SUD50N03-12P-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
30
± 20
16.8
10.6
40
3.6
30
45
39
5.4
a
-55 to +150
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Note
a. Surface mounted on FR4 board, t
≤
10 s.
t
≤
10 s
Steady State
SYMBOL
R
thJA
R
thJC
TYPICAL
18
40
2.6
MAXIMUM
23
50
3.2
°C/W
UNIT
S15-1807-Rev. A, 10-Aug-15
Document Number: 67357
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N03-12P-GE3
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
I
F
= 40 A, V
GS
= 0 V
I
F
= 50 A, dI/dt = 100 A/μs
V
DD
= 15 V, R
L
= 0.3
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 2.5
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.3
-
-
-
-
-
-
-
1600
285
140
28
6
5
1.5
9
15
20
12
-
1.2
25
-
-
-
42
-
-
3.0
15
25
30
20
100
1.5
70
A
V
ns
ns
Ω
nC
pF
g
fs
V
DS
= 15 V, I
D
= 20 A
30
1
-
-
-
40
-
-
-
15
-
-
-
-
-
-
0.0100
-
0.0138
-
-
3
± 100
1
50
-
0.0120
0.0170
0.0175
-
S
Ω
V
nA
μA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
a
MAX.
UNIT
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1807-Rev. A, 10-Aug-15
Document Number: 67357
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N03-12P-GE3
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C unless noted)
80
V
GS
= 10 V thru 5 V
I D - Drain Current (A)
60
I D - Drain Current (A)
60
80
Vishay Siliconix
40
4V
40
T
C
= 125 °C
20
25 °C
20
3V
0
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
0
1
2
3
- 55 °C
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
80
T
C
= - 55 °C
R
DS(on)
- On-Resistance ()
g fs - Transconductance (S)
0.04
0.05
Transfer Characteristics
60
25 °C
125 °C
40
0.03
0.02
V
GS
= 4.5 V
V
GS
= 10 V
20
0.01
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0.00
0
20
40
I
D
- Drain Current (A)
60
80
Transconductance
2500
10
On-Resistance vs. Drain Current
V GS - Gate-to-Source Voltage (V)
2000
C - Capacitance (pF)
C
iss
1500
8
V
DS
= 15 V
I
D
= 50 A
6
1000
4
500
C
rss
0
0
5
10
15
C
oss
2
0
20
25
30
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
S15-1807-Rev. A, 10-Aug-15
Gate Charge
Document Number: 67357
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N03-12P-GE3
www.vishay.com
THERMAL RATINGS
1.6
R
DS(on)
- On-Resistance (Normalized)
I
D
= 15 A
1.4
V
GS
= 10 V
Vishay Siliconix
100
1.2
I S - Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
1.0
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
Source-Drain Diode Forward Voltage
20
Limited by R
DS(on)
*
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
1 ms
10 ms
12
1
100 ms
1s
10 s
8
0.1
4
T
A
= 25
°C
BVDSS Limited
0
0
25
50
75
100
125
150
T
A
- Case Temperature (°C)
0.01
0.1
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
S15-1807-Rev. A, 10-Aug-15
Document Number: 67357
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?67357.
S15-1807-Rev. A, 10-Aug-15
Document Number: 67357
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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