Feb 2009
PRELIMINARY
1600V 160A Thyristor Module
RoHS Compliant
MIMMK160S160B
Features
·
Isolation voltage 3500 V~
·
Industrial Standard Package
·
High Surge Capability
·
Glass Passivated Chips
·
Simple Mounting
·
Electrically Isolated by DBC Ceramic
Applications
·
DC Motor Control and Drives
·
Battery Charges
·
Welders
·
Power Converters
·
Lighting Control
·
Heat and Temperature Control
Advantages
·
Space and weight savings
·
Improved temperature and power cycling
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
V
RRM
/V
DRM
I
T(AV)
I
T(RMS)
T
C
=85℃,180° conduction, half sine wave;
as AC switch;
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=0;
I
TSM
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
=0;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=V
RRM
;
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
= V
RRM
;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=0;
It
2
T
C
=25°C unless otherwise specified
Value
1600
160
355
4870
5100
4100
4300
119
130
84
92.5
50
1000
3500
-40½125
-40½150
Unit
V
A
A
A
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
=0;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=V
RRM
;
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
= V
RRM
;
=8.
KA s
2
I
DRM
/I
RRM
dV/dt
V
ISOL
T
J
T
STG
T
J
=125℃,V
D
=V
R
=1600V;
T
J
=125℃, exponential to 67% rated V
DRM
50Hz, all terminals shorted, t=1s, I
ISOL
≤1mA ;
Max. junction operating temperature range
Max. storage temperature range
mA
V/us
V~
℃
℃
MIMMK160S160B
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
V
TO
r
t
I
H
I
L
V
TM
P
GM
P
GM(AV)
I
GM
-V
GT
V
GT
16.7% x
π
x I
AV
<
I
<π
x I
AV
,T
J
=130°C;
I
>
π
x I
AV
, T
J
=130°C;
16.7% x
π
x I
AV
<
I
<π
x I
AV
,T
J
=130°C;
I
>
π
x I
AV
, T
J
=130°C;
V
AK
= 6V, initial I
T
=30A;
Anode supply =6V, resistive load=1 ,
gate pulse =10V, 100us;
I
TM
=502A, t
d
=10 ms, half sine;
t
p
≤5ms,
Tj=125°C;
f=50Hz, Tj=125°C;
t
p
≤5ms,
Tj=125°C;
V
A
=6V, R
A
=1
,
Tj=-40°C;
V
A
=6V, R
A
=1 ;
V
A
=6V, R
A
=1
,
Tj=125°C;
V
A
=6V, R
A
=1
,
Tj=-40°C;
I
GT
V
GD
I
GD
di/dt
V
A
=6V, R
A
=1 ;
V
A
=6V, R
A
=1
,
Tj=125°C;
V
AK
=V
DRM
, Tj=125℃
I
TM
=400A, rated V
DRM
, Tj=125℃
1.54
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
V
mA
A/us
mA
V
V
W
W
A
V
T
C
=25°C unless otherwise specified
Min.
Typ. Max. Unit
0.80
0.98
1.67
1.38
200
400
V
V
m
m
mA
mA
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
R
thjc
R
THCS
Md
Weight
DC operation, per junction;
Mounting surface smooth,flat and greased, per junction;
Mounting torque(M6)
Terminal connection torque(M6)
Typical value
T
C
=25°C unless otherwise specified
value
0.18
0.1
4 to 6
156
Unit
K/W
K/W
N·m
g
MIMMK160S160B
Characteristic curves
130
120
110
100
90
80
70
0
60
120
Average forward current(A)
Conduction angle
130
Maximun allowable case tem (℃)
R
THJC
(DC)=0.18 K/W
120
110
100
90
80
70
60
0
30
Maximun allowable case tem (℃)
R
THJC
(DC)=0.18 K/W
Conduction period
30
60
90
120
60
90
120
180
180
180
DC
300
100
200
Average on-state current (A)
Figure 1.
current rating characteristics
Maximun average on-state power loss (W)
Per junction
T
J
=125℃
180
120
90
60
30
Maximun average on-state power loss (W)
400
350
300
250
200
150
100
50
0
Conduction angle
Figure 2.
current rating characteristics
400
350
300
250
200
150
100
50
0
0
Conduction period
DC
180
120
90
60
30
RMS limit
RMS limit
Per junction
T
J
=125℃
30 60 90 120 150 180 210 240 270
Average on-state current(A)
0
20 40 60 80 100 120 140 160 180
Average on-state current(A)
Figure 3.
on-state power loss characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
4500
4000
3500
3000
2500
2000
Per junction
At any rated load condition and with
rated V
RRM
applied following surge
Initial T
J
=125℃
@60Hz 0.0083 s
@50Hz 0.01 s
5000
4500
Figure 4.
on-state power loss characteristics
Maximum non repetitive surge
current versus pulse train duration.
control of conduction may not be
maintained.
Initial T
J
= 125℃
no voltage reapplied
rated V
RRM
reapplied
4000
3500
3000
2500
2000
1500
0.01
Per junction
0.1
Pulse Train Duration (s)
1
1500
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Figure 5.
Maximum Non-Repetitive Surge Current
Figure 6.
Maximum Non-Repetitive Surge Current
MIMMK160S160B
600
Maximum Total On-state Power Loss (W)
500
400
300
200
100
0
0
300
Total RMS Output Current (A)
100
200
400
Per module
T
J
=125℃
180
120
90
60
30
Conduction angle
600
Maximum Total On-state Power Loss (W)
500
400
300
200
100
0
0
25
R
THSA
=0.02K/W-Delta R
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
50
75
100
125
Figure 7. On-State Power Loss Characteristics-1
10000
Instantaneous On-state Current (A)
Transient Thermal Impedance Z
thJC
Figure.8
1
On-State Power Loss Characteristics-2
Steady State Value
(DC Operation)
1000
T
J
=25℃
T
J
=125℃
100
0.1
10
Per junction
0
0
4
1
2
3
Instantaneous On-state Voltage (V)
5
0.01
0.01
1
0.1
Square Wave Pulse Duration (s)
10
Figure.9
On State Voltage Drop Characteristics
Figure.10 Thermal Impedance ZthJC Characteristics
(1) P
GM
= 200 W, tp = 300s
(2) P
GM
= 60 W, tp = 1 ms
(3) P
GM
= 30 W, tp = 2 ms
(4) P
GM
= 12 W, tp = 5 ms
100
Rectangular gate pulse
Instantaneous Gate Voltage (V)
a)Recommended load line
for rated di/dt:20V, 20Ω
tr =0.5s, tp≥6 s
b)Recommended load line
10
for
≤30%
rated di/dt:15V, (a)
40Ω
(b)
T
J
=-40℃
T
J
=25℃
T
J
=125℃
1
V
GD
I
GD
(4)
(3)
(2)
(1)
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
MIMMK160S160B
Package Outline (Dimensions in mm)
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