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VSB3200-M3-54

产品描述High-Voltage Trench MOS Barrier Schottky Rectifier
文件大小71KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VSB3200-M3-54概述

High-Voltage Trench MOS Barrier Schottky Rectifier

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New Product
VSB3200
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TMBS
®
DO-201AD
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, dc-to-dc converters or
polarity protection application.
3.0 A
200 V
90 A
0.63 V
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A
T
J
max.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
(1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
VSB3200
200
3.0
90
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Note
(1)
Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
Document Number: 89144
Revision: 27-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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