d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 13.8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 12.6 A
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 13.8 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 13.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.4
0.2
790
3830
190
670
76
315
14
67.3
6.8
32
2.6
10.8
1.9
9.3
2
1.1
4
2.2
21
105
11
48
nC
pF
g
fs
V
DS
= 10 V, I
D
= 13.8 A
V
DS
= 10 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.0100 0.0120
0.0030 0.0037
0.0120 0.0145
0.0035 0.0045
47
116
S
1
1.2
30
30
33
37
-5
- 7.5
2.2
2.2
± 100
± 100
1
1
5
5
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
For more information please contact:
pmostechsupport@vishay.com
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 10 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
15
30
12
33
20
40
10
12
10
15
12
22
20
40
10
10
Max.
30
60
20
65
40
80
20
25
20
30
20
25
40
80
20
20
16
28
50
110
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.85
0.8
20
30
10
21
11
17
9
13
1.2
1.2
40
60
20
40
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10
V
thru 4
V
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
40
V
GS
= 3
V
30
12
T
C
= 25 °C
8
20
10
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.014
1200
Transfer Characteristics
1000
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5
V
C - Capacitance (pF)
0.012
C
iss
800
0.010
V
GS
= 10
V
600
400
C
oss
200
C
rss
0.008
0.006
0
10
20
30
40
50
60
I
D
- Drain Current (A)
0
0
5
10
15
20
25
V
DS
- Drain-to-Source
Voltage
(V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 13.8 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
= 7.5
V
4
V
DS
= 24
V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
I
D
= 13.8 A
Capacitance
V
GS
= 10
V;
4.5
V
2
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
15
-- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
For more information please contact:
pmostechsupport@vishay.com
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 13.8 A
0.025
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
0.020
T
J
= 125 °C
0.015
T
J
= 25 °C
0.010
T
J
= 150 °C
1
T
J
= 25 °C
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
- Source-to-Drain
Voltage
(V)
2
4
6
8
V
GS
- Gate-to-Source
Voltage
(V)
10
Source-Drain Diode Forward Voltage
1.9
1.8
1.7
1.6
1.5
V
GS(th)
(V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
- 50
- 25
0
25
50
75
100
125
150
10
40
On-Resistance vs. Gate-to-Source Voltage
50
I
D
= 250
µA
Power (W)
30
20
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Single Pulse Power
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1s
10 s
DC
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
语音作为自然的人机接口，可以使车载导航系统实现更安全、更人性化的操作。通过国内外车载导航系统的功能对比可知，支持语音交互是车载导航系统的一个发展趋势。另外，市场信息服务公司J.D Power and Associates的调研数据也表明，56％的消费者更倾向于选择声控的导航系统。因此，开发车载语音导航系统是很有意义的。目前，国内已经具备开发车载语音导航系统的技术基础，特别是文语转换TTS技术...[详细]
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