NVR5198NL
Power MOSFET
60 V, 155 mW, Single N−Channel Logic
Level, SOT−23
Features
•
•
•
•
Small Footprint Industry Standard Surface Mount SOT−23 Package
Low R
DS(on)
for Low Conduction Losses and Improved Efficiency
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
TYP
155 mW @ 10 V
205 mW @ 4.5 V
I
D
MAX
2.2 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
YJ−mb
(Notes 1, 2, 3, and 4)
Power Dissipation
R
YJ−mb
(Notes 1 and 3)
Continuous Drain
Current R
qJA
(Note 1, 2, 3, and 4)
Power Dissipation R
qJA
(Notes 1 and 3)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C,
t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
2.2
1.6
1.5
0.6
1.7
1.2
0.9
0.4
27
−55
to
150
1.9
260
A
°C
A
°C
AAL
M
G
W
1
2
SOT−23
CASE 318
STYLE 21
A
3
W
S
Unit
V
V
A
G
N−Channel
D
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
AAL M
G
G
1
Gate
2
Source
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NVR5198NLT1G
NVR5198NLT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 1
1
Publication Order Number:
NVR5198NL/D
NVR5198NL
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Lead #3
−
Drain (Notes 2 and 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Max
86
139
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
RR
I
S
= 1 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
V
GS
= 0 V,
I
S
= 1 A
T
J
= 25°C
T
J
= 125°C
V
DS
= 30 V, V
GS
= 10 V,
I
D
= 1 A, R
G
= 10
W
V
DS
= 48 V, I
D
= 1 A
V
GS
= 10 V
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
DS
= 48 V,
I
D
= 1 A
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 0 V, I
D
= 250
mA
Reference to 25°C, I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
70
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
Reference to 25°C, I
D
= 250
mA
V
GS
= 10 V, I
D
= 1 A
V
GS
= 4.5 V, I
D
= 1 A
V
DS
= 5.0 V, I
D
= 1 A
1.5
−6.5
107
142
3
2.5
V
mV/°C
155
205
mW
Forward Transconductance
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
182
25
16
2.8
5.1
0.3
0.8
1.5
3.1
8
V
W
ns
nC
pF
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
5
7
13
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.8
0.6
12
9
3
6
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
5. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NVR5198NL
TYPICAL CHARACTERISTICS
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
GS
= 10 V
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
GS
= 6.0 V
I
D
, DRAIN CURRENT (A)
V
GS
= 5.0 V
V
GS
= 4.5 V
V
DS
= 5 V
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0 V
V
GS
= 4.0 V
V
GS
= 3.8 V
V
GS
= 3.6 V
V
GS
= 3.4 V
V
GS
= 3.2 V
T
J
= 25°C
T
J
= 150°C
T
J
=
−55°C
1
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
3
4
5
6
7
8
9
10
I
D
= 1 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
1
2
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3
4
5
6
7
8
9 10 11 12 13 14 15
V
GS
, GATE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (Normalized)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
1.150
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 250
mA
I
D
= 1 A
V
GS
= 10 V
−25
0
25
50
75
100
125
150
0.925
0.900
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
http://onsemi.com
3
NVR5198NL
TYPICAL CHARACTERISTICS
V
GS(th)
, NORMALIZED THRESHOLD VOLTAGE
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
−50
1
10,000
I
D
= 250
mA
I
DSS
, LEAKAGE (nA)
1000
T
J
= 125°C
100
T
J
= 85°C
10
T
J
= 150°C
−25
0
25
50
75
100
125
150
0
5
10 15
20
25
30
35 40
45
50 55 60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
250
C, CAPACITANCE (pF)
225
200
175
150
125
100
75
50
C
OSS
25
C
RSS
0
0 5 10 15
C
ISS
T
J
= 25°C
f = 1 MHz
V
GS
= 0 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
275
12
11
10
9
8
7
6
5
4
3
2
1
0
Q
GS
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
55
50
45
V
GS
40
35
30
Q
GD
V
DS
= 48 V
I
D
= 1 A
T
J
= 25°C
25
20
15
10
Q
T
V
DS
20
25
30 35
40
45 50
55
60
0
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Q
G
, TOTAL GATE CHARGE (nC)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
V
DD
= 30 V
I
D
= 1 A
V
GS
= 10 V
10
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 150°C
T
J
= 125°C
T
J
= 100°C
1
T
J
= 85°C
t
d(off)
t, TIME (ns)
10
t
r
t
d(on)
1
t
f
0.1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
T
J
= 25°C
0.4
0.5
0.6
0.7
0.8
T
J
=
−55°C
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
http://onsemi.com
4
NVR5198NL
TYPICAL CHARACTERISTICS
100
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
I
D
, DRAIN CURRENT (A)
10
10
mS
100
mS
1 mS
10 mS
R
DS(on)
Limit
Thermal Limit
Package Limit
1
0.1
0.01
dc
10
100
0.1
1
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1%
1
0.000001
0.00001
Single Pulse
0.0001
0.001
0.01
t, TIME (sec)
0.1
1
10
100
1000
R
qJA
Steady State = 139°C/W
Figure 14. Thermal Impedance (Junction−to−Ambient)
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
