1N 4448
Small-Signal Diode - Fast Switching Rectifier
Reverse Voltage 100V Forward Current 150mA
Features
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4448.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted.)
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current
half wave rectification with resistive load
at T
amb
=25
o
C and f>50Hz
(1)
Surge forward current at t<1s and T
j
=25
o
C
Power dissipation at T
amb
=25
o
C
(1)
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
R
θ
JA
T
j
T
S
Limit
75
100
150
500
500
350
175
-65 to +175
Unit
Volts
Volts
mA
mA
mW
o
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
Notes:
C/W
o
C
C
o
1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
388
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Forward voltage
Symbol
V
F
I
R
V
(BR)R
C
tot
t
rr
η½
Test Condition
I
F
=5mA
I
F
=10mA
V
R
=20V
V
R
=75V
V
R
=20V, T
J
=150
O
C
I
R
=100
u
A (pulsed)
V
F
=V
R
=0V
I
F
=10mA, I
R
=1mA
V
R
=6V, R
L
=100
Ω
f=100MHz, V
RF
=2V
Min.
0.62
-
-
-
-
100
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
-
Max.
0.72
1.0
25
5.0
50
-
4.0
4.0
-
Unit
Volt
nA
uA
uA
Volts
pF
ns
-
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
389
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