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NCE01H10D
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE01H10D uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●
V
DS
= 100V,I
D
=100A
R
DS(ON)
< 13mΩ @ V
GS
=10V (Typ:9.9mΩ)
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
NCE01H10D
Device
NCE01H10D
Device Package
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
E
AS
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Parameter
Limit
100
±20
100
80
380
200
1.33
800
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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Thermal Characteristic
R
θJC
Thermal Resistance,Junction-to-Case (Note 2)
NCE01H10D
0.75
℃
/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Symbol
Off Characteristics
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Condition
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
V
DS
=10V,I
D
=20A
Min
100
-
-
2
-
50
-
-
-
-
Typ
110
-
-
3
9.9
-
4800
340
150
15
50
40
55
85
18
28
-
-
38
53
Max
-
1
±100
4
13
-
-
-
-
-
-
-
-
-
-
-
1.2
57
80
100
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
On Characteristics (Note 3)
Dynamic Characteristics (Note4)
V
DS
=50V,V
GS
=0V,
F=1.0MHz
Switching Characteristics (Note 4)
V
DD
=50V,I
D
=40A
V
GS
=10V,R
GEN
=2.5Ω
-
-
-
V
DS
=80V,I
D
=40A,
V
GS
=10V
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
V
GS
=0V,I
S
=40A
-
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤
10 sec.
3. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25
℃
,V
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Pb Free Product
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NCE01H10D
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Pb Free Product
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Typical Electrical and Thermal Characteristics (Curves)
NCE01H10D
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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NCE01H10D
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9
BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8
Safe Operation Area
Figure 10
V
GS(th)
vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.1
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