d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
S14-0158-Rev. B, 03-Feb-14
Document Number: 63820
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA10DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage (transient)
c
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.8
31
19
14
17
34
140
1.2
62
40
-
-
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
0.3
-
-
-
-
-
-
-
-
2425
730
65
0.027
34
15.4
5.8
2.6
20
1.7
10
10
27
10
20
15
25
10
-
-
-
0.054
51
23.1
-
-
-
3.4
20
20
50
20
40
30
50
20
ns
nC
pF
V
DS
V
DSt
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D(aval)
= 20 A, t
transient
= 50 ns
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 10 A
30
36
-
-
1.1
-
-
-
25
-
-
-
-
-
17
-5
-
-
-
-
-
0.0028
0.0041
52
-
-
-
-
2.2
± 100
1
10
-
0.0037
0.0050
-
V
mV/°C
V
nA
μA
A
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. T
CASE
= 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0158-Rev. B, 03-Feb-14
Document Number: 63820
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA10DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
70
60
I
D
- Drain Current (A)
50
40
30
V
GS
= 3 V
20
4
10
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
I
D
- Drain Current (A)
12
T
C
= 25
°C
V
GS
= 10 V thru 4 V
16
20
Vishay Siliconix
8
T
C
= 125
°C
Output Characteristics
Transfer Characteristics
0.0050
3000
0.0045
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.0040
C - Capacitance (pF)
2400
C
iss
1800
0.0035
1200
C
oss
600
C
rss
0
0.0030
V
GS
= 10 V
0.0025
0.0020
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 7.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.6
I
D
= 10 A
1.4
V
GS
= 10 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
7
14
21
28
35
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S14-0158-Rev. B, 03-Feb-14
On-Resistance vs. Junction Temperature
Document Number: 63820
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA10DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
I
D
= 10 A
0.008
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
Vishay Siliconix
0.006
T
J
= 125
°C
0.004
T
J
= 25
°C
0.002
1
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.000
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.1
100
1.9
80
1.7
Power (W)
75
100
125
150
V
GS(th)
(V)
60
1.5
I
D
= 250 μA
1.3
40
1.1
20
0.9
- 50
- 25
0
25
50
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
10
100 μs
1 ms
10 ms
1
100 ms
T
A
= 25
°C
BVDSS Limited
1
s
10
s
DC
0.1
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
S14-0158-Rev. B, 03-Feb-14
Document Number: 63820
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA10DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
40
Vishay Siliconix
80
30
I
D
- Drain Current (A)
Package Limited
Power (W)
60
20
40
10
20
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0158-Rev. B, 03-Feb-14
Document Number: 63820
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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