d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 64739
S10-1285-Rev. A, 31-May-10
www.vishay.com
1
SiS456DN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
=
0 V
0.8
20
10
10.5
9.5
T
C
= 25 °C
35
100
1.2
40
20
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1800
350
220
36
18.5
4.7
7.5
0.9
20
25
25
12
10
12
25
10
1.8
30
40
40
20
15
20
40
15
ns
Ω
55
28
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 20 A
V
GS
=
4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
40
0.0042
0.0055
75
0.0051
0.0068
1.0
30
27
- 5.5
2.2
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64739
S10-1285-Rev. A, 31-May-10
SiS456DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
20
16
60
12
T
C
= - 55 °C
8
T
C
= 25 °C
4
T
C
= 125 °C
40
V
GS
= 3 V
20
0
0.0
0.4
0.8
1.2
1.6
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.008
2400
Transfer Characteristics
0.007
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2000
C
iss
0.006
V
GS
= 4.5 V
0.005
V
GS
= 10 V
0.004
1600
1200
800
C
oss
0.003
400
C
rss
0.002
0
20
40
60
80
100
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.6
I
D
= 20 A
1.4
R
DS(on)
- On-Resistance
8
V
DS
= 15 V
6
V
DS
= 7.5 V
4
V
DS
= 24 V
2
V
GS
= 10 V; 4.5 V
(Normalized)
1.2
1.0
0.8
0
0
8
16
24
32
40
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64739
S10-1285-Rev. A, 31-May-10
www.vishay.com
3
SiS456DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.016
I
D
= 20 A
0.014
R
DS(on)
- On-Resistance (Ω)
0.012
0.010
0.008
0.006
0.004
0.002
T
J
= 25 °C
T
J
= 125 °C
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
10
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
50
On-Resistance vs. Gate-to-Source Voltage
1.8
40
I
D
= 250 μA
1.6
Power (W)
V
GS(th)
(V)
30
1.4
20
1.2
10
1.0
0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power (Junction-to-Ambient)
100 μs
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64739
S10-1285-Rev. A, 31-May-10
SiS456DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
60
80
I
D
- Drain Current (A)
50
40
Power (W)
100
125
150
60
30
40
Package Limited
20
20
10
0
0
25
50
75
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
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