11AA010/11LC010
11AA020/11LC020
11AA040/11LC040
11AA080/11LC080
11AA160/11LC160
11AA161/11LC161
1K-16K UNI/O
®
Serial EEPROM Family Data Sheet
Features:
• Single I/O, UNI/O
®
Serial Interface Bus
• Low-Power CMOS Technology:
- 1 mA active current, typical
- 1 µA standby current (max.) (I-temp)
• 128 x 8 through 2,048 x 8 Bit Organizations
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kbps Max. Bit Rate – Equivalent to 100 kHz
Clock Frequency
• Self-Timed Write Cycle (including Auto-Erase)
• Page-Write Buffer for up to 16 Bytes
• STATUS Register for Added Control:
- Write enable latch bit
- Write-In-Progress bit
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
• High Reliability:
- Endurance: 1,000,000 erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4,000V
• 3-lead SOT-23 and TO-92 Packages
• 4-lead Chip Scale Package
• 8-lead PDIP, SOIC, MSOP, TDFN Packages
• Pb-Free and RoHS Compliant
• Available Temperature Ranges:
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 11AAXXX/11LCXXX
(11XX
*
) devices are a family of 1 Kbit through 16 Kbit
Serial Electrically Erasable PROMs. The devices are
organized in blocks of x8-bit memory and support the
patented** single I/O UNI/O
®
serial bus. By using
Manchester encoding techniques, the clock and data
are combined into a single, serial bit stream (SCIO),
where the clock signal is extracted by the receiver to
correctly decode the timing and value of each bit.
Low-voltage design permits operation down to 1.8V (for
11AAXXX devices), with standby and active currents of
only 1 uA and 1 mA, respectively.
The 11XX family is available in standard packages
including 8-lead PDIP and SOIC, and advanced pack-
aging including 3-lead SOT-23, 3-lead TO-92, 4-lead
Chip Scale, 8-lead TDFN, and 8-lead MSOP.
Package Types (not to scale)
MSOP
(MS)
NC
NC
NC
V
SS
1
2
3
4
8
7
6
5
PDIP/SOIC
(P, SN)
V
CC
NC
NC
SCIO
NC
NC
NC
Vss
1
2
3
4
V
CC
NC
6
NC
5
SCIO
8
7
TDFN
(MN)
NC
1
NC
2
NC
3
V
SS
4
8
7
6
5
SOT23
(TT)
V
CC
NC
NC
SCIO
V
SS
3
1 SCIO
2
V
CC
Pin Function Table
Name
SCIO
V
SS
V
CC
Ground
Supply Voltage
Function
Serial Clock, Data Input/Output
TO-92
(TO)
CS (Chip Scale)
(1)
V
CC
1
2 V
SS
SCIO 3
Vss
SCIO
Note 1:
Vcc
4 NC
(Top down view,
balls not visible
)
Available in I-temp, “AA” only.
* 11XX is used in this document as a generic part number for the 11 series devices.
** Microchip’s UNI/O
®
Bus products are covered by the following patent issued in the U.S.A.: 7,376,020.
2010 Microchip Technology Inc.
Preliminary
DS22067H-page 1
11AAXXX/11LCXXX
DEVICE SELECTION TABLE
Part Number
11LC010
11AA010
11LC020
11AA020
11LC040
11AA040
11LC080
11AA080
11LC160
11AA160
11LC161
11AA161
Density
Organization V
CC
Range
(bits)
1K
1K
2K
2K
4K
4K
8K
8K
16K
16K
16K
16K
128 x 8
128 x 8
256 x 8
256 x 8
512 x 8
512 x 8
1,024 x 8
1,024 x 8
2,048 x 8
2,048 x 8
2,048 x 8
2,048 x 8
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
Page Size
(Bytes)
16
16
16
16
16
16
16
16
16
16
16
16
Temp.
Ranges
I,E
I
I,E
I
I,E
I
I,E
I
I,E
I
I, E
I
Device
Address
0xA0
0xA0
0xA0
0xA0
0xA0
0xA0
0xA0
0xA0
0xA0
0xA0
0xA1
0xA1
Packages
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT, CS
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT, CS
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT, CS
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT, CS
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT,CS
P, SN, MS, MN, TO, TT
P, SN, MS, MN, TO, TT, CS
DS22067H-page 2
Preliminary
2010 Microchip Technology Inc.
11AAXXX/11LCXXX
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
SCIO w.r.t. V
SS
.....................................................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ................................................................................................................................. -65°C to 150°C
Ambient temperature under bias............................................................................................................... -40°C to 125°C
ESD protection on all pins.......................................................................................................................................... 4 kV
†
NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Automotive (E):
V
CC
= 2.5V to 5.5V
Min.
0.7*V
CC
-0.3
-0.3
0.05*Vcc
V
CC
-0.5
V
CC
-0.5
—
—
—
—
—
—
Max.
V
CC
+1
0.3*V
CC
0.2*V
CC
—
—
—
0.4
0.4
±4
±3
±1
7
Units
V
V
V
V
V
V
V
V
mA
mA
A
pF
V
CC
2.5V
V
CC
< 2.5V
V
CC
2.5V
(Note 1)
I
OH
= -300
A,
V
CC
= 5.5V
I
OH
= -200
A,
Vcc = 2.5V
I
O
I = 300
A,
V
CC
= 5.5V
I
O
I = 200
A,
Vcc = 2.5V
V
CC
= 5.5V
(Note 1)
Vcc = 2.5V
(Note 1)
V
IN
= V
SS
or V
CC
T
A
= 25°C, F
CLK
= 1 MHz,
V
CC
= 5.0V
(Note 1)
V
CC
=5.5V; F
BUS
=100 kHz, C
B
=100 pF
V
CC
=2.5V; F
BUS
=100 kHz, C
B
=100 pF
V
CC
= 5.5V
V
CC
= 2.5V
V
CC
= 5.5V
T
A
= 125°C
V
CC
= 5.5V
T
A
= 85°C
V
CC
= 5.5V
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
T
A
= -40°C to +125°C
Test Conditions
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
Sym.
V
IH
V
IL
V
HYS
V
OH
V
OL
I
O
I
LI
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Hysteresis of Schmitt
Trigger inputs (SCIO)
High-level output
voltage
Low-level output
voltage
Output current limit
(Note 2)
Input leakage current
(SCIO)
Internal Capacitance
(all inputs and
outputs)
D9
D10
D11
I
CC
Read Read Operating
Current
I
CC
Write Write Operating
Current
Iccs
Standby Current
—
—
—
—
—
—
3
1
5
3
5
1
50
mA
mA
mA
mA
A
A
A
D12
Note 1:
2:
I
CCI
Idle Mode Current
—
This parameter is periodically sampled and not 100% tested.
The SCIO output driver impedance will vary to ensure I
O
is not exceeded.
2010 Microchip Technology Inc.
Preliminary
DS22067H-page 3
11AAXXX/11LCXXX
TABLE 1-2:
AC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Automotive (E):
V
CC
= 2.5V to 5.5V
Min.
10
10
—
—
—
—
—
—
600
10
5
—
—
—
1M
Max.
100
100
±0.08
±0.75
±5
±0.25
100
100
—
—
—
50
5
10
—
Units
kHz
µs
UI
—
—
(Note 3)
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
T
A
= -40°C to +125°C
Test Conditions
AC CHARACTERISTICS
Param.
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Sym.
F
BUS
T
E
T
IJIT
Characteristic
Serial bus frequency
Bit period
Input edge jitter tolerance
F
DRIFT
Serial bus frequency drift
rate tolerance
F
DEV
T
OJIT
T
R
T
F
Serial bus frequency drift
limit
Output edge jitter
SCIO input rise time
(Note 1)
SCIO input fall time
(Note 1)
Start header setup time
Start header low pulse
time
Input filter spike
suppression (SCIO)
Write cycle time
(byte or page)
Endurance (per page)
% per byte —
% per
command
UI
ns
ns
µs
µs
µs
ns
ms
ms
cycles
—
(Note 3)
—
—
—
—
—
(Note 1)
Write, WRSR commands
ERAL, SETAL commands
25°C, V
CC
= 5.5V
(Note 2)
T
STBY
Standby pulse time
T
SS
T
HDR
T
SP
T
WC
—
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance
™
Model which can be obtained on Microchip’s web site:
www.microchip.com.
3:
A Unit Interval (UI) is equal to 1-bit period (T
E
) at the current bus frequency.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
V
HI
= V
CC
- 0.2V
C
L
= 100 pF
Timing Measurement Reference Level
Input
Output
0.5 V
CC
0.5 V
CC
DS22067H-page 4
Preliminary
2010 Microchip Technology Inc.
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