GDSSF22A5E
Main Product Characteristics:
V
DSS
R
DS(on)
I
D
20V
3Ω
238mA
Pin Assignment
Schematic diagram
Features and Benefits:
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
Pb-Free Package is Available
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery
time. These features combine to make this design an extremely efficient and reliable device for use in Power
Management Load Switch, Level Shift, Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games,
Hand Held Computers, etc.
Absolute max Rating
@T
A
=25℃ unless otherwise specified
Symbol
ID
IDM
PD
VDS
VGS
TJ
T
L
I
SD
TSTG
Parameter
Continuous Drain Current
①
Pulsed Drain Current (t
p
≤10μs)
②
Power Dissipation
③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Lead Temperature for Soldering Purposes
Continuous Source Current (Body Diode)
Max.
238
714
300
20
± 10
-55 to 150
260
238
Units
mA
mW
V
V
°C
mA
Thermal Resistance
Symbol
Characterizes
Junction-to-Ambient (steady-state)
④
Value
Unit
R
θJA
416
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF22A5E
Electrical Characterizes
@T
A
=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Static Drain-to-Source
on-resistance
Min.
20
—
—
0.5
Typ.
—
1.5
2.2
1.0
Max.
—
3.0
Ω
3.5
1.5
V
VGS = 2.5V, ID = 10mA
VDS = 3V,
ID = 100μA
VDS = 20V,
VGS = 0V
VGS =10V
μA
-100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
15
6.0
pF
VGS = 0V,
VDS =5V,
ƒ = 1.0MHz
ns
VGS=4.5V, VDS=5V,
ID=10mA, RG=10Ω
mS
VGS = -10V
ID = 10mA,VDS=3V
Units
V
Conditions
VGS = 0V,
ID = 100μA
VGS = 4.5V, ID = 10mA
RDS(on)
VGS(th)
Gate threshold voltage
Drain-to-Source leakage
current
Gate-to-Source forward
IDSS
—
—
1.0
μA
IGSS
leakage
Gate-to-Source reverse
leakage
—
—
100
g
FS
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
50
13
15
98
60
11.5
10
3.5
Source-Drain Ratings and Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
Min.
—
Typ.
0.66
Max.
0.8
Units
V
Conditions
IS=10mA, VGS=0V
Notes:
①The
maximum current rating is limited by bond-wires.
②
Repetitive rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF22A5E
Typical electrical and thermal characteristics
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF22A5E
Typical electrical and thermal characteristics
Test circuits and Waveforms
Switch Waveforms:
Suzhou Goodark Electronics Co., Ltd
Version 1.0