SiR882ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
100
± 20
60
a
55
17.6
b, c
13.9
b, c
80
60
a
4.9
b, c
30
45
83
53
5.4
b, c
3.4
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
t
10 s
Maximum Junction-to-Ambient
b, f
°C/W
R
thJC
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63367
S11-1662-Rev. A, 15-Aug-11
www.vishay.com
1
Symbol
R
thJA
Typical
18
1
Maximum
23
1.5
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR882ADP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.74
49
54
24
25
T
C
= 25 °C
60
80
1.1
95
105
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.2
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1975
748
60
39.5
30.3
19.5
5.7
8.3
61
0.95
11
12
34
9
13
14
32
10
92
1.9
22
24
65
18
26
24
60
20
ns
60
45.5
29.5
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
30
0.0072
0.0077
0.0092
60
0.0087
0.0094
0.0115
S
1.2
100
67
- 5.8
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63367
S11-1662-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR882ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 4 V
64
I
D
- Drain Current (A)
8
10
I
D
- Drain Current (A)
48
6
T
C
= 25
°C
32
4
16
V
GS
= 3 V
V
GS
= 2 V
0.0
0.5
1.0
1.5
2.0
2.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.011
Transfer Characteristics
3100
0.010
R
DS(on)
- On-Resistance (Ω)
2480
C - Capacitance (pF)
V
GS
= 4.5 V
C
iss
1860
0.009
0.008
V
GS
= 7.5 V
1240
C
oss
620
0.007
V
GS
= 10 V
C
rss
0.006
0
16
32
48
64
80
I
D
- Drain Current (A)
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
I
D
= 20 A
8
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 50 V
2.0
I
D
= 20 A
1.7
V
GS
= 10 V
6
V
DS
= 25 V
4
V
DS
= 75 V
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0
9
18
27
36
45
Q
g
- Total Gate Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63367
S11-1662-Rev. A, 15-Aug-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR882ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.040
I
D
= 20 A
10
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
0.032
0.024
0.1
0.016
T
J
= 125
°C
0.01
0.008
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
V
GS(th)
- Variance (V)
I
D
= 5 mA
- 0.4
Power (W)
- 0.1
120
80
- 0.7
I
D
= 250 μA
40
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1s
T
C
= 25
°C
Single Pulse
10 s
BVDSS Limited
DC
0.1
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63367
S11-1662-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR882ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
64
I
D
- Drain Current (A)
Package Limited
48
32
16
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
Power (W)
40
Power (W)
60
1.5
1.0
20
0.5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63367
S11-1662-Rev. A, 15-Aug-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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