NTMFD4C50N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
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Features
•
•
•
•
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
R
DS(ON)
MAX
7.3 mW @ 10 V
I
D
MAX
18 A
10.8 mW @ 4.5 V
3.4 mW @ 10 V
27 A
5.2 mW @ 4.5 V
D1
(2, 3, 4, 9)
Applications
•
DC−DC Converters
•
System Voltage Rails
•
Point of Load
(1) G1
S1/D2 (10)
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
D1 3
D1 2
G1 1
(Bottom View)
9
D1
10
S1/D2
5 S2
6 S2
7 S2
8 G2
MARKING
DIAGRAM
1
DFN8
CASE 506BX
1
4C50N
AYWZZ
4C50N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 2
Publication Order Number:
NTMFD4C50N/D
NTMFD4C50N
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Drain−to−Source Voltage
Gate−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJA
(Note 1)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
Power Dissipation
RqJA (Note 1)
Continuous Drain Current R
qJA
≤
10 s (Note 1)
T
A
= 25°C
Q1
Q2
T
A
= 25°C
T
A
= 85°C
Steady
State
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain Current
R
qJA
(Note 2)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
Q1
Q2
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
Power Dissipation
R
qJA
(Note 2)
Pulsed Drain Current
T
A
= 25
°C
Q1
Q2
TA = 25°C
tp = 10
ms
Q1
Q2
Q1
Q2
Source Current (Body Diode)
Q1
Q2
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25C, V
DD
= 50 V, V
GS
= 10 V, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I
L
= 18 A
pk
I
L
= 29 A
pk
Q1
Q2
dV/dt
EAS
EAS
T
L
I
S
4.0
4.2
6
16
42
260
°C
V/ns
mJ
A
T
J
, T
STG
I
DM
P
D
Q2
Q1
I
D
P
D
Q2
Q1
I
D
P
D
Q2
Q1
Q2
Q1
Q2
Q1
I
D
12
8.6
18
13
1.88
1.97
18.2
13.1
27.4
19.8
4.37
4.6
9.1
6.6
13.7
9.9
1.09
1.15
55
82
−55 to +150
°C
A
W
A
W
A
W
A
V
GS
±20
V
Symbol
V
DSS
Value
30
Unit
V
Operating Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
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2
NTMFD4C50N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
FET
Q1
Q2
Junction−to−Ambient – Steady State (Note 4)
Q1
Q2
Junction−to−Ambient – (t
≤
10 s) (Note 3)
Q1
Q2
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
R
qJA
R
qJA
Symbol
R
qJA
Value
66.5
63.3
114.3
108.7
28.6
27.2
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Break-
down Voltage
Drain−to−Source Break-
down Voltage Temperature
Coefficient
Zero Gate Voltage Drain
Current
Q1
Q2
Q1
Q2
Q1
V
(BR)DSS
/ T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
V
GS
= 0 V,
V
DS
= 24 V
I
GSS
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D
= 1 mA
30
30
14.5
12
1
10
10
±100
±100
nA
mV /
°C
mA
V
FET
Symbol
Test Condition
Min
Typ
Max
Unit
Q2
Gate−to−Source Leakage
Current
Q1
Q2
V
GS
= 0 V, VDS =
±20
V
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Q1
Q2
Negative Threshold Temper-
ature Coefficient
Drain−to−Source On Resist-
ance
Q1
Q2
Q1
V
GS(TH)
/
T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Q2
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
Q1
Q2
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
Input Capacitance
Q2
Q1
Output Capacitance
Q2
Q1
Reverse Capacitance
Q2
C
RSS
C
OSS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
C
ISS
970
1950
430
990
125
50
pF
g
FS
I
D
= 10 A
I
D
= 10 A
I
D
= 20 A
I
D
= 20 A
V
GS(TH)
V
GS
= VDS, I
D
= 250
mA
1.3
1.3
4.7
5.1
5.8
8.7
2.7
4.0
43
68
7.3
10.8
3.4
5.2
S
mW
2.1
2.1
mV /
°C
V
V
DS
= 1.5 V, I
D
= 10 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4C50N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
Total Gate Charge
Q2
Q1
Threshold Gate Charge
Q2
Q1
Gate−to−Source Charge
Q2
Q1
Gate−to−Drain Charge
Q2
Q1
Total Gate Charge
Q2
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 10 A
Q
GD
Q
GS
Q
G(TH)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 10 A
Q
G(TOT)
9.3
13
1.6
3.3
3.3
6.0
4.2
3.0
19
29
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Q1
Turn−On Delay Time
Q2
Q1
Rise Time
Q2
Q1
Turn−Off Delay Time
Q2
Q1
Fall Time
Q2
t
f
t
d(OFF)
t
r
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
t
d(ON)
9.0
11
33
32
15
20
5.0
5.0
ns
SWITCHING CHARACTERISTICS
(Note 6)
Q1
Turn−On Delay Time
Q2
Q1
Rise Time
Q2
Q1
Turn−Off Delay Time
Q2
Q1
Fall Time
Q2
t
f
t
d(OFF)
t
r
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
t
d(ON)
6.0
8.0
26
26
18
25
4.0
4.0
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Forward Voltage
Q2
V
SD
V
GS
= 0 V,
I
S
= 3 A
V
GS
= 0 V,
I
S
= 3 A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
0.75
0.62
0.45
0.37
0.70
V
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
NTMFD4C50N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Reverse Recovery Time
Q2
Q1
Charge Time
Q2
Q1
Discharge Time
Q2
Q1
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Q1
Source Inductance
Q2
Q1
Drain Inductance
Q2
Q1
Gate Inductance
Q2
Q1
Gate Resistance
Q2
R
G
L
G
L
D
T
A
= 25°C
L
S
0.38
0.65
0.054
0.007
1.5
1.5
1.0
1.0
nH
nH
nH
Q2
Q
RR
tb
ta
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms, I
S
= 30 A
t
RR
23
38
11.6
18.6
11.4
19.4
10
25
nC
ns
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTMFD4C50NT1G
Package
DFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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