VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
Power MOSFET, 72 A
FEATURES
•
•
•
•
•
•
•
SOT-227
Fully isolated package
Easy to use and parallel
Low on-resistance
Dynamic dV/dt rating
Fully avalanche rated
Simple drive requirements
Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
500 V
61.5 m
72 A
Modules - MOSFET
SOT-227
PRODUCT SUMMARY
V
DSS
R
DS(on)
I
D
Type
Package
DESCRIPTION
Third Generation Power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 600 W to 1000 W. The low thermal
resistance
of the SOT-227 contribute to its wide
acceptance throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
GS
10 V
Pulsed drain current
Power dissipation
Gate to source voltage
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
SYMBOL
I
D
I
DM (1)
P
D
V
GS
E
AS (2)
I
AR (1)
E
AR (1)
dV/dt
(3)
T
J
, T
Stg
V
ISO
M4 screw, on terminals and heatsink
T
C
= 25 °C
T
C
= 90 °C
TEST CONDITIONS
T
C
= 25 °C
T
C
= 90 °C
MAX.
72
52
228
1136
545
± 20
725
22
120
10
- 55 to + 150
2.5
1.3
W
V
mJ
A
mJ
V/ns
°C
kV
Nm
A
UNITS
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2)
Starting T = 25 °C, L = 500 μH, R = 2.4
,
I
J
g
AS
= 57 A (see fig. 18)
(3)
I
57 A, dI /dt
200 A/μs, V
SD
F
DD
V
(BR)DSS
, T
J
150 °C
Revision: 13-Aug-13
Document Number: 94782
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
Mounting torque
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
- 55
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
150
0.11
-
-
1.3
UNITS
°C
°C/W
g
Nm
SOT-227
ELECTRICAL CHARACTERISTCS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
SYMBOL
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on) (1)
V
GS(th)
g
fs
I
DSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 1.0 mA
Reference to 25 °C, I
D
= 1 mA
V
GS
= 10 V, I
D
= 34 A
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA, T
J
= 125 °C
V
DS
= 50 V, I
D
= 34 A
V
DS
= 500 V, V
GS
= 0 V
Drain to source leakage current
V
DS
= 500 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 500 V, V
GS
= 0 V, T
J
= 150 °C
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Note
(1)
Pulse width
300 μs, duty cycle
2 %
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
V
GS
= 20 V
V
GS
= - 20 V
I
D
= 60 A
V
DS
= 400 V
V
GS
= 10 V; see fig. 15 and 19
(1)
V
DD
= 250 V
I
D
= 60 A
R
g
= 2.4
L = 500 μH; diode used: 60APH06
V
DD
= 250 V
I
D
= 60 A
R
g
= 2.4
L = 500 μH; diode used: 60APH06
Between lead, and center of die contact
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 14
MIN.
500
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.64
61.5
3.0
1.9
52.5
0.5
30
0.2
-
-
225
51
98
134
44
150
43
135
47
160
35
5.0
10 000
1500
50
MAX.
-
-
80.0
4.0
-
-
50
500
3.0
200
- 200
338
77
147
-
-
-
-
-
-
-
-
-
-
-
-
pF
nH
ns
ns
nC
UNITS
V
V/°C
m
V
S
μA
mA
nA
Revision: 13-Aug-13
Document Number: 94782
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current (body diode)
Pulsed source current (body diode)
SYMBOL
I
S
I
SM (1)
TEST CONDITIONS
D
MIN.
-
-
S
TYP.
-
-
0.9
0.75
660
46
15
880
50
23
MAX.
72
228
1.31
-
-
-
-
-
-
-
UNITS
MOSFET symbol showing
the integral reverse p-n
junction diode.
G
A
Diode forward voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Forward turn-on time
V
SD (2)
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= 57 A, V
GS
= 0 V
T
J
= 125 °C, I
S
= 57 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs
(2)
-
-
-
-
-
-
V
ns
A
μC
ns
A
μC
T
J
= 125 °C, I
F
= 50 A, dI
F
/dt = 100
A/μs
(2)
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Pulse width
300 μs, duty cycle
2 %
160
180
160
I
DS
- Drain-Source Current (A)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
I
DS
- Continuous Drain-Source Current (A)
Allowable Case Temperature (°C)
140
120
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
DC
100
80
60
40
20
0
V
GS
= 6 V
V
GS
= 5 V
0
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
Fig. 1 - Maximum DC MOSFET Drain-Source Current I
DS
(A)
Fig. 3 - Typical Drain-to-Source Output Characteristics
at T
J
= 25 °C
110
I
DS
- Drain-to-Source Current (A)
IDS - Continuous Drain-Source Current (A)
100
T
J
= 125 °C
100
90
80
70
60
50
40
30
20
10
0
0
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
10
T
J
= 25 °C
T
J
= 150 °C
1
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 10 V
0.1
0.1
1.0
V
DS
- Drain-to-Source Voltage (V)
10
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
Fig. 2 - Typical Drain-to-Source Output Characteristics
Fig. 4 - Typical Drain-to-Source Current Output Characteristics
at T
J
= 125 °C
Revision: 13-Aug-13
Document Number: 94782
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
140
I
DS
- Drain-to-Source Current (A)
100
90
I
DS
- Drain-to-Source Current (A)
80
70
60
50
40
30
20
10
0
0
2
4 6 8 10 12 14 16 18 20
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
120
100
80
60
40
20
T
J
= 25 °C
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GS
-
Gate-to-Source
Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
V
GS
= 6 V
V
GS
= 5 V
Fig. 5 - Typical Drain-to-Source Current Output Characteristics
at T
J
= 150 °C
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
200
180
160
140
120
100
80
60
40
0
20 40 60 80 100 120 140 160
T
J
- Junction Temperature (°C)
I
D
= 60 A
V
GS
= 10 V
Fig. 8 - Typical MOSFET Transfer Characteristics
10
1
T
J
= 150 °C
0.1
0.01
0.001
T
J
= 125 °C
I
DS
- Drain-to-Source Current (A)
T
J
= 25 °C
0.0001
0.00001
0
100
200
300
400
500
600
V
DS
- Drain-to-Source Voltage (V)
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
I
FSD
- Forward
Source-to-Drain
Current (A)
280
240
200
160
T
J
= 150 °C
120
80
40
0
0.0
0.5
1.0
1.5
2.0
V
FSD
- Drain-to-Source Forward Voltage Drop
Characteristics (V)
T
J
= 125 °C
T
J
= 25 °C
V
GSTH
- Threshold Voltage (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0.20
0.40
0.60
I
D
(mA)
0.80
1.00
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
Fig. 10 - Typical MOSFET Threshold Voltage
Revision: 13-Aug-13
Document Number: 94782
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FA72SA50LC
www.vishay.com
Vishay Semiconductors
1
t
d(on)
t
d(off)
1
Switching
time (μs)
Switching
Time (μs)
t
d(off)
t
d(on)
0.1
t
f
t
r
0.1
t
f
t
r
0.01
0
10
20
30
40
50
60
Drain-to-source current - I
ds
(A)
70
0.01
0
10
20
30
R
g
(Ω)
40
50
60
Fig. 11 - Typical MOSFET Switching Time vs. I
DS
, T
J
= 125 °C,
V
DD
= 250 V, V
GS
= 10 V, L = 500 μH, R
G
= 2.4
Diode used: 60APH06
Fig. 12 - Typical MOSFET Switching Time vs. R
g
, T
J
= 125 °C,
I
DS
= 100 A, V
DD
= 250 V, V
GS
= 10 V, L = 500 μH
Diode used: 60APH06
1
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.1
Notes:
0.01
0.001
0.00001
0.75
0.50
0.25
0.1
0.05
0.02
DC
0.0001
0.001
0.01
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance Z
thJC
Characteristics, MOSFET
15 000
V
GS
-
Gate-to-Source
Voltage (V)
12 000
V
GS
C
iss
C
rss
C
oss
= 0 V,
f = 1 MHz
= C
gs
+ C
gd
,
C
ds
SHORTED
= C
gd
= C
ds
+ C
gd
20
I
D
= 57 A
16
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
C - Capacitance (pF)
C
iss
9000
12
6000
C
oss
3000
8
4
FOR TEST CIRCUIT
SEE
FIGURE 19
0
60
120
180
240
300
Q
g
- Total
Gate
Charge (nC)
360
C
rss
0
1
10
100
0
V
DS
-
Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
Revision: 13-Aug-13
Document Number: 94782
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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