NVMFS5885NL
Power MOSFET
Features
60 V, 15 mW, 39 A, Single N−Channel
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFS5885NLWF
−
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
60 V
R
DS(ON)
MAX
15 mW @ 10 V
21 mW @ 4.5 V
I
D
MAX
39 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1 &
3)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
"20
39
28
54
27
10.2
7.2
3.7
1.8
179
−55
to
175
46
49
A
°C
A
mJ
1
Unit
V
V
A
G (4)
W
S (1,2,3)
A
N−CHANNEL MOSFET
D (5,6)
W
MARKING
DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 18 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
T
L
260
°C
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Notes 2, 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
2.8
41
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 3
1
Publication Order Number:
NVMFS5885NL/D
NVMFS5885NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
1.0
10
±100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±
20 V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 15 A
1.5
11.6
15.2
2.5
15
21
V
mW
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 15 A
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 15 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 48 V, I
D
= 15 A
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 15 A
V
GS
= 0 V, f = 1 MHz,
V
DS
= 25 V
1340
125
85
12
1.1
4.0
6.3
21
nC
nC
pF
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10
64
18
52
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.8
0.7
20
15
5.0
16
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5885NL
TYPICAL CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
2
3
V
GS
= 3.2 V
4
5
3.6 V
80
T
J
= 25°C
10 V
4.0 V
6.5 V
4.5 V
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
2
T
J
= 125°C
T
J
=
−55°C
3
4
5
T
J
= 25°C
V
DS
≥
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
I
D
= 15 A
T
J
= 25°C
0.020
Figure 2. Transfer Characteristics
T
J
= 25°C
0.018
0.016
0.014
0.012
0.010
0.008
V
GS
= 10 V
V
GS
= 4.5 V
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.6
2.2
1.8
1.4
1.0
0.6
V
GS
= 15 V
I
D
= 4.5 A
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
50
25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS5885NL
TYPICAL CHARACTERISTICS
1600
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
0
C
rss
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
6
4
2
0
Q
gs
Q
gd
V
DS
= 48 A
I
D
= 15 A
T
J
= 25°C
0
2
4
6
8
10
12
14
16
18
20
22
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
40
35
I
S
, SOURCE CURRENT (A)
30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
1000
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
V
DD
= 48 V
V
GS
= 4.5 V
I
D
= 15 A
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
V
GS
= 10 V
100
ms
Single Pulse
1 ms
T
C
= 25°C
10 ms
Figure 10. Diode Forward Voltage vs. Current
10
ms
dc
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVMFS5885NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.01
0.000001
PULSE TIME (sec)
Figure 12. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFS5885NLT1G
NVMFS5885NLWFT1G
NVMFS5885NLT3G
NVMFS5885NLWFT3G
Marking
V5885L
5885LW
V5885L
5885LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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