Surface Mount Transient Voltage Suppressors (TVS)
SMAJ Series
Description
The SMAJ series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
5.0 To 440 V
400W
Uni-directional
Bi-directional
Features
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
For surface mounted applications in order to optimize board space
Low leakage
Uni and Bidirectional unit
Glass passivated junction
Low inductance
Excellent clamping capability
400W Peak power capability at 10
×
1000µs waveform Repetition rate
(duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to V
BR
min
Typical I
R
less than 5μA above 12V
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient
ΔV
BR
= 0.1%
×
V
BR
@25°C×
ΔT
Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Functional Diagram
Bi-directional
Cathode
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
P
PPM
I
PP
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
400
See Next Table
1.0
40
3.5/5.0
-55 to +150
Unit
Watts
Amps
Watt
Amps
Voltage
°C
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at T
L
=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
Operating junction and Storage Temperature Range.
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. V
F
< 3.5V for V
BR
< 200V and V
F
< 6.5V for V
BR
> 201V.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMAJ Series
5.0 To 440 V
400W
Electrical Characteristics (T
A
=25℃ unless otherwise noted)
Part Number
Uni
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ19
SMAJ19A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
Bi
SMAJ5.0C
SMAJ5.0CA
SMAJ6.0C
SMAJ6.0CA
SMAJ6.5C
SMAJ6.5CA
SMAJ7.0C
SMAJ7.0CA
SMAJ7.5C
SMAJ7.5CA
SMAJ8.0C
SMAJ8.0CA
SMAJ8.5C
SMAJ8.5CA
SMAJ9.0C
SMAJ9.0CA
SMAJ10C
SMAJ10CA
SMAJ11C
SMAJ11CA
SMAJ12C
SMAJ12CA
SMAJ13C
SMAJ13CA
SMAJ14C
SMAJ14CA
SMAJ15C
SMAJ15CA
SMAJ16C
SMAJ16CA
SMAJ17C
SMAJ17CA
SMAJ18C
SMAJ18CA
SMAJ19C
SMAJ19CA
SMAJ20C
SMAJ20CA
SMAJ22C
SMAJ22CA
SMAJ24C
SMAJ24CA
SMAJ26C
SMAJ26CA
SMAJ28C
SMAJ28CA
SMAJ30C
SMAJ30CA
SMAJ33C
SMAJ33CA
SMAJ36C
SMAJ36CA
SMAJ40C
SMAJ40CA
SMAJ43C
SMAJ43CA
Marking
Uni
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BA
BB
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
CL
CM
CN
CP
CQ
CR
CS
CT
Bi
WD
WE
WF
WG
WH
WK
WL
WM
WN
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XD
XE
XF
XG
XH
XK
XL
XM
XN
XP
XQ
XR
XS
XT
XA
XB
XU
XV
XW
XX
XY
XZ
YD
YE
YF
YG
YH
YK
YL
YM
YN
YP
YQ
YR
YS
YT
Reverse
Stand-Off
Voltage
V
RWM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
19.0
19.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40.0
40.0
43.0
43.0
Breakdown
Voltage V
BR
(V)
@I
T
MIN
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.00
10.00
11.10
11.10
12.20
12.20
13.30
13.30
14.40
14.40
15.60
15.60
16.70
16.70
17.80
17.80
18.90
18.90
20.00
20.00
21.13
21.10
22.20
22.20
24.40
24.40
26.70
26.70
28.90
28.90
31.10
31.10
33.30
33.30
36.70
36.70
40.00
40.00
44.40
44.40
47.80
47.80
MAX
7.30
7.37
7.00
7.37
8.15
7.37
8.82
7.98
9.51
8.60
10.20
9.21
10.90
9.83
11.50
10.40
12.20
11.10
13.60
12.30
14.90
13.50
16.30
14.70
17.60
15.90
19.10
17.20
20.40
18.50
21.80
19.70
23.10
20.90
24.40
22.10
25.76
23.30
27.10
24.50
29.80
26.90
32.60
29.50
35.30
31.90
38.00
34.40
40.70
36.80
44.90
40.60
48.90
44.20
54.30
49.10
58.40
52.80
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
34.0
30.8
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
Maximum
Peak
Pulse
Current
I
PP
(A)
41.67
43.48
35.09
38.83
32.52
35.71
30.08
33.33
27.97
31.01
26.67
29.41
25.16
27.78
23.67
25.97
21.28
23.53
19.90
21.98
18.18
20.10
16.81
18.60
15.50
17.24
14.87
16.39
13.89
15.38
13.11
14.49
12.42
13.70
11.76
13.00
11.17
12.35
10.15
11.27
9.30
10.28
8.56
9.50
8.00
8.81
7.48
8.26
6.78
7.50
6.22
6.88
5.60
6.20
5.22
5.76
Maximum
Reverse
Leakage I
R
@V
RWM
(μA)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
2/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMAJ Series
5.0 To 440 V
400W
Electrical Characteristics
Part Number
Uni
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ80
SMAJ80A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ140
SMAJ140A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ180
SMAJ180A
SMAJ190
SMAJ190A
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
SMAJ440A
Note:
Bi
SMAJ45C
SMAJ45CA
SMAJ48C
SMAJ48CA
SMAJ51C
SMAJ51CA
SMAJ54C
SMAJ54CA
SMAJ58C
SMAJ58CA
SMAJ60C
SMAJ60CA
SMAJ64C
SMAJ64CA
SMAJ70C
SMAJ70CA
SMAJ75C
SMAJ75CA
SMAJ78C
SMAJ78CA
SMAJ80C
SMAJ80CA
SMAJ85C
SMAJ85CA
SMAJ90C
SMAJ90CA
SMAJ100C
SMAJ100CA
SMAJ110C
SMAJ110CA
SMAJ120C
SMAJ120CA
SMAJ130C
SMAJ130CA
SMAJ140C
SMAJ140CA
SMAJ150C
SMAJ150CA
SMAJ160C
SMAJ160CA
SMAJ170C
SMAJ170CA
SMAJ180C
SMAJ180CA
SMAJ190C
SMAJ190CA
SMAJ200CA
SMAJ220CA
SMAJ250CA
SMAJ300CA
SMAJ350CA
SMAJ400CA
SMAJ440CA
(T
A
=25℃ unless otherwise noted) (Continue)
Marking
Uni
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RA
RB
RU
RV
RW
RX
RY
RZ
SD
SE
SF
SG
SH
SK
SA
SB
SL
SM
SN
SP
SQ
SR
SS
ST
SU
SV
SW
SX
SZ
DE
DG
DK
DM
Bi
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZA
ZB
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VA
VB
VL
VM
VN
VP
VQ
VR
VS
VT
VU
VV
VW
VX
VZ
HE
HG
HK
HM
Reverse
Stand-Off
Voltage
V
RWM
(V)
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
80.0
80.0
85.0
85.0
90.0
90.0
100.0
100.0
110.0
110.0
120.0
120.0
130.0
130.0
140.0
140.0
150.0
150.0
160.0
160.0
170.0
170.0
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
Breakdown
Voltage V
BR
(V)
@I
T
MIN
50.00
50.00
53.30
53.30
56.70
56.70
60.00
60.00
64.40
64.40
66.70
66.70
71.10
71.10
77.80
77.80
83.30
83.30
86.70
86.70
88.96
88.80
94.40
94.40
100.00
100.00
111.00
111.00
122.00
122.00
133.00
133.00
144.00
144.00
155.68
155.00
167.00
167.00
178.00
178.00
189.00
189.00
201.00
201.00
211.21
211.00
224.00
246.00
279.00
335.00
391.00
447.00
492.00
MAX
61.10
55.30
65.10
58.90
69.30
62.70
73.30
66.30
78.70
71.20
81.50
73.70
86.90
78.60
95.10
86.00
102.00
92.10
106.00
95.80
108.80
97.60
115.00
104.00
122.00
111.00
136.00
123.00
149.00
135.00
163.00
147.00
176.00
159.00
190.40
171.00
204.00
185.00
218.00
197.00
231.00
209.00
244.80
220.00
258.40
232.00
247.00
272.00
309.00
371.00
432.00
494.00
543.00
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103.0
93.6
107.0
96.8
114.0
103.0
125.0
113.0
134.0
121.0
139.0
126.0
143.2
129.6
151.0
137.0
160.0
146.0
179.0
162.0
196.0
177.0
214.0
193.0
231.0
209.0
250.6
226.8
268.0
243.0
287.0
259.0
304.0
275.0
322.2
291.6
340.1
307.8
324.0
356.0
405.0
486.0
567.0
648.0
713.0
Maximum
Peak
Pulse
Current
I
PP
(A)
4.98
5.50
4.68
5.17
4.39
4.85
4.15
4.59
3.88
4.27
3.74
4.13
3.51
3.88
3.20
3.54
2.99
3.31
2.88
3.17
2.79
3.09
2.65
2.92
2.50
2.74
2.23
2.47
2.04
2.26
1.87
2.07
1.73
1.91
1.60
1.76
1.49
1.65
1.39
1.54
1.32
1.45
1.24
1.37
1.18
1.30
1.23
1.12
0.99
0.82
0.71
0.62
0.56
Maximum
Reverse
Leakage I
R
@V
RWM
(μA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1. Suffix 'A ' denotes 5% tolerance device. Without 'A' denotes 10% tolerance device
2. Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices
3. For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
3/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMAJ Series
5.0 To 440 V
400W
Ratings and Characteristic Curves (T
A
=25°C unless otherwise noted)
Figure 1 - Peak Pulse Power Rating Curve
100
Figure 2 - Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage %
100
P
PPM
- Peak Pulse Power (kW)
80
10
60
40
1
20
0.1
0.1
1
10
100
t
d
- Pulse Width (μs)
1000
10000
0
0
25
50
75
100
125
T
A
-Ambient temperature(°C)
150
175
Figure 3 - Pulse Waveform
150
Figure 4 - Typical Junction Capacitance
10000
I
PPM
- Peak Pulse Current, % I
RSM
t
r
=10µsec
Peak Value
IPPM
100
T
J
=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Bi-directional
@zero bins
1000
Uni-directional @V
RWM
Uni-directional
@zero bins
Half Value
I
PPM
(I
PPM
/2)
50
10/1000µsec. Waveform
as defined by R.E.A
Cj (pF)
100
10
Tj=25°C
f=1.0MHz
Vsig=50mVp-p
Bi-directional @V
RWM
0
0
t
c
1.0
2.0
t - Time (ms)
3.0
4.0
1
1.0
10.0
100.0
1000.0
V
BR
-Reverse Breakdown Voltage (V)
Figure 5 - Steady State Power Derating Curve
P
M(AV)
, Steady State Power Dissipation (W)
1.0
Figure 6 - Maximum Non-Repetitive Surge Current
50
I
FSM
-Peak Forward Surge Current
(A)
T
J
=T
J
max.
8.3 ms Single Half Sine-Wave
0.8
40
0.6
0.4
30
20
0.2
0.0
0
25
50
75
100
125
150
175
200
T
L
- Lead Temperature(°C)
10
0
1
10
Number of Cycles at 60Hz
100
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
4/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors (TVS)
SMAJ Series
5.0 To 440 V
400W
I-V Curve Characteristics
Physical Specifications
Weight
Case
Polarity
Terminal
0.002 ounce, 0.061 gram
JEDEC DO-214AC Molded Plastic over
glass passivated junction
Color band denotes cathode except
Bipolar
Matte Tin-plated leads, Solderable per
JESD22-B102D
Environmental Specifications
Temperature Cycle
Pressure Cooker
High Temp. Storage
HTRB
Thermal Shock
JESD22-A104
JESD22-A102
JESD22-A103
JESD22-A108
JESD22-A106
Soldering Parameters
Reflow Condition
T
P
Ramp-up
Critical Zone
T
L
to T
P
Lead–free assembly
150°C
200°C
60 -180 Seconds
3°C/second max
3°C/second max
217°C
60 -150 Seconds
260 +0/-5°C
of
actual
peak
20 -40 Seconds
6°C/second max
8 minutes Max
280°C
-Temperature Min (T
s(min)
)
Pre Heat
-Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
T
L
T
S(max)
Temperature
Ramp-down
T
S(min)
Preheat
Average ramp up rate ( Liquidus Temp T
L
)
to peak
T
S(max)
to TL - Ramp-up Rate
- Temperature (T
L
) (Liquidus)
Time to peak temperature
(t 25℃ to peak)
25
Time
Reflow
- Time (min to max) (t
s
)
Peak Temperature (T
P
)
Time within 5°C
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
5/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
