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NCP1339DDR2G

产品描述High-Voltage, Quasi-Resonant Controller featuring Valley Lock-Out
文件大小366KB,共32页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NCP1339DDR2G概述

High-Voltage, Quasi-Resonant Controller featuring Valley Lock-Out

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NCP1339
High-Voltage, Quasi-
Resonant Controller
featuring Valley Lock-Out
and Power Saving Mode
The NCP1339 is a highly integrated quasi−resonant flyback
controller capable of controlling rugged and high−performance
off−line power supplies as required by adapter applications. With an
integrated active X−cap discharge feature and power savings mode,
the NCP1339 can enable no−load power consumption below 10 mW
for 45 W notebook adapters.
The quasi−resonant current−mode flyback stage features a
proprietary valley−lockout circuitry, ensuring stable valley switching.
This system works down to the 6
th
valley and toggles to a frequency
foldback mode to eliminate switching losses. When the loop tends to
force below 25−kHz frequencies, the NCP1339 skips cycles to contain
the power delivery.
To help build rugged converters, the controller features several key
protective features: an internal brown−out, a non−dissipative Over Power
Protection for a constant maximum output current regardless of the
input voltage, a latched over−voltage protection through a dedicated pin.
Features
www.onsemi.com
14
1
SOIC−14 NB
(LESS PIN 13)
D SUFFIX
CASE 751AN
MARKING DIAGRAM
14
NCP1339xG
AWLYWW
1
NCP1339 = Specific Device Code
x
= C, D, E, F, G, H, I or J
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
G
= Pb−Free Package
High−voltage Current Source for Lossless Start−up Sequence
X2 Capacitors Discharge Capability
Power Savings Mode (PSM) for Extremely Low No−Load Power:
Wide V
CC
Range from 10 V to 28 V
Latching−off 28−V V
CC
Over−Voltage Protection
Abnormal Overcurrent Fault Protection for Winding Short Circuit or
Inductor Saturation Detection
Integrated High−Voltage Startup Circuit with Brown−Out Detection
Fault Input for Severe Fault Conditions, NTC Compatible for OTP
Circuit Latching Off In Severe Fault Detection (OVP or OTP)
Internal Temperature Shutdown
Valley Switching Operation with Valley−Lockout for Noise−Free
Operation
Frequency Fold−back for Highest Performance in Standby Mode
25−kHz Clamp and Skip Mode
Timer−Based Overload Protection (Latched or Auto−Recovery
Options)
Adjustable Overpower Protection
4−ms Soft−Start Timer
ZCD Blanking Time to Ignore Leakage Ringing at Turn−Off:
3
ms
for C, D and E versions and 0.7
ms
for F, G, H, I and J versions
Ready for High−Density QR design (F, G, H, I and J versions)
These Devices are Pb−Free and are RoHS Compliant
PIN CONNECTIONS
X2
REM
OPP
ZCD
Fault
FB
CS
HV
NC
NC
VCC
DRV
GND
(For C, D, E, F, G, and H versions)
X2
REM
OPP
ZCD
Fault
FB
CS
HV
NC
IFF
VCC
DRV
GND
(For I and J versions)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 31 of this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
February, 2017 − Rev. 6
Publication Order Number:
NCP1339/D

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