d. Maximum under steady state conditions is 85 °C/W.
Document Number: 62662
S12-1136-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4056DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4 A
0.77
34
34
20
14
T
C
= 25 °C
5.1
70
1.1
65
65
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.2
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
900
340
31
19.6
9.7
2.8
4.3
26.2
0.85
13
14
19
10
11
10
20
9
40
1.7
26
28
38
20
22
20
40
18
ns
29.5
15
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 15 A
V
GS
½7.5
V, I
D
= 12 A
V
GS
½4.5
V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
30
0.017
0.018
0.022
26
0.023
0.024
0.031
S
1.5
100
67
-5
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62662
S12-1136-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4056DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 5 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
42
V
GS
= 4 V
28
30
T
C
= 25
°C
20
14
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
10
T
C
= 125
°C
0
0.0
1.5
3.0
T
C
= - 55
°C
4.5
6.0
7.5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
Transfer Characteristics
1500
0.04
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1200
C
iss
900
C
oss
600
0.03
V
GS
= 4.5 V
V
GS
= 7.5 V
V
GS
= 10 V
0.02
0.01
300
C
rss
0.00
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
2.1
I
D
= 15 A
V
DS
= 50 V
1.8
V
GS
= 10 V
8
6
V
DS
= 25 V
4
V
DS
= 75 V
1.5
V
GS
= 4.5 V
1.2
2
0.9
0
0.0
4.4
8.8
13.2
17.6
Q
g
- Total Gate Charge (nC)
22
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62662
S12-1136-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4056DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= 15 A
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
T
J
= 25 °C
0.12
1
0.09
0.1
0.06
T
J
= 125
°C
0.01
0.03
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
150
V
GS(th)
(V)
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
1s
T
A
= 25 °C
Single Pulse
10 s
BVDSS Limited
DC
100
0.1
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62662
S12-1136-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4056DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
12
I
D
- Drain Current (A)
9
6
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
7.0
2.0
5.6
1.6
Power (W)
2.8
Power (W)
4.2
1.2
0.8
1.4
0.4
0.0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62662
S12-1136-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
中国 北京—— Analog Devices, Inc. （纽约证券交易所代码 : ADI ），全球领先的高性能信号处理解决方案供应商，最新推出两款模拟输出驱动器—— AD5750 和 AD5751 ，能显著提高过程控制应用的效率和可靠性，包括那些在高恒流电压和高温条件下工作的过程控制应用。这两款器件基于 ADI 公司的 iCMOS ™工业工艺技术，输出驱动器的精度...[详细]
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
