d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2.
g. T
C
= 25 °C.
S15-0144-Rev. A, 02-Feb-15
Document Number: 62979
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ998DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
30
30
1.1
1.1
-
-
-
-
-
-
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.2
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
0.0047
0.0022
0.0065
0.0030
80
165
930
2620
325
902
21
55
0.023
0.021
12
29.5
5.4
13.2
3
7.1
0.75
1.3
10
30
1.5
1.1
MAX.
-
-
2.2
2.2
± 100
± 100
1
150
5
3
-
-
0.0067
0.0028
0.0100
0.0038
-
-
-
-
-
-
-
-
0.046
0.042
18
44.3
8.1
19.8
-
-
-
-
-
-
3
2.2
Ω
nC
pF
S
Ω
mA
A
μA
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
GS(th)
I
GSS
V
V
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 19 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
g
fs
C
iss
C
oss
C
rss
Total Gate Charge
Q
g
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Q
gs
Q
gd
Q
oss
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
S15-0144-Rev. A, 02-Feb-15
Document Number: 62979
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ998DT
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Vishay Siliconix
SYMBOL
TEST CONDITIONS
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Channel-2
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 10 A, V
GS
= 0 V
I
S
= 2 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
25
65
65
10
17
10
10
10
15
25
20
15
22
10
10
-
-
-
-
0.8
0.41
30
47
11
55
18
27
12
20
MAX.
30
50
130
130
20
34
20
20
20
30
50
40
30
44
20
20
20
60
90
130
1.2
0.53
60
94
22
110
-
-
-
-
ns
V
ns
nC
A
ns
UNIT
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0144-Rev. A, 02-Feb-15
Document Number: 62979
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ998DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 4 V
16
20
Vishay Siliconix
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
T
C
= 25
°C
8
T
C
= 125
°C
40
V
GS
= 3 V
20
4
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.010
1200
Transfer Characteristics
0.008
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5 V
0.006
1000
C
iss
800
600
C
oss
400
0.004
V
GS
= 10 V
0.002
200
C
rss
0.000
0
0
20
40
I
D
- Drain Current (A)
60
80
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 19 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 7.5 V
1.8
I
D
= 19 A
Capacitance
1.6
V
GS
= 10 V
1.4
6
V
DS
= 15 V
V
DS
= 24 V
1.2
V
GS
= 4.5 V
1.0
4
2
0.8
0
0
3
6
9
12
15
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0144-Rev. A, 02-Feb-15
On-Resistance vs. Junction Temperature
Document Number: 62979
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ998DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.015
Vishay Siliconix
0.012
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
I
D
= 19 A
0.009
T
J
= 125
°C
0.006
T
J
= 25
°C
0.003
1
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
2.0
1.8
40
1.6
1.4
1.2
I
D
= 250 μA
1.0
10
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Power (W)
V
GS(th)
(V)
30
50
On-Resistance vs. Gate-to-Source Voltage
20
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
10
100 μs
1 ms
10 ms
100 ms
1
s
10
s
DC
BVDSS Limited
1
0.1
T
A
= 25
°C
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0144-Rev. A, 02-Feb-15
Document Number: 62979
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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