d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
g. Package limited.
Document Number: 63780
S13-0828-Rev. B, 22-Apr-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA00DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t
p
= 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 10 A
0.7
70
70
31
39
T
C
= 25 °C
100
400
1.1
140
140
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.75
I
D
20 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 0.75
I
D
20 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
11 700
3320
360
0.031
147
66
26
8.6
89
1.35
18
14
67
11
43
43
54
15
2.7
35
28
130
22
85
85
100
30
ns
0.062
220
100
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= + 20, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
50
0.00083 0.00100
0.00110 0.00135
140
1.1
30
15
- 5.8
2.2
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63780
S13-0828-Rev. B, 22-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA00DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
V
GS
= 10 V thru 3 V
96
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
72
6
T
C
= 25
°C
4
48
24
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
2
T
C
= 125
°C
0
0.0
0.8
1.6
2.4
3.2
4.0
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
Output Characteristics
0.0015
13 000
Transfer Characteristics
C
iss
0.0013
R
DS(on)
- On-Resistance (Ω)
10 400
C - Capacitance (pF)
0.0011
V
GS
= 4.5 V
0.0009
V
GS
= 10 V
0.0007
7800
C
oss
5200
2600
C
rss
0.0005
0
16
32
48
I
D
- Drain Current (A)
64
80
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
I
D
= 20 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
Capacitance
1.7
I
D
= 20 A
V
GS
= 10 V
1.5
8
V
DS
= 15 V
6
1.3
4
V
DS
= 10 V
V
DS
= 20 V
1.1
V
GS
= 4.5 V
2
0.9
0
0
30
60
90
120
150
Q
g
- Total
Gate
Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63780
S13-0828-Rev. B, 22-Apr-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA00DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.005
I
D
= 20 A
10
I
S
-
Source
Current (A)
0.004
T
J
= 25 °C
1
0.003
0.1
0.002
T
J
= 125
°C
0.001
T
J
= 25
°C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
-
Source-to-Drain
Voltage (V)
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
125
150
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
10 ms
1
100 ms
Limited by R
DS(on)
*
1s
10 s
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63780
S13-0828-Rev. B, 22-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA00DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
270
216
I
D
- Drain Current (A)
162
Limited by Package
108
54
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
125
3.0
100
2.4
Power (W)
50
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
75
1.8
1.2
25
0.6
0
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63780
S13-0828-Rev. B, 22-Apr-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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