VS-100BGQ030
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 100 A
FEATURES
•
•
•
•
•
150 °C max. operating junction temperature
High frequency operation
Ultralow forward voltage drop
Continuous high current operation
Guard ring for enhanced ruggedness and long
term reliability
Cathode
Anode
PowerTab
®
• Screw mounting only
• Designed and qualified according to JEDEC
®
-JESD 47
• PowerTab
®
package
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
PowerTab
®
100 A
30 V
0.56 V
460 mA at 125 °C
150 °C
Single die
9 mJ
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-100BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
100 A
pk
(typical)
T
J
Range
CHARACTERISTICS
Rectangular waveform
T
C
VALUES
100
106
30
4500
0.49
150
-55 to +150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
100BGQ030
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 106 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
100
4500
A
850
36
8
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 8 A, L = 1.12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 12-Jun-15
Document Number: 94579
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ030
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
50 A
Forward voltage drop
V
FM (1)
100 A
50 A
100 A
T
J
= 125 °C, V
R
= 15 V
Reverse leakage current
I
RM (1)
T
J
= 150 °C, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
C
T
L
S
dV/dt
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 150 °C
TYP.
0.47
0.56
0.36
0.49
80
800
0.6
260
3800
3.5
10 000
MAX.
0.5
0.63
0.4
0.56
160
1100
2.4
460
pF
nH
V/μs
mA
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style PowerTab
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +150
0.50
°C/W
0.30
5
0.18
1.2 (10)
2.4 (20)
g
oz.
N·m
(lbf · in)
UNITS
°C
Mounting torque
Marking device
100BGQ030
I
F
- Instantaneous Forward Current (A)
1000
1000
150°C
I
R
- Reverse Current (mA)
100
125°C
100°C
100
T
J
= 150 °C
10
75°C
50°C
25°C
1
10
T
J
= 125 °C
T
J
= 25 °C
0.1
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 12-Jun-15
Document Number: 94579
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ030
www.vishay.com
Vishay Semiconductors
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Impedance (°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
160
100
180°
120°
90°
60°
30°
RMS Limit
DC
40
Allowable Case Temperature (°C)
Average Power Loss (W)
140
120
100
80
60
40
0
20
40
60
80
100
120
140
160
Square wave (D = 0.50)
80 % rated V
R
applied
see note (1)
DC
80
60
20
0
0
30
60
90
120
150
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 12-Jun-15
Document Number: 94579
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ030
www.vishay.com
I
FSM
- Non-Repetitive
Surge
Current (A)
Vishay Semiconductors
10 000
1000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following
Surge
100
10
100
1000
10 000
t
p
-
Square
Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(2)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
-
-
-
-
100 BGQ 030
2
3
4
Vishay Semiconductors product
Current rating
Essential part number
Voltage code = V
RRM
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Application note
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
Revision: 12-Jun-15
Document Number: 94579
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
PowerTab
®
DIMENSIONS
in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
15.60 (0.61)
14.80 (0.58)
1.35 (0.05)
1.20 (0.04)
8.54 (0.34)
8.20 (0.32)
4.70 (0.19)
4.50 (0.18)
Lead 1
12.40 (0.48)
12.10 (0.47)
18.25 (0.71)
18.00 (0.70)
27.65 (1.08)
27.25 (1.07)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.45 REF.
(0.21 REF.)
5.20 (0.20)
4.95 (0.19)
3.09 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
4.95 (0.19)
4.75 (0.18)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 08-Jun-15
Document Number: 95240
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
39.8 (1.56)
39.6 (1.55)
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
