NTMFS4965NF
Power MOSFET
Features
30 V, 65 A, Single N−Channel, SO−8 FL
•
•
•
•
•
•
•
•
•
Integrated Schottky Diode
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
23.9
17.2
3.04
36
26
7.0
17.5
12.6
1.63
65
47
22.73
195
100
−55
to
+150
64
6
54
W
A
A
°C
A
V/ns
mJ
W
A
W
A
1
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V
(BR)DSS
30 V
R
DS(ON)
MAX
3.4 mW @ 10 V
5.0 mW @ 4.5 V
I
D
MAX
65 A
Applications
N−CHANNEL MOSFET
D
Unit
V
V
A
G
(4)
S
W
A
S
S
S
G
(1, 2, 3)
(5, 6)
MARKING
DIAGRAM
D
D
4965NF
AYWZZ
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4965NF
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4965NFT1G
NTMFS4965NFT3G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, I
L
= 33 A
pk
,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 0
1
Publication Order Number:
NTMFS4965NF/D
NTMFS4965NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient
−
t
v
10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
5.5
41.15
76.9
17.86
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 1.0 mA
I
D
= 10 mA, referenced to 25°C
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11
32
21
6.0
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
2100
900
60
14.2
1.8
5.9
4.2
30.5
nC
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 15 A
1.2
1.6
5.0
2.7
2.7
4.0
4.0
43
S
5.0
3.4
mW
2.3
V
mV/°C
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 1.0 mA
I
D
= 10 mA, referenced to 25°C
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
30
15
500
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4965NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 2 A
V
GS
= 0 V,
I
S
= 2 A
T
J
= 25°C
T
J
= 125°C
0.4
0.33
36.5
18
18.5
32
nC
ns
0.7
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.5
26.5
26
4.5
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.65
0.20
1.5
1.0
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4965NF
TYPICAL PERFORMANCE CURVES
110
V
GS
= 3.8 V
3.6 V
3.4 V
3.2 V
7.5 V to 10 V
3.0 V
2.8 V
2.6 V
2.4 V
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
I
D
, DRAIN CURRENT (A)
100
90
80
70
60
50
40
30
20
10
0
1
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
1.5
2
2.5
3
3.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4
V
DS
= 5 V
150
135
I
D
, DRAIN CURRENT (A)
120
105
90
75
60
45
30
15
0
4.0 V
4.2 V
4.4 V to 4.5 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
0
2.0
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.25E−03
5.00E−03
4.75E−03
V
GS
= 4.5 V
T
J
= 25°C
4.50E−03
4.25E−03
4.00E−03
3.75E−03
3.50E−03
3.25E−03
3.00E−03
2.75E−03
2.50E−03
2.25E−03
5
20
35
V
GS
= 10 V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
50
65
80
95
110 125 140 155
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
1.00E−01
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (A)
1.00E−02
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
1.00E−03
1.00E−04
T
J
= 25°C
50
25
0
25
50
75
100
125
150
1.00E−05
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4965NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
iss
V
GS
= 0 V
T
J
= 25°C
10
8
6
4
2
0
Q
gs
Q
gd
Q
T
C
oss
C
rss
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
0
4
8
12
16
20
24
28
32
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10.0
1000
V
DD
= 15 V
I
D
= 10 A
V
GS
= 10 V
t, TIME (ns)
100
9.0
t
d(off)
t
f
t
r
I
S
, SOURCE CURRENT (A)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0
V
GS
= 0 V
T
J
= 25°C
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
100
10
1
0.1
0.01
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V
GS
= 20 V
Single Pulse
T
C
= 25°C
10
ms
100
ms
1 ms
10 ms
Figure 10. Diode Forward Voltage vs. Current
60
55
50
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 33 A
I
D
, DRAIN CURRENT (A)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
dc
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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