CM200HG-130H
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
HVIGBT Module
200 Amperes/6500 Volts
A
D
C
H
DETAIL “A”
F
E B
M
G
K (4 PLACES)
DETAIL “B”
R
S
T
U
J
V
L (2 PLACES)
Q
P
N
H
V
BB
DD
Y
DETAIL “A”
W
Z
BB
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
X
CC
DETAIL “B”
AA
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Inches
5.51
2.87
4.88
2.24
0.85
0.51
0.20
1.73
M6 Metric
M8 Metric
0.64
1.59
1.10
Millimeters
140.0
73.0
124.0
57.0
21.6
12.9
5.0
44.0
M6
M8
16.2
40.4
28.0
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
BB
CC
DD
Inches
1.44
0.22
0.16
0.68
1.61
0.24
2.44
0.47
0.14
0.11
0.06
0.02
0.05 Dia.
10°
Millimeters
36.5
5.5
4.0
17.4
41.0
6.0
62.0
12.0
3.5
2.8
1.6
0.5
1.2 Dia.
10°
£
Low Drive Power
£
Low V
CE(sat)
£
Super-Fast Recovery
Free-Wheel Diode
Heat Sinking
£
Isolated Baseplate for Easy
Applications:
1.89+0.04/-0.0 48.0+1.0/-0.0
£
Traction
£
Medium Voltage Drives
£
High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(V
CES
), 200 Ampere Single
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
130
8/05
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Absolute Maximum Ratings,
T
j
= 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V
GE
= 0V, T
j
= -40°C)
Collector-Emitter Voltage (V
GE
= 0V, T
j
= +25°C)
Collector-Emitter Voltage (V
GE
= 0V, T
j
= +125°C)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (DC, T
c
= 80°C)
Peak Collector Current (Pulse)
Emitter Current** (T
c
= 25°C)
Emitter Surge Current** (Pulse)
Maximum Collector Dissipation (T
c
= 25°C, IGBT Part, T
j(max)
≤
125°C)
Partial Discharge (V
1
= 6900 V
rms
, V
2
= 5100 V
rms
, 60 Hz (Acc. to IEC 1287))
Max. Mounting Torque M8 Main Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Maximum Turn-Off Switching Current
(V
CC
≤
4500V, V
GE
= ±15V, R
G(off)
≥
72Ω, T
j
= 125°C)
Short Circuit Capability, Maximum Pulse Width
(V
CC
≤
4500V, V
GE
= ±15V, R
G(off)
≥
72Ω, T
j
= 125°C)
Maximum Reverse Recovery Instantaneous Power
(V
CC
≤
4500V, di
e
/dt
≤
1000A/
μ
s, T
j
= 125°C)
–
1200
kW
–
10
µs
Symbol
T
j
T
stg
T
opr
V
CES
V
CES
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
Q
pd
–
–
–
V
iso
–
CM200HG-130H
-40 to 150
-40 to 125
-40 to 125
5800
6300
6500
±20
200
400*
200
400*
2900
10
133
53
0.52
10200
400
Units
°C
°C
°C
Volts
Volts
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
pC
in-lb
in-lb
kg
Volts
Amperes
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
oprmax
rating (125°C).
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Static Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current*
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Emitter-Collector Voltage**
Turn-On Delay Time
Turn-On Rise Time
Turn-On Switching Energy
Turn-Off Delay Time
Turn-Off Fall Time 1
Turn-Off Fall Time 2
Turn-Off Switching Energy
Reverse Recovery Time 1**
Reverse Recovery Time 2**
Reverse Recovery Charge**
Reverse Recovery Energy**
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
V
EC
t
d(on)
t
r
E
on
t
d(off)
t
f1
t
f2
E
off
t
rr1
t
rr2
Q
rr
E
rec
Test Conditions
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C
I
C
= 20mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V, T
j
= 25°C
I
C
= 200A, V
GE
= 15V, T
j
= 125°C
V
CE
= 10V, V
GE
= 0V,
f = 100kHz,
T
j
= 25°C
V
CC
= 3600V, I
C
= 200A, V
GE
= 15V
I
E
= 200A, V
GE
= 0V, T
j
= 25°C
I
E
= 200A, V
GE
= 0V, T
j
= 125°C
V
CC
= 3600V, I
C
= 200A,
V
GE1
= -V
GE2
= 15V, R
G(on)
= 30Ω,
T
j
= 125°C, t
off
= 60µs, Inductive Load
V
CC
= 3600V, I
C
= 200A,
V
GE1
= -V
GE2
= 15V,
R
G(off)
= 72Ω,
T
j
= 125°C, t
off
= 60µs, Inductive Load
V
CC
= 3600V, I
E
= 200A,
di
e
/dt = -670A/
μ
s,
T
j
= 125°C,
t
off
= 60µs, Inductive Load
Min.
–
–
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
10
6.0
–
5.1
5.0
41.0
2.5
0.7
3.3
4.0
3.6
1.2
0.35
1.5
6.6
0.5
3.3
1.2
1.0
2.4
370
0.7
Max.
3.0
30.0
7.0
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Units
mA
mA
Volts
µA
Volts
Volts
nF
nF
nF
µC
Volts
Volts
µs
µs
J/P
µs
µs
µs
J/P
µs
µs
µC
J/P
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
18.0
Max.
42.0
66.0
–
Units
K/kW
K/kW
K/kW
Mechanical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Comparative Tracking Index
Clearance
Creepage Distance
Internal Inductance
Internal Lead Resistance
Symbol
CTI
–
–
L
C-E(int)
R
C-E(int)
Test Conditions
–
–
–
–
–
Min.
600
26.0
56.0
–
–
Typ.
–
–
–
54.0
–
Max.
–
–
–
–
–
Units
–
mm
mm
µH
mΩ
8/05
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
V
GE
= 0V
T
j
= 25°C
T
j
= 125°C
REVERSE RECOVERY ENERGY, E
rec
, (J/PULSE)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
2000
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25°C
16V
18V
V
GE
= 20V
8
7
6
5
4
3
2
1
0
1.2
1.0
0.8
0.6
0.4
0.2
0
V
CC
= 3600V
V
GE
= ±15V
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
15V
14V
13V
1600
1200
800
12V
10V
400
0
0
4
8
12
16
20
0
100
200
300
400
500
0
100
200
300
400
500
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
EMITTER CURRENT, I
E
, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY ENERGY, E
rec
, (J/PULSE)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
1.2
REVERSE RECOVERY CHARGE, Q
rr
, (mC)
1.2
1.0
0.8
0.6
0.4
0.2
0
REVERSE RECOVERY CHARGE, Q
rr
, (mC)
1.2
V
CC
= 3600V
V
GE
= ±15V
I
C
= 200A
L
S
= 200nH
T
j
= 125°C
1.0
0.8
0.6
0.4
0.2
0
V
CC
= 3600V
V
GE
= ±15V
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
1.0
0.8
0.6
0.4
0.2
0
V
CC
= 3600V
V
GE
= ±15V
I
C
= 200A
L
S
= 200nH
T
j
= 125°C
0
100
200
300
400
500
0
20
40
60
80
100
120
0
20
40
60
80
100
120
EMITTER CURRENT, I
E
, (AMPERES)
GATE RESISTANCE, R
G
, (
Ω
)
GATE RESISTANCE, R
G
, (
Ω
)
TRANSFER CHARACTERISTICS
(TYPICAL)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
4000
COLLECTOR CURRENT, I
C
, (AMPERES)
10
1
V
CE
= 20V
T
j
= 25°C
T
j
= 125°C
10
1
3500
3000
2500
2000
1500
1000
500
0
0
SWITCHING TIME, t
d(off)
, (µs)
10
0
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
SWITCHING TIME, t
d(on)
, (µs)
10
0
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
5
10
15
20
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
4
8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
10
1
10
1
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
4.0
3.5
SWITCHING LOSS, E
off
, (J/PULSE)
SWITCHING TIME, t
f
, (µs)
SWITCHING TIME, t
r
, (µs)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
10
0
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
10
0
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
100
200
300
400
500
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
4.0
3.5
SWITCHING LOSS, E
on
, (J/PULSE)
SWITCHING LOSS, E
off
, (J/PULSE)
4.0
SWITCHING LOSS, E
on
, (J/PULSE)
4.0
V
CC
= 3600V
V
GE
= ±15V
I
C
= 200A
L
S
= 200nH
T
j
= 125°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
CC
= 3600V
V
GE
= ±15V
R
G(off)
= 72Ω
R
G(on)
= 30Ω
L
S
= 200nH
T
j
= 125°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
V
CC
= 3600V
V
GE
= ±15V
I
C
= 200A
L
S
= 200nH
T
j
= 125°C
100
200
300
400
500
20
40
60
80
100
120
80
100
120
COLLECTOR CURRENT, I
C
, (AMPERES)
GATE RESISTANCE, R
G
, (
Ω
)
GATE RESISTANCE, R
G
, (
Ω
)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
10
2
C
ies
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
TRANSIENT IMPEDANCE, Rth
(j-c)
1.2
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
1.0
0.8
0.6
0.4
0.2
10
1
SINGLE PULSE
T
C
= 25°C
IGBT = R
th(j-c)
Q =
42°K/kW
FWDI = R
th(j-c)
D =
66°K/kW
C
oes
10
0
V
GE
= 15V
f = 100kHz
T
j
=
25°C
C
res
10
-1
10
-1
10
0
10
1
10
2
0
10
-3
10
-2
10
-1
TIME, (s)
10
0
10
1
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
8/05
5
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