NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
•
•
•
•
•
•
•
•
•
Integrated Schottky Diode
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
Parameter
Symbol
V
DSS
V
GS
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
Steady
State
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
I
D
Value
30
±20
22
15.9
2.69
32.4
23.4
5.85
16.3
11.7
1.47
64
46
22.73
192
−55
to
+150
32
6.0
52
W
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
http://onsemi.com
V
(BR)DSS
30 V
R
DS(on)
MAX
3.5 mW @ 10 V
5.2 mW @ 4.5 V
I
D
MAX
64 A
Applications
N−Channel MOSFET
D
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
G
S
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4965
A
Y
WW
G
S
S
S
G
4965
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4965NFTAG
NTTFS4965NFTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape &
Reel
5000 / Tape &
Reel
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 32 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm
2
.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 0
1
Publication Order Number:
NTTFS4965NF/D
NTTFS4965NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm
2
.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
5.5
46.4
84.8
21.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A
I
D
= 10 A
V
GS
= V
DS
, I
D
= 250
mA
1.2
1.6
5.2
2.8
2.8
4.16
4.13
34
S
5.2
3.5
2.3
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
30
15
500
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 1.5 V, I
D
= 10 A
2075
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
876
46
13.6
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
2.0
5.8
4.1
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A
29.4
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
11
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
24
20
5.4
8.5
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
24
25
4.0
ns
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTTFS4965NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 2 A
V
GS
= 0 V,
I
S
= 2 A
T
J
= 25°C
T
J
= 125°C
0.4
0.33
35.7
18.2
17.5
32
nC
ns
0.7
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.65
0.20
1.5
1.0
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTTFS4965NF
TYPICAL PERFORMANCE CURVES
110
3.6 V
I
D
, DRAIN CURRENT (A)
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
0
1
2
3
4
5
100
90
80
70
60
50
40
30
20
10
0
1
1.5
2
2.5
3
3.5
4
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
V
DS
= 5 V
150
135
I
D
, DRAIN CURRENT (A)
120
105
90
75
60
45
30
15
0
4.0 V
4.2 V
V
GS
= 3.8 V
4.4 V to 4.5 V
7.5 V to 10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.50E−03
5.25E−03
5.00E−03
4.75E−03
4.50E−03
4.25E−03
4.00E−03
3.75E−03
3.50E−03
3.25E−03
3.00E−03
2.75E−03
2.50E−03
2.25E−03
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
0.005
0
V
GS
= 10 V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
5
20
35
50
65
80
95
110 125 140 155
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
1.00E−05
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (A)
1.00E−02
1.00E−01
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
1.00E−03
1.00E−04
T
J
= 25°C
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTTFS4965NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
V
GS
= 0 V
T
J
= 25°C
C
iss
10
8
6
4
2
0
Q
gs
Q
gd
Q
T
C, CAPACITANCE (pF)
C
oss
C
rss
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
30
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
0
2
4
6 8 10 12 14 16 18 20 22 24 26 28 30
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 10 A
V
GS
= 10 V
t, TIME (ns)
100
10
9
t
d(off)
t
f
t
r
10
t
d(on)
8
7
6
5
4
3
2
1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
100
10
1
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
V
GS
= 20 V
Single Pulse
T
C
= 25°C
55
50
45
40
35
30
25
20
15
10
5
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 32 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
dc
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
