THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N04-3m3P
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 150 °C
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 10 A, dI/dt = 100 A/μs
I
F
= 10 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
-
-
-
-
-
-
0.5
-
-
-
-
5286
705
283
87
15.3
12.2
2.7
11
7
45
7
-
-
-
131
-
-
5.4
20
14
ns
68
14
nC
pF
I
D(on)
R
DS(on)
g
fs
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 22 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
40
1
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
0.0027
0.0034
169
-
V
2.5
± 250
1
50
250
-
0.0033
0.0041
-
S
A
μA
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Ratings and Characteristics
(T
C
= 25 °C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
-
-
-
-
-
-
-
-
0.72
42
2.5
52
90
A
160
1.2
63
3.8
78
V
ns
A
nC
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2462-Rev. B, 02-Dec-13
Document Number: 63397
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N04-3m3P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
160
V
GS
= 10 V thru 3 V
Vishay Siliconix
0.0040
R
DS(on)
- On-Resistance (Ω)
120
I
D
- Drain Current (A)
0.0035
V
GS
= 4.5 V
2V
80
0.0030
V
GS
= 10 V
40
0.0025
0
0.0020
0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
0
20
40
60
I
D
- Drain Current (A)
80
100
Output Characteristics
10
0.010
On-Resistance vs. Drain Current
8
R
DS(on)
- On-Resistance (Ω)
0.008
I
D
- Drain Current (A)
6
T
C
= 25 °C
0.006
T
J
= 150 °C
4
0.004
2
T
C
= 125 °C
T
C
= - 55 °C
0.002
T
J
= 25 °C
0
0
0
0.6
1.2
1.8
2.4
3.0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Transfer Characteristics
450
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 24 A
360
g
fs
- Transconductance (S)
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= 25 °C
8
V
DS
= 8 V
6
V
DS
= 15 V
4
V
DS
= 24 V
2
270
T
C
= - 55 °C
180
T
C
= 125 °C
90
0
0
16
32
48
64
80
0
0
15
30
45
60
75
90
I
D
- Drain Current (A)
Q
g
- Total
Gate
Charge
Transconductance
S13-2462-Rev. B, 02-Dec-13
Gate Charge
Document Number: 63397
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N04-3m3P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.2
Vishay Siliconix
1.7
I
S
-
Source
Current (A)
10
V
GS(th)
(V)
T
J
= 150 °C
T
J
= 25 °C
1.2
I
D
= 250 μA
1
0.7
0.1
0.0
0.3
0.6
0.9
1.2
0.2
- 50
- 25
V
SD
-
Source-to-Drain
Voltage (V)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Source-Drain Diode Forward Voltage
8000
50
I
D
= 250 μA
Threshold Voltage
6000
C - Capacitance (pF)
C
iss
V
DS
- Drain-to-Source Voltage (V)
48
46
4000
44
2000
C
oss
C
rss
42
0
0
10
20
30
40
40
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Capacitance
2.0
I
D
= 22 A
Drain Source Breakdown vs. Junction Temperature
160
V
GS
= 10 V
R
DS(on)
- On-Resistance (Normalized)
1.7
120
I
D
- Drain Current (A)
1.4
V
GS
= 4.5 V
Package Limited
80
1.1
40
0.8
0.5
- 50
0
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
S13-2462-Rev. B, 02-Dec-13
Current Derating
Document Number: 63397
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N04-3m3P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1000
Limited by R
DS(on)
*
Vishay Siliconix
100
I
D
- Drain Current (A)
100 μs
I
DAV
(A)
T
J
= 25 °C
10
10
T
J
= 150 °C
1
1 ms
10 ms
100 ms, 1
s
10
s,
DC
0.1
T
A
= 25 °C
Single
Pulse
BVDSS Limited
1
0.00001
0.0001
0.001
Time (s)
0.01
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?63397.
S13-2462-Rev. B, 02-Dec-13
Document Number: 63397
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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