VSKCS220/030
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 220 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
PRODUCT SUMMARY
I
F(AV)
220 A
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
The VSKCS220/030 Schottky rectifier common cathode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
110 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
220
30
18 000
0.57
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VSKCS220/030
30
UNITS
V
Document Number: 94633
Revision: 09-Mar-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKCS220/030
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 220 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
per module
per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 110 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 15 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
220
110
18 000
2000
99
22
mJ
A
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
110 A
Maximum forward voltage drop
V
FM
220 A
110 A
220 A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Maximum RMS insulation voltage
I
RM
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.59
0.78
0.57
0.82
10
650
7400
7.0
10 000
3000 (1 min)
3600 (1 s)
mA
pF
nH
V/μs
V
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
50 Hz
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Approximate weight
to
heatsink
busbar
Case style
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 150
0.52
°C/W
0.1
75
2.7
4
Nm
3
TO-240AA compatible
g
oz.
UNITS
°C
Mounting torque ± 10 %
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94633
Revision: 09-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKCS220/030
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 220 A
1000
Reverse Current - I
R
(mA)
10000
1000
100
10
1
0.1
0.01
0
5
10
15
20
25
Reverse Voltage - V
R
(V)
30
150°C
125°C
100°C
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
100
Tj = 150°C
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
00
Junction Capacitance - C
T
(pF)
10
Tj = 125°C
T =2 °
5C
J
Tj = 25°C
1
0.0
0.3
0.6
0.9
1.2
1.5
Forward Voltage Drop - V
FM
(V)
10
00
0
5
1
0
1
5
2
0
2
5
3
0
5
3
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
0.1
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94633
Revision: 09-Mar-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKCS220/030
Vishay Semiconductors
160
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 220 A
100
180°
120°
90°
60°
30°
140
120
100
80
60
40
20
0
0
50
100
see note (1)
Square wave (D=0.50)
80% rated Vr applied
80
DC
60
DC
RMS Limit
40
20
0
150
200
250
300
0
20 40 60 80 100 120 140 160 180
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100000
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
10000
1000
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94633
Revision: 09-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKCS220/030
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 220 A
ORDERING INFORMATION TABLE
Device code
VS
1
KC
2
S
3
22
4
0
5
/
030
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product
Circuit configuration:
KC = ADD-A-PAK - 2 diodes/common cathode
S = Schottky diode
Average rating (x 10)
Product silicon identification
Voltage rating (030 = 30 V)
CIRCUIT CONFIGURATION
(1)
+
(2)
-
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Document Number: 94633
Revision: 09-Mar-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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