CM300DY-12NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
NF-Series Module
300 Amperes/600 Volts
TC MEASURED POINT
(BASEPLATE)
A
F
E
F
E
G2
E2
G
J
B
N
C2E1
E2
C1
E1
G1
H
G
K
L
(2 PLACES)
K
D
K
M NUTS
(3 PLACES)
P
Q
P
Q
P
T THICK
U WIDTH
S
C
V
LABEL
R
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DY-12NF is a 600V (V
CES
),
300 Ampere Dual IGBTMOD™
Power Module.
Type
CM
Current Rating
Amperes
300
V
CES
Volts (x 50)
12
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
Inches
3.70
1.89
Millimeters
94.0
48.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.26 Dia.
M5 Metric
0.79
0.63
0.28
0.83
0.30
0.02
0.110
0.16
Millimeters
Dia. 6.5
M5
20.0
16.0
7.0
21.2
7.5
0.5
2.8
4.0
1.14+0.04/-0.02 29.0+1.0/-0.5
3.15±0.01
0.67
0.91
0.16
0.71
0.51
0.47
80.0±0.25
17.0
23.0
4.0
18.0
13.0
12.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-12NF
Dual IGBTMOD™ NF-Series Module
300 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
C
'
=
89°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤
150°C)
Mounting Torque M5, Main Terminal
Mounting Torque M6, Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
—
—
—
V
ISO
CM300DY-12NF
–40 to 150
–40 to 125
600
±20
300
600*
300
600*
780
30
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V, T
j
= 25°C
I
C
= 300A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
I
E
= 300A, V
GE
= 0V
Min.
—
—
5.0
—
—
—
—
Typ.
—
—
6.0
1.7
1.7
1200
—
Max.
1.0
0.5
7.5
2.2
—
—
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 300A,
V
GE1
= V
GE2
= 15V, R
G
= 2.1Ω,
Inductive Load
Switching Operation,
I
E
= 300A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
5.5
Max.
45
5.5
1.8
120
120
350
300
150
—
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-12NF
Dual IGBTMOD™ NF-Series Module
300 Amperes/600 Volts
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
'Q
R
th(c-f)
R
G
Test Conditions
Per IGBT 1/2 Module, T
C
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per FWDi 1/2 Module, T
C
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per IGBT 1/2 Module,
T
C
Reference Point Under Chips
Contact Thermal Resistance
External Gate Resistance
Per 1/2 Module, Thermal Grease Applied
—
2.1
0.07
—
—
21
°C/W
Ω
—
—
0.093
°C/W
—
—
0.25
°C/W
Min.
—
Typ.
—
Max.
0.16
Units
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
500
400
300
200
15
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
V
GE
=
20V
13
T
j
= 25
o
C
4
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
T
j
= 25°C
COLLECTOR CURRENT, I
C
, (AMPERES)
3
8
6
4
2
I
C
= 600A
11
2
I
C
= 300A
I
C
= 120A
10
1
100
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
100
0
200
300
400
500
600
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
C
ies
SWITCHING TIME, (ns)
10
3
t
d(off)
t
f
10
1
C
oes
10
2
t
d(on)
10
2
10
0
C
res
V
GE
= 0V
10
1
t
r
T
j
= 25°C
T
j
= 125°C
V
CC
= 300V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive Load
10
1
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-12NF
Dual IGBTMOD™ NF-Series Module
300 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE VS. VGE
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 300V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 25°C
Inductive Load
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
2
I
C
= 300A
16
V
CC
= 200V
V
CC
= 300V
12
8
4
V
CC
= 300V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
2
10
2
10
1
I
rr
t
rr
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
E
SW(on)
E
SW(off)
10
3
0
0
400
800
1200
1600
10
0
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
GATE CHARGE, Q
G
, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
Z
th
= R
th
¥ (NORMALIZED VALUE)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
2
10
0
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-1
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.16°C/W
(IGBT)
R
th(j-c)
=
0.25°C/W
(FWDi)
10
1
V
CC
= 300V
V
GE
= ±15V
I
C
= 300A
T
j
= 125°C
Inductive Load
C Snubber at Bus
E
SW(on)
E
SW(off)
10
-2
10
-2
10
0
10
0
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
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