BCW69LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
EBO
I
C
Value
−45
−5.0
−100
Unit
Vdc
Vdc
mAdc
1
2
3
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THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
(1)
Symbol
P
D
Max
225
1.8
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 318
−08,
STYLE 6
SOT−23 (TO
−236AB)
R
θJA
P
D
556
300
2.4
COLLECTOR
3
1
BASE
2
EMITTER
R
θJA
T
J
, T
stg
417
−55
to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
=
−2.0
mAdc, I
B
= 0)
Collector−Emitter Breakdown Voltage (I
C
=
−100
μAdc,
V
EB
= 0)
Emitter−Base Breakdown Voltage (I
E
=
−10
μAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−20
Vdc, I
E
= 0)
(V
CB
=
−20
Vdc, I
E
= 0, T
A
= 100°C)
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
−45
−50
−5.0
—
—
—
—
—
−100
−10
Vdc
Vdc
Vdc
nAdc
μAdc
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 2
1
Publication Order Number:
BCW69LT1/D
BCW69LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−2.0
mAdc, V
CE
=
−5.0
Vdc)
BCW69
BCW70
h
FE
—
120
215
—
−0.6
260
500
−0.3
−0.75
Vdc
Vdc
Collector−Emitter Saturation Voltage (I
C
=
−10
mAdc, I
B
=
−0.5
mAdc)
Base−Emitter On Voltage (I
C
=
−2.0
mAdc, V
CE
=
−5.0
Vdc)
V
CE(sat)
V
BE(on)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(I
E
= 0, V
CB
=
−10
Vdc, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mAdc, V
CE
=
−5.0
Vdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
C
obo
N
F
—
—
7.0
10
pF
dB
TYPICAL NOISE CHARACTERISTICS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
μA
30
μA
3.0
2.0
1.0 mA
100
μA
300
μA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
μA
100
μA
30
μA
10
μA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
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2
BCW69LT1
NOISE FIGURE CONTOURS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (μA)
500 700 1.0 k
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (μA)
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (μA)
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
Figure 5. Wideband
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BCW69LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
μs
80 DUTY CYCLE
≤
2.0%
300
μA
60
I
B
= 400
μA
350
μA
250
μA
200
μA
150
μA
0.6
0.4
40
20
0
100
μA
50
μA
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
− 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
− 55°C to 25°C
50
100
25°C to 125°C
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
0
0.1
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
2.4
0.1
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
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BCW69LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
t
d
@ V
BE(off)
= 0.5 V
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
−1.0
t
s
V
CC
= − 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
− 2.0 − 3.0 − 5.0 − 7.0 −10
− 20 − 30
I
C
, COLLECTOR CURRENT (mA)
− 50 − 70 −100
Figure 10. Turn−On Time
BANDWIDTH PRODUCT (MHz)
Figure 11. Turn−Off Time
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
7.0
C
ib
5.0
T
J
= 25°C
3.0
2.0
C
ob
f T, CURRENT−GAIN
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
Figure 13. Capacitance
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
P
(pk)
t
1
t
2
FIGURE 16
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−569)
Z
θJA(t)
= r(t)
•
R
θJA
T
J(pk)
−
T
A
= P
(pk)
Z
θJA(t)
0.01
0.01 0.02
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 100 k
k
Figure 14. Thermal Response
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