NCP6868
Product Preview
2.5 A Boost Regulator
with Bypass Function
The NCP6868 is a synchronous boost converter. It is designed
primarily to boost new generation low-voltage Li-Ion batteries (silicon
anode-like) embedded into cell and smart phones. The objective is to
guarantee a minimum output voltage even in the case for which the
battery voltage is below the minimum voltage required by the system.
The device features a Bypass mode coupled with a Boost mode. It is
capable to drive a continuous load up to 2.5 A and it operates at
a switching frequency of 2.5 MHz. An I
2
C serial control can also be
enabled for configuring the output voltage and peak current limit. The
NCP6868 is available in a space saving, low profile 1.8
×
1.8 mm
CSP-16 package.
Features
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WLCSP16
CASE 567JU
MARKING DIAGRAM
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2.35 V to 5.5 V Input Voltage
Fixed or Programmable V
OUT
: from 2.85 V Up to 5.3 V
Bypass Operation when V
IN
is Above or Close to V
OUT
Few External Components & 0.47
mH
Inductor
High Efficiency Up to 98%
Output Current Up to 2.5 A Continuous
(V
IN
= 2.6 V, V
OUT
= 3.5 V) and up to 4 A Peak Current
Inductor Peak Current up to 9.0 A
Forced Bypass Option through BP Pin
Low Quiescent Current: 50
mA
Voltage Control Pin (VSEL) to Precisely Adjust V
OUT
I
2
C Serial Control as a Software-Mode Option to Program Output
Voltage and Peak Current Limit
Soft-Start Function (SS) to Limit Inrush Current
Current Limitation to Protect Against Short Circuit
Thermal Limit Protection
Small 1.8
×
1.8 mm / 0.4 mm Pitch CSP Package
These Devices are Pb−Free and are RoHS Compliant
6868x
ALYYWW
G
6868x = Specific Device Code
x = P: NCP6868P
B: NCP6868V315
C: NCP6868V330
E: NCP6868E315
A
= Assembly Location
L
= Wafer Lot
YY
= Year
WW = Work Week
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 27 of
this data sheet.
Typical Applications
•
Boost Converters for New Generation Low-Voltage Li-Ion
Batteries
•
USB OTG (On-The-Go)
•
3G/4G – LTE RF PA
•
Cell Phones, Smart Phones, Phablets, Tablets & Webtablets
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2015
1
August, 2015 − Rev. P4
Publication Order Number:
NCP6868/D
NCP6868
TYPICAL APPLICATION
Figure 1. Application Block Diagram
PIN OUT
1.80 mm
A1
EN
B1
VSEL
C1
BP
D1
AGND
A2
PG
B2
NC/SCL
C2
NC/SDA
D2
PGND
A3
PVIN
B3
VOUT
C3
SW
D3
PGND
A4
PVIN
B4
VOUT
C4
SW
D4
PGND
1.80 mm
Figure 2. Pin Out (Top View)
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NCP6868
Table 1. PIN FUNCTION DESCRIPTION
Pin
A1
A2
Name
EN
PG
Type
Input
Input/Output
Description
Enable Control. Active high will enable the part. There is an internal pull down
resistor on this pin.
Interrupt Output pin active Low (Open drain); PG is pulled low if a PG event is
detected that is output out of regulation, over-voltage, overload, UVLO or TWRN
protection is activated. PG is pulled-up High when EN is Low.
DCDC input power connected to a Li-Ion battery. This pin must be decoupled to
ground by a 10
mF
and 1
mF
ceramic capacitors. These capacitors should be placed
as close as possible to this pin.
Output Voltage Select. This pin can be used to select the voltage when the device
operates in boost mode. VSEL = Low, Low voltage target selected; VSEL = High,
High voltage target selected. There is an internal pull-down resistor on this pin.
MODE: B2 pin is configured as a MODE pin when the I
2
C interface is disabled and
the device output voltage is fixed. When MODE = Low the device is operating in auto
mode. This pin must be set Low during device start-up. When MODE = High the
device is operating in forced CCM mode.
SCL: I
2
C interface Clock line when the I
2
C interface is enabled. There is an internal
pull down resistor on this pin.
NC: For device without I
2
C interface activated, connect this pin to AGND.
SDA: Bidirectional data line of the I
2
C bus.
Analog Ground. Analog and digital circuit blocks’ ground. This pin must be connected
to the system ground.
Output voltage. Connect output capacitors as close as possible to the device.
Bypass pin. Active Low. This pin is used to force the device into the bypass mode.
In forced Bypass mode, both Bypass P-MOSFET and P-Channel MOSFET (see
Figure 1) are turned ON and N-Channel MOSFET (see Figure 1) is turned OFF.
There is an internal pull-up resistor on this pin.
DC-DC Switch Power pin. This pin connects the power transistors to one end of the
inductor. Typical application (2.5 MHz) uses a 0.470
mH
inductor; refer to application
section for more information.
Power Ground. This pin is the power ground and carries the high switching current.
High quality ground must be provided to prevent noise spikes.
To avoid high-density current flow in a limited PCB track, a local ground plane that
connects all PGND pins together is recommended. Analog and power grounds
should only be connected together in one location through a printed trace.
A3−A4
P
VIN
Power Input
B1
VSEL
Input
B2
MODE/SCL
Input
C2
D1
B3−B4
C1
NC/SDA
AGND
V
OUT
BP
Ground or
Input/Output
Ground
Power Output
Input
C3−C4
SW
Power
D2−D4
PGND
Ground
Table 2. MODES OF OPERATION
EN
0
1
1
BP
X
0
1
Device State
All bias circuits are off and the device is in shutdown mode. During shutdown, current flow is
prevented from P
VIN
to V
OUT
and from SW to V
OUT
.
The device is active and forced in bypass mode. A short circuit protection is embedded in order to
prevent the output voltage going to low.
The device will switch between Boost mode and Bypass mode automatically.
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NCP6868
Table 3. MAXIMUM RATINGS
Rating
Analog and Power Pins: P
VIN
, SW
V
OUT
Pin
Digital pins: EN, VSEL, BP, MODE/SCL, SDA, PG:
Input Voltage
Input Current
Operating Ambient Temperature Range
Operating Junction Temperature Range (Note 1)
Storage Temperature Range
Maximum Junction Temperature
Thermal Resistance Junction-to-Ambient (Note 2)
ESD, Electrostatic Discharge Protection,
Human Body Model (Note 3)
Charged Device Model
Latch Up Current: (Note 4)
Digital Pins
All Other Pins
Moisture Sensitivity (Note 5)
Symbol
V
A
V
OUT
V
DG
I
DG
T
A
T
J
T
STG
T
JMAX
R
ΘJA
HBM
CDM
I
LU
10
100
MSL
Level 1
Value
−0.3 to +6.0
−0.3 to +6.0
−0.3 to V
A
+ 0.3
≤
6.0
10
−40 to +85
−40 to +125
−65 to + 150
−40 to +150
78
2
1
mA
Unit
V
V
V
mA
°C
°C
°C
°C
°C/W
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The thermal shutdown set to 150°C (typical) avoids potential irreversible damage on the device due to power dissipation.
2. The Junction-to-Ambient and Junction-to-Board thermal resistances are a function of Printed Circuit Board (PCB) layout and application.
These data are measured using 4-layer PCBs (2s2p). For a given ambient temperature T
A
it has to be pay attention to not exceed the max
junction temperature T
JMAX
.
3. This device series contains ESD protection and passes the following ratings:
Human Body Model (HBM)
±2.0
kV per JEDEC standard: JESD22−A114.
Machine Model (MM)
±150
V per JEDEC standard: JESD22−A115.
4. Latch up current per JEDEC standard: JESD78 class II.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
Table 4. RECOMMENDED OPERATING CONDITIONS
Symbol
P
VIN
V
OUT
V
OUT
Parameter
Power Supply (Note 6)
V
OUT
Range
Fixed Output Voltage for Standard Versions
Other Output Voltages in the Range 3 V to
5.3 V are Available by Request.
NCP6868V315
VSEL LOW
VSEL HIGH
NCP6868V330
VSEL LOW
VSEL HIGH
NCP6868E315
VSEL LOW
VSEL HIGH
NCP6868P
VSEL LOW
VSEL HIGH
I
OUT
I
LoadStartMax
L
C
o
C
in
Continuous Output Current
Maximum Load Current during Start-up
Inductor for DCDC Converter (Note 7)
Output Capacitor for DCDC Converter (Note 7)
Input Capacitor for DCDC Converter (Note 7)
For V
OUT
≤
3.5 V and P
VIN
≥
2.5 V
Conditions
Min
2.35
2.85
−
−
−
−
−
−
−
−
0
500
−
15
3.3
0.47
20
4.7
−
56
−
Typ
−
−
3.15
3.35
3.30
3.50
3.15
3.60
P*
P*
−
Max
5.5
5.3
−
−
−
−
−
−
−
−
2.5
Unit
V
V
V
V
V
V
V
V
V
V
A
mA
mH
mF
mF
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
* P = Programmable.
6. Operation above 5.5 V input voltage for extended period may affect device reliability.
7. Including de-ratings (refer to application information section of this document for further details)
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NCP6868
ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
J
up to +125°C unless otherwise specified. P
VIN
= 2.35 V to V
OUT
(Unless otherwise noted). Typical values
are referenced to P
VIN
= 3.0 V, T
A
= +25°C and default configuration (Figure 1) (Note 8)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY CURRENT: PIN P
VIN
I
QBP
I
QBoost
I
SD
I
QBPForced
Operating Quiescent Current,
Bypass Mode (Auto)
Operating Quiescent Current,
Boost Mode
Shutdown Current
Forced Bypass Mode
V
OUT
= 3.5 V, P
VIN
= 3.7 V
V
OUT
= 3.5 V, P
VIN
= 3.2 V
EN = Low, P
VIN
= 3.0 V
V
OUT
= 3.5 V, P
VIN
= 3.5 V
V
OUT
= 3.5 V, P
VIN
= 3.5 V
DCDC CONVERTER
P
VIN
V
OUT_ACC
I
OUTMAX
P
VINmin2.5A
Input Voltage Range
Output Voltage Accuracy
Boost Mode
Minimum P
VIN
for 2.5 A load
Referred to GND, DC,
V
OUT
– P
VIN
> 100 mV
For V
OUT
≤
3.5 V and P
VIN
≥
2.5 V
V
OUT
= 3.5 V, T
j
< 120°C
V
OUT
= 3.15 V, T
j
< 120°C
P
VINmin2A
Minimum P
VIN
for 2A load
V
OUT
= 5.0 V, T
j
< 120°C
V
OUT
= 4.5 V, T
j
< 120°C
I
LKout-in
I
LKout
F
SW
R
ONPMOS
V
OUT
to P
VIN
Reverse Leakage
Current
V
OUT
Leakage Current
Switching Frequency
P-Channel MOSFET On
Resistance (Synchronous
Rectifier)
N-Channel MOSFET On
Resistance
(Boost Switch)
Bypass P-MOSFET On
Resistance
Load Transient Response
Boost Peak Current Limit
Boost Peak Current Limit at
Soft-Start
Soft-Start Input Peak Current
Limit
Soft-Start EN High to
Regulation
50
W
Load, C
OUT
= 2 x 10
mF
V
OUT
= 5 V, EN = Low
V
OUT
= 0 V, EN = Low, P
VIN
= 4.2 V
P
VIN
= 3.0 V, V
OUT
= 3.35 V, I
OUT
= 1 A
From SW to V
OUT
, V
OUT
= 3.5 V, P
VIN
= 3.5 V
2.35
−2
−
−
−
−
−
−
−
2
−
−
−
−
2.5
2.35
3.0
2.8
0.2
0.1
2.5
30
5.5
4
2.5
−
−
−
−
1
1
3
60
V
%
A
V
V
V
V
mA
mA
MHz
mW
Low IQ
OCP ON
−
−
−
−
−
30
55
1
3
25
50
70
5
8
40
mA
mA
mA
mA
mA
R
ONNMOS
From SW to PGND, V
OUT
= 3.5 V,
P
VIN
= 3.5 V
From P
VIN
to V
OUT
, V
OUT
= 3.5 V,
P
VIN
= 3.5 V
P
VIN
= 3.0 V, V
OUT
= 3.5 V,
I
OUT
= 500 to 1500 mA, T
R
= T
F
= 0.1
ms
P
VIN
= 2.6 V
P
VIN
= 2.6 V
−
25
50
mW
R
ONBP
LOAD
TR
I
PKlim
I
SS_PKlim
ISS
PK
Tss
−
−
−
−
−
−
35
±4
5.0
2.0
1600
400
60
−
9.0
−
−
500
mW
%
A
A
mA
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by characterization and design.
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