NLA16T245
16-Bit (Dual 8-Bit)
Configurable Dual-Supply
Translating Transceiver
with 3-State Outputs
The NLA16T245 is a 16−bit (dual 8−bit) configurable dual−supply
translating bidirectional transceiver with 3−state outputs. The A− and
B−ports are designed to track two different power supply rails, V
CCA
and V
CCB
respectively. Both supply rails are configurable from 0.9 V
to 4.5 V allowing universal bidirectional voltage translation between
the A− and B−ports.
The Direction inputs, 1DIR and 2DIR, determine the direction of
data flow. 1DIR and 2DIR are independent of each other. When 1DIR
or 2DIR is High, data flows from 1An to 1Bn or 2An to 2Bn
respectively. When 1DIR or 2DIR is Low, data flows from 1Bn to 1An
or 2Bn to 2An respectively. The Output Enable inputs, and , when
High, disables both A− and B−ports by putting them in 3−state. The
1DIR, 2DIR, and signals are all designed to track V
CCA
.
Features
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1
TSSOP−48
DT SUFFIX
CASE1201
MARKING DIAGRAM
NLA16T245G
AWLYYWW
1
XXXXX
A
WL
YY
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
•
Wide V
CCA
and V
CCB
Operating Range: 0.9 V to 4.5 V
•
Output Noise Reduction through Dynamic Output Impedance
•
•
•
•
•
•
•
•
•
Change
Drive Capability:
±12
mA @ 3.0 V V
CC
Input/Output Pins OVT to 5.5 V
Control Inputs Track V
CCA
Non−preferential V
CC
Sequencing
Outputs at 3−State until Active V
CC
is reached
Power−Off Protection
Outputs Switch to 3−State with either V
CC
at GND
Pb−Free Packaging: TSSOP−48
This is a Pb−Free Device
ORDERING INFORMATION
Device
NLA16T245DTR2G
Package
TSSOP−48
(Pb−Free)
Shipping
†
2500 / Tape &
Reel
Typical Applications
•
Mobile Phones, PDAs, Other Portable Devices
Important Information
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
•
ESD Protection for All Pins:
Human Body Model (HBM) > 2000 V
Machine Model (MM) > 200 V
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 0
1
Publication Order Number:
NLA16T245/D
NLA16T245
MAXIMUM RATINGS
Symbol
V
CCA
, V
CCB
V
I
DC Supply Voltage
Input Voltage
nOE, nDIR, nA
Parameter
Value
−0.5
to +5.5
−0.5
to +4.6
−0.5
to +5.5
nB
−0.5
to +4.6
−0.5
to +5.5
V
O
Output Voltage
(Power−Off Mode) nA, nB
(3−State Mode) nA, nB
(Active Mode
−
High or Low State) nA
(Active Mode
−
High or Low State) nB
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature
nOE, nDIR
−0.5
to +5.5
−0.5
to +5.5
−0.5
to V
CCA
+ 0.5
−0.5
to V
CCB
+ 0.5
−50
−50
±50
±100
±100
−65
to +125
V
I
< GND
V
O
< GND
mA
mA
mA
mA
mA
°C
V
CCA
= 0 V
V
CCA
≥
0.9 V
V
CCB
= 0 V
V
CCB
≥
0.9 V
V
CCA
or V
CCB
= 0
V
CCA
, V
CCB
≥
0.9 V
V
CCA
, V
CCB
≥
0.9 V
V
Condition
Unit
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CCA
, V
CCB
V
I
V
O
Positive DC Supply Voltage
Input Voltage
Output Voltage
(Power Down) nA, nB
(3−State Mode) nA, nB
(Active Mode
−
High or Low State) nA
(Active Mode
−
High or Low State) nB
T
A
Dt/DV
Operating Temperature Range
Input Transition Rise or Rate
V
I
, V
IO
from 30% to 70% of V
CC
; V
CC
=3.3 V
±
0.3 V
Parameter
Min
0.9
GND
GND
GND
GND
GND
−55
0
Max
4.5
4.5
4.5
4.5
V
CCA
V
CCB
+115
10
°C
nS
Unit
V
V
V
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3
NLA16T245
DC ELECTRICAL CHARACTERISTICS
(continued)
−555C
to +1155C
Symbol
Parameter
Test Conditions
I
OH
=
−100
mA;
V
I
= V
IH
I
OH
=
−0.5
mA; V
I
= V
IH
I
OH
=
−2
mA; V
I
= V
IH
V
OH
Output HIGH Voltage
I
OH
=
−4
mA; V
I
= V
IH
I
OH
=
−8
mA; V
I
= V
IH
I
OH
=
−12
mA; V
I
= V
IH
I
OH
=
−12
mA; V
I
= V
IH
I
OL
= 100
mA;
V
I
= V
IL
I
OL
= 0.5 mA; V
I
= V
IL
I
OL
= 2 mA; V
I
= V
IL
V
OL
Output LOW Voltage
I
OL
= 4 mA; V
I
= V
IL
I
OL
= 8 mA; V
I
= V
IL
I
OL
= 12 mA; V
I
= V
IL
I
OL
= 12 mA; V
I
= V
IL
I
I
I
OFF
Input Leakage Current
Power−Off Leakage
Current
V
I
= V
CCA
or GND
V
I
or V
O
= 0 to 4.5 V,
V
I
= V
IH
or V
IL
, V
O
= V
CCO
or GND, nOE = V
IH
V
I
= V
IH
or V
IL
, V
O
= V
CCO
or GND, nOE = don’t care
nOE
nA
nB
nA, nB
nA
nB
V
CCA
(V)
0.9
−
4.5
0.9
1.4
1.65
2.3
3.0
4.5
0.9
−
4.5
0.9
1.4
1.65
2.3
3.0
4.5
0.9
−
4.5
0
0
−
4.5
3.6
3.6
0
0.9
1.6
1.95
2.7
I
CCA
Quiescent Supply
Current
V
I
= V
CCI
or GND; I
O
= 0
0
3.6
3.6
0
4.5
4.5
0.9
1.6
1.95
2.7
I
CCB
Quiescent Supply
Current
V
I
= V
CCI
or GND; I
O
= 0
0
3.6
3.6
0
4.5
4.5
NOTE:
V
CCB
(V)
0.9
−
4.5
0.9
1.4
1.65
2.3
3.0
4.5
0.9
−
4.5
0.9
1.4
1.65
2.3
3.0
4.5
0.9
−
4.5
0
−
4.5
0
3.6
0
3.6
0.9
1.6
1.95
2.7
3.6
0
3.6
4.5
0
4.5
0.9
1.6
1.95
2.7
3.6
0
3.6
4.5
0
4.5
Min
V
CCO
−
0.2
0.75 * V
CCO
1.05
1.2
1.75
2.3
4.0
0.2
0.25 * V
CCO
0.35
0.45
0.55
0.7
0.75
±2.5
±10.0
±10.0
±12.5
±12.5
±12.5
20
20
20
30
−40
40
40
−40
40
40
20
20
20
30
−40
40
40
−40
40
40
mA
mA
mA
mA
mA
V
V
Max
Unit
I
OZ(3)
3−State Output
Leakage Current
Connect ground before applying supply voltage V
CCA
or V
CCB
. This device is designed with the feature that the power−up
sequence of V
CCA
and V
CCB
will not damage the IC.
3. V
CCI
is the V
CC
associated with the input port.
4. V
CCO
is the V
CC
associated with the output port.
5. For I/O ports, the parameter IOZ includes the input leakage current.
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5
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