SiS472ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
Symbol
V
DS
V
GS
Limit
30
± 20
24
g
24
g
15
b, c
12
b, c
60
24
g
3.2
b, c
10
5
28
18
3.5
b, c
2.2
b, c
- 55 to 150
260
Unit
V
I
D
I
DM
I
S
I
AS
E
AS
A
mJ
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Base on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK
®
1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 62629
S12-1623-Rev. A, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS472ADN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.75
15
7
8
7
T
C
= 25 °C
24
60
1.1
30
14
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1515
202
142
29
12.8
3.8
4.1
1.2
18
23
22
11
12
14
22
8
2.4
36
45
45
22
24
28
44
16
ns
44
20
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 15 V, I
D
= 10 A
20
0.0070
0.0085
60
0.0085
0.0105
1.2
30
28
- 4.5
2.4
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62629
S12-1623-Rev. A, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS472ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10 V thru 4 V
48
I
D
- Drain Current (A)
I
D
- Drain Current (A)
64
80
36
V
GS
= 3 V
24
48
T
C
= 25
°C
32
12
16
T
C
= 125
°C
0
0.0
V
GS
= 2 V
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
0
0
1
T
C
= - 55
°C
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Output Characteristics
0.011
Transfer Characteristics
2100
C
iss
0.010
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1680
0.009
V
GS
= 4.5 V
0.008
1260
840
C
oss
0.007
V
GS
= 10 V
0.006
0
16
32
48
I
D
- Drain Current (A)
64
80
420
C
rss
0
5
10
15
20
25
30
0
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 10 V
4
V
DS
= 20 V
1.5
1.7
I
D
= 10 A
Capacitance
V
GS
= 10 V
1.3
V
GS
= 4.5 V
1.1
2
0.9
0
0
6
12
18
Q
g
- Total Gate Charge (nC)
24
30
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62629
S12-1623-Rev. A, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS472ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.040
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.032
I
D
= 10 A
1
T
J
= 150
°C
0.1
T
J
= 25 °C
0.024
0.016
T
J
= 125
°C
0.008
T
J
= 25
°C
0.01
0.001
0.0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
1.5
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
0.5
120
On-Resistance vs. Gate-to-Source Voltage
0.2
96
V
GS(th)
Variance (V)
I
D
= 5 mA
- 0.4
Power (W)
150
- 0.1
72
48
- 0.7
I
D
= 250 μA
24
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
I
D
- Drain Current (A)
10 I Limited
D
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
1s
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62629
S12-1623-Rev. A, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS472ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
40
I
D
- Drain Current (A)
30
20
Limited by Package
10
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
35
2.0
28
1.6
Power (W)
14
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
21
1.2
0.8
7
0.4
0
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62629
S12-1623-Rev. A, 09-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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