VS-FC220SA20
www.vishay.com
Vishay Semiconductors
SOT-227 Power Module
Single Switch - Power MOSFET, 220 A
FEATURES
• Enhanced body diode dV/dt and dI
F
/dt capability
• Improved gate avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche SOA
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Simple drive requirements
• UL approved file E78996
SOT-227
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• High efficiency synchronous rectification SMPS
• Uninterruptible power supply
PRODUCT SUMMARY
V
DSS
R
DS(on)
I
D
Type
Package
200 V
4.80 m
220 A
Modules - MOSFET
SOT-227
• High speed power switching
• Hard switched and high frequency circuits
DESCRIPTION
This Generation of Power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 400 W to 700 W. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
MAJOR RATINGS AND CHARACTERISTICS - MOSFET
PARAMETER
Drain to source voltage
Continuous drain current at V
GS
10 V
Pulsed drain current
Power dissipation
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
SYMBOL
V
DSS
I
D (1)
I
DM (2)
P
D
V
GS
E
AS (3)
I
AR (4)
E
AR (4)
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
200
220
158
350
789
395
± 30
1200
70
600
W
V
mJ
A
mJ
A
UNITS
V
Notes
(1)
Maximum continuous drain current at V
GS
10 V must be limited to 100 A to do not exceed the maximum temperature of power terminals.
(2)
Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C.
J
(3)
Limited by T max., starting T = 25 °C, L = 0.23 mH, R = 25
,
I
= 102 A, V
GS
= 10 V. Part not recommended for use above this value.
J
J
g
AS
(4)
Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C, L = 0.23 mH, R = 25
,
V
J
g
GS
= 10 V, duty cycle 1 %.
Revision: 14-Aug-13
Document Number: 94846
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FC220SA20
www.vishay.com
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS - MODULE
PARAMETER
Operating junction temperature range
Operating storage temperature range
Insulation withstand voltage (AC-RMS)
SYMBOL
T
J
T
Stg
V
ISOL
TEST CONDITIONS
MAX.
- 55 to + 175
- 55 to + 175
2.5
UNITS
°C
kV
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
Mounting torque
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
- 55
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
175
0.19
-
-
1.3
UNITS
°C
°C/W
g
Nm
SOT-227
ELECTRICAL CHARACTERISTCS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Gate resistance, internal
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain to case capacitance
SYMBOL
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on) (1)
V
GS(th)
g
fs
R
g
V
DS
= 200 V, V
GS
= 0 V
I
DSS
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 °C
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
d-cs
V
GS
= 20 V
V
GS
= - 20 V
I
D
= 150 A
V
DS
= 100 V
V
GS
= 10 V
see fig.15 and fig.19
(1)
V
DD
= 120 V
I
D
= 150 A
R
g
= 5
L = 500 μH
Diode used: 20CZU02
V
DD
= 120 V
I
D
= 150 A
R
g
= 5
L = 500 μH
T
J
= 125 °C
Diode used: 20CZU02
Between lead, and center of die contact
V
GS
= 0 V
V
DS
= 50 V
f = 1.0 MHz
see fig.14
V
GS
= 0 V, (G-S shortened); F = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 1.0 mA
Reference to 25 °C, I
D
= 1.0 mA
V
GS
= 10 V, I
D
= 150 A
V
DS
= V
GS
, I
D
= 500 μA
V
DS
= V
GS
, I
D
= 500 μA, T
J
= 125 °C
V
DS
= 20 V, I
D
= 150 A
MIN.
200
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.21
4.8
4
2.5
385
2
1
40
2
-
-
350
120
110
360
245
205
220
350
243
210
175
5
21 000
1600
320
43
MAX.
-
-
7.0
5.1
-
-
-
50
1000
10
250
- 250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
nH
ns
ns
nC
UNITS
V
V/°C
m
V
S
μA
mA
nA
Revision: 14-Aug-13
Document Number: 94846
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FC220SA20
www.vishay.com
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Continuous source current (body diode)
Pulsed source current (body diode)
SYMBOL
I
S
I
SM (1)
V
SD (2)
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
t
on
T
J
= 125 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs,
V
R
= 100 V
(2)
TEST CONDITIONS
MOSFET symbol showing the integral
reverse p-n junction diode
T
J
= 25 °C, I
S
= 150 A, V
GS
= 0 V
Diode forward voltage
T
J
= 125 °C, I
S
= 150 A, V
GS
= 0 V
T
J
= 175 °C, I
S
= 150 A, V
GS
= 0 V
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Forward turn-on time
T
J
= 25 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs,
V
R
= 100 V
(2)
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
0.87
0.75
0.70
170
12
1060
200
15
1550
MAX.
220
600
1.0
-
-
-
-
-
-
-
-
ns
A
nC
ns
A
nC
V
UNITS
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig.18)
(2)
Pulse width
300 μs, duty cycle
2 %
180
300
275
250
225
200
175
150
125
100
75
50
25
0
0
50
100
150
200
250
0
0.5
1
1.5
2
V
GS
= 6 V
V
GS
= 15 V
V
GS
= 12 V
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 7 V
160
140
120
100
80
60
40
20
0
DC
I
DS
-Drain-to-Source to Current (A)
Allowable Case Temperature (°C)
I
DS
- Continuous Drain-Source Current (A)
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
V
DS
- Drain-to-Source Voltage (V)
Fig. 3 - Typical Drain-to-Source Current Output Characteristics,
at T
J
= 25 °C
300
I
DS
- Drain-to-Source current (A)
T
J
= 125 °C
100
I
DS
-Drain-to-Source to Current (A)
275
250
225
200
175
150
125
100
75
50
25
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
= 6 V
V
GS
= 15 V
V
GS
= 12 V
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 7 V
T
J
= 25 °C
10
T
J
= 175 °C
1
0.1
0.01
0.10
1.00
10.00
V
DS
- Drain-to-Source Voltage (V), at V
GS
= 10 V
Fig. 2 - Typical Drain-to-Source Current Output Characteristics,
V
GS
= 10 V
Revision: 14-Aug-13
V
DS
- Drain-to-Source Voltage (V)
Fig. 4 - Typical Drain-to-Source Current Output Characteristics,
at T
J
= 125 °C
Document Number: 94846
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FC220SA20
www.vishay.com
300
200
Vishay Semiconductors
I
D
- Drain-to-Source Current (A)
180
160
140
120
100
80
60
40
20
0
T
J
= 175 °C
T
J
= 125 °C
I
DS
-Drain-to-Source to Current (A)
275
250
225
200
175
150
125
100
75
50
25
0
0
0.5 1
1.5 2
2.5 3
3.5 4
4.5 5
V
GS
= 6 V
V
GS
= 15 V
V
GS
= 12 V
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 7 V
T
J
= 25 °C
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
DS
- Drain-to-Source Voltage (V)
Fig. 5 - Typical Drain-to-Source Current Output Characteristics,
at T
J
= 175 °C
V
GS
-
Gate-to-Source
Voltage (V)
Fig. 8 - Typical MOSFET Transfer Characteristics
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
20
10
V
GS
= 10 V
I
DSS
-
Drain to
Source
current
(mA)
-
I
DS
= 150 A
1
T
J
= 175 °C
0.1
0.01
0.001
T
J
= 125 °C
15
10
5
0.0001
T
J
= 25 °C
0
0
20
40
60
80 100 120 140 160 180
1E -05
0
20 40 60 80 100 120 140 160 180 200 220
T
J
- Junction Temperature (°C)
V
DS
- Drain-to-Source Voltage (V)
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
I
FSD
- Forward
Source
to Drain Current (A)
280
240
200
160
120
80
40
T
J
= 175 °C
T
J
= 125 °C
5
V
GSTH
-
Threshold Voltage (V)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.20
0.40
0.60
0.80
1.00
1.20
V
FSD
- Drain to
Source
Forward Voltage Drop Characteristics (V)
Fig. 7 - Typic Body Diode Forward Voltage Drop Characteristics
I
D
(mA)
Fig. 10 - Typical MOSFET Threshold Voltage
Revision: 14-Aug-13
Document Number: 94846
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FC220SA20
www.vishay.com
1
t
d(on)
Vishay Semiconductors
Switching
Time (μs)
t
d(on)
t
r
t
d(off)
0.1
t
f
1
Switching
Time (μs)
t
d(off)
t
r
t
f
0.1
0.01
20
40
60
80
100
120
140
160
0.01
0
10
20
30
40
50
60
I
DS
- Drain-to-Source Current (A)
Fig. 11 - Typical MOSFET Switching Time vs. I
DS
,
T
J
=125 °C, V
DD
= 120 V, V
GS
= 10 V, L = 500 μH, R
g
= 5
Diode Used: 20CZU02
R
g
(Ω)
Fig. 12 - Typical MOSFET Switching Time vs. R
g
,
T
J
=125 °C, I
DS
= 150 A, V
DD
= 120 V, V
GS
= 10 V, L = 500 μH
Diode Used: 20CZU02
1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.1
P
DM
0.01
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
0.0001
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.00001
.
1
Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Z
thJC
Characteristics, MOSFET
25 000
22 500
20 000
16
V
GS
,
Gate
to
Source
Voltage (V)
C
iss
(pF)
I
D
= 150 A
V
DS
= 40 V
V
DS
= 100 V
14
12
10
8
6
4
2
0
V
DS
= 160 V
C - Capacitance (pF)
17 500
15 000
12 500
10 000
7500
5000
2500
0
1
V
GS
= 0 V; f = 1 MHz
C
iss
= C
gs
+ C
gd;
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
(pF)
C
rss
(pF)
10
100
0
40 80 120 160 200 240 280 320 360 400
V
DS
- Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
Q
g
- Total
Gate
Charge (nC)
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
Revision: 14-Aug-13
Document Number: 94846
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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