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VI20100SG

产品描述High Voltage Trench MOS Barrier Schottky Rectifier
文件大小152KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VI20100SG概述

High Voltage Trench MOS Barrier Schottky Rectifier

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V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
V20100SG
PIN 1
PIN 2
CASE
3
1
VF20100SG
PIN 1
PIN 2
2
3
PIN 3
PIN 3
TO-263AB
K
K
TO-262AA
TYPICAL APPLICATIONS
A
NC
1
VB20100SG
NC
A
K
HEATSINK
2
3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
VI20100SG
PIN 1
PIN 2
K
PIN 3
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variations
20 A
100 V
150 A
0.75 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single die
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V20100SG
VF20100SG VB20100SG
100
20
150
150
1.0
10 000
1500
-40 to +150
VI20100SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 09-Sep-13
Document Number: 88966
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VI20100SG相似产品对比

VI20100SG V20100SG_15 VB20100SG VF20100SG
描述 High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier

 
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