总会有个warning去不掉
如下
Verilog simulation file type 'Behavioral' is not valid for this core. Overriding with simulation file type 'Structural'.
:Cr ......
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
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