NCS210, NCS211, NCS212,
NCS213, NCS214, NCS215
Current-Shunt Monitor,
Voltage Output,
Bi-Directional Zero-Drift
www.onsemi.com
GND
V
S
2
3
Features
•
•
•
•
•
•
•
•
Wide Common−Mode Input Range −0.3 V to 26 V
Supply Voltage Range from 2.7 V to 26 V
Low Offset Voltage
±60
mV
Max
Low Offset Drift (0.1
mV/°C)
Low Gain Error (max 1%)
Rail−to−rail Input and Output Capability
Low Current Consumption (typ 65
mA,
100
mA
max)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
*NC V
S
REF
GND
8
9
1
2
7
6
5
4
3
IN−
IN−
IN+
OUT 10
*NC IN+
*NC denotes no internal connection. These pins can be left floating or
connected to any voltage between Vs and GND.
MARKING DIAGRAMS
6
XXXMG
G
XXMG
G
•
•
•
•
Current Sensing (High−Side/Low−Side)
Automotive
Telecom
Sensors
1
XXX = Specific Device Code (See page 4)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Product
NCS213
NCS215
NCS214
NCS210
NCS211
NCS212
Gain
50
75
100
200
500
1000
R3−R4
20 kW
13.3 kW
10 kW
5 kW
2 kW
1 kW
R1−R2
1 MW
1 MW
1 MW
1 MW
1 MW
1 MW
V
OUT
+
I
LOAD
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
R
SHUNT
GAIN
)
V
REF
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
October, 2016 − Rev. 6
− +
The NCS210, NCS211, NCS212, NCS213, NCS214, and NCS215
are voltage output current shunt monitors that can measure voltage
across shunts at common−mode voltages from −0.3 V to 26 V,
independent of supply voltage. Six fixed gains are available: 50 V/V,
75 V/V, 100 V/V, 200 V/V, 500 V/V, or 1000 V/V. The low offset of
the zero−drift architecture enables current sensing with maximum
drops across the shunt as low as 10 mV full−scale.
The devices can operate from a single +2.7 V to +26 V power
supply, drawing a maximum of 100
mA
of supply current. All versions
are specified over the extended operating temperature range (–40°C to
+125°C). Available in SC−70 and thin UQFN space−saving packages.
SC70−6
SQ SUFFIX
CASE 419B
1
UQFN10
MU SUFFIX
CASE 488AT
PIN CONNECTIONS
REF
1
6
5
4
OUT
IN−
IN+
Publication Order Number:
NCS210/D
NCS210, NCS211, NCS212, NCS213, NCS214, NCS215
Supply
R
SHUNT
NCS21x
R3
IN−
IN+
R4
REF
V
S
+2.7 V to +26 V
0.01
mF
To
0.1
mF
GND
R2
−
+
OUT
Output
Reference
Voltage
Load
R1
Figure 1. Application Schematic
Table 1. MAXIMUM RATINGS
Rating
Supply Voltage (Note 1)
Analog Inputs
Differential (V
IN+
)−(V
IN−
)
Common−Mode (Note 2) NCS21x
NCV21x
REF Input
Output (Note 2)
Input Current into Any Pin (Note 2)
Maximum Junction Temperature
Storage Temperature Range
ESD Capability, Human Body Model (Note 3)
ESD Capability, Machine Model (Note 3)
Charged Device Model (Note 3)
T
J(max)
TSTG
HBM
MM
CDM
V
REF
V
OUT
NCS21x
NCV21x
Symbol
V
S
V
IN+,
V
IN−
Value
+26
+28
−26 to +26
GND−0.3 to +26
GND−0.3 to +28
GND−0.3 to ( V
s
) +0.3
GND−0.3 to ( V
s
) +0.3
5
+150
−65 to +150
±3000
±100
±1000
V
V
mA
°C
°C
V
V
V
Unit
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.
3. This device series incorporates ESD protection and is tested by the following methods
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model tested per AEC−Q100−011.
Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78
Table 2. THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, SC70 (Note 4)
Thermal Resistance, Junction−to−Air (Note 5)
Symbol
R
qJA
Value
250
Unit
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
5. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
Table 3. RECOMMENDED OPERATING RANGES
Rating
Supply Voltage
Ambient Temperature
Symbol
V
S
T
A
Min
2.7
−40
Max
26
125
Unit
V
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NCS210, NCS211, NCS212, NCS213, NCS214, NCS215
Table 4. ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range, T
A
= −40°C to 125°C, guaranteed by characterization and/or design.
At T
A
= +25°C, V
SENSE
= V
IN+
− V
IN−.
NCS210, NCS213, NCS214 and NCS215: V
S
= +5 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
NCS211 and NCS212: V
S
= +12 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
Parameter
GAIN
NCS210
NCS211
NCS212
NCS213
NCS214
NCS215
Gain Error
NCV210
Gain Error vs. Temperature
NCV210
Nonlinearity Error
Maximum Capacitive Load
VOLTAGE OFFSET
Offset Voltage
(RTI Note 6)
NCS210,NCS211,
NCS212, NCS214,
NCS215
NCS213
NCV210
Offset Drift
NCS213
NCV210
INPUT
Input Bias Current
Common−Mode Input Voltage Range
Common−Mode
Rejection Ratio
NCS210, NCS211,
NCS212, NCS214,
NCS215
V
S
= 5 V, V
IN+
= 2 V to +26 V,
V
SENSE
= 0 mV
V
S
= 3.3 V, V
IN+
= 3 V to +26 V,
V
SENSE
= 0 mV
V
S
= 3.3 V, V
IN+
= 0 V to +26 V,
V
SENSE
= 0 mV (T
A
= −10°C to 85°C)
Common−Mode
Rejection Ratio
NCS213
V
S
= 5 V, V
IN+
= 2 V to +26 V,
V
SENSE
= 0 mV
V
S
= 3.3 V, V
IN+
= 3 V to +26 V,
V
SENSE
= 0 mV
V
S
= 3.3 V, V
IN+
= 0 V to +26 V,
V
SENSE
= 0 mV (T
A
= −10°C to 85°C)
Common−Mode
Rejection Ratio
NCV210
V
S
= 5 V, V
IN+
= 2 V to +26 V,
V
SENSE
= 0 mV
V
S
= 3.3 V, V
IN+
= 3 V to +26 V,
V
SENSE
= 0 mV
OUTPUT
Output Voltage Low
Output Voltage High
Referenced from GND
R
L
= 10 kΩ to Ground
Referenced from V
S
R
L
= 10 kΩ to Ground
V
OL
V
OH
5
0.05
50
0.2
mV
V
CMRR
CMRR
V
SENSE
= 0 mV
I
IB
V
CM
CMRR
−0.3
103
103
103
97
97
97
100
100
115
115
120
110
110
115
115
115
60
26
mA
V
dB
dB
dB
dB
dB
dB
dB
dB
dV/dT
dV/dT
dV/dT
V
SENSE
= 0 mV
V
OS
±0.55
±60
mV
V
SENSE
= −5 mV to 5 mV
V
SENSE
= −5 mV to 5 mV
T
A
= −10°C to 125°C
T
A
= −40°C to 125°C
V
SENSE
= −5 mV to 5 mV
No sustained oscillation
G
200
500
1000
50
100
75
+0.2
+0.2
7
7
±0.01
1
+1
+1.5
14
70
V/V
Test Conditions
Symbol
Min
Typ
Max
Unit
G
e
G
e
%
%
ppm/°C
ppm/°C
%
nF
±5
±0.55
0.1
0.5
0.1
±100
±90
0.6
1.5
1.0
mV
mV
mV/°C
mV/°C
mV/°C
www.onsemi.com
3
NCS210, NCS211, NCS212, NCS213, NCS214, NCS215
Table 4. ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range, T
A
= −40°C to 125°C, guaranteed by characterization and/or design.
At T
A
= +25°C, V
SENSE
= V
IN+
− V
IN−.
NCS210, NCS213, NCS214 and NCS215: V
S
= +5 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
NCS211 and NCS212: V
S
= +12 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
Parameter
DYNAMIC PERFORMANCE
Bandwidth (f
−3dB
)
C
LOAD
= 10 pF, NCS210
C
LOAD
= 10 pF, NCS211
C
LOAD
= 10 pF, NCS212
C
LOAD
= 10 pF, NCS213
C
LOAD
= 10 pF, NCS214
C
LOAD
= 10 pF, NCS215
BW
40
25
10
100
60
50
0.4
kHz
Test Conditions
Symbol
Min
Typ
Max
Unit
Slew Rate
NOISE
Spectral Density, 1 kHz (RTI Note 6)
POWER SUPPLY
Operating Voltage Range
Quiescent Current
Quiescent Current over Temperature
Power Supply Rejection Ratio
6. RTI = referenced−to−input.
V
SENSE
= 0 mV
V
SENSE
= 0 mV
V
SENSE
= 0 mV
V
S
= +2.7 V to +26 V, V
IN+
=18 V,
V
SENSE
= 0 mV
SR
V/ms
e
n
V
s
I
DD
PSRR
2.7
35
nV/ Hz
26
65
±0.1
100
115
±10
V
mA
mA
mV/V
ORDERING INFORMATION
Device
NCS210SQT2G
NCS211SQT2G
NCS212SQT2G (In Development)**
NCS213SQT2G (In Development)**
NCS214SQT2G (In Development)**
NCS215SQT2G (In Development)**
NCV210SQT2G *
NCV211SQT2G * (In Development)**
NCV212SQT2G * (In Development)**
NCV213SQT2G * (In Development)**
NCV214SQT2G * (In Development)**
NCV215SQT2G * (In Development)**
NCS210MUTAG (In Development)**
NCS211MUTAG (In Development)**
NCS212MUTAG (In Development)**
NCS213MUTAG (In Development)**
NCS214MUTAG (In Development)**
NCS215MUTAG (In Development)**
Gain
200
500
1000
50
100
75
200
500
1000
50
100
75
200
500
1000
50
100
75
Marking
AAP
AAM
AAN
AAQ
AAR
AAT
VAP
VAM
VAN
VAQ
VAR
VAT
TBD
TBD
TBD
TBD
TBD
TBD
UQFN10
(Pb−Free)
3000 / Tape and Reel
SC70−6
(Pb−Free)
3000 / Tape and Reel
Package
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
** Contact local sales office for availability.
www.onsemi.com
4
NCS210, NCS211, NCS212, NCS213, NCS214, NCS215
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
aaa H D
D
A
D
5
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
2X
H
GAGE
PLANE
6
L2
E
1
2X
2
3
L
DETAIL A
E1
aaa C
bbb H D
2X 3 TIPS
e
B
TOP VIEW
6X
b
ddd
M
C A-B D
A2
A
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
c
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
