MIMMG300DR170B
1700V 300A IGBT Module
RoHS Compliant
FEATURES
□
Ultra Low Loss
□
High Ruggedness
□
High Short Circuit Capability
□
V
CE(sat)
With Positive Temperature Coefficient
□
With Fast Free-Wheeling Diodes
□
Passivation: alpha-si and silicon nitride plus polyimide
APPLICATIONS
□
Inverter
□
Convertor
□
Welder
□
SMPS and UPS
□
Induction Heating
GD Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
T
Vj
T
STG
V
isol
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Peak Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
AC, t=1min
Limited by T
Vjmax
V
GE
=0V, T
Vj
≥25°C
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
1700
±20
300
600
1250
-40 to +150
-40 to +125
3000
V
V
A
A
W
°C
°C
V
Free-Wheeling Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
T
Vj
=45°C,V
R
=0V,t=10ms,Sine
T
Vj
=45°C,V
R
=0V,t=8.3ms,Sine
T
C
=25°C 180° rect.
T
C
=95°C 180° rect.
1700
300
200
420
2000
2200
V
A
A
A
A
A
MIMMG300DR170B
ELECTRICAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
V
CE
=V
GE
, I
C
=20mA
I
C
=300A, V
GE
=15V, T
Vj
=25°C
I
C
=300A, V
GE
=15V, T
Vj
=125°C
I
C
=300A, V
GE
=15V, T
Vj
=150°C
V
CE
=1700V, V
GE
=0V, T
Vj
=25°C
I
CES
Collector Leakage Current
V
CE
=1700V, V
GE
=0V, T
Vj
=125°C
V
CE
=1700V, V
GE
=0V, T
Vj
=150°C
I
GES
Q
ge
C
ies
C
oes
C
res
Gate Leakage Current
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CC
=900V,
t
d(on)
Turn - on Delay Time
I
C
=300A,
R
G
=7.5Ω,
V
GE
=±15V,
t
r
Rise Time
Inductive Load
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=150°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=150°C
V
CC
=900V,
t
d(off)
Turn - off Delay Time
I
C
=300A,
R
G
=7.5Ω,
V
GE
=±15V,
t
f
Fall Time
Inductive Load
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=150°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=150°C
E
on
Turn - on Switching Energy
V
CC
=900V,I
C
=300A,
R
G
=7.5Ω,
V
GE
=±15V,
Inductive Load
T
Vj
=125°C
T
Vj
=150°C
T
Vj
=125°C
T
Vj
=150°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CE
=0V, V
GE
=±15V, T
Vj
=125°C
V
CE
=900V, I
C
=300A , V
GE
=±15V
-500
1.8
20
1.06
0.74
450
480
490
385
405
405
910
1020
1060
420
485
495
72
84
138
146
980
5.3
5.8
2.30
2.65
2.75
0.5
2.5
4.0
500
6.3
V
V
V
V
mA
mA
mA
nA
µC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
V
CE(sat)
E
off
Turn - off Switching Energy
I
SC
Short Circuit Current
t
ps
c
≤10µS
, V
GE
=15V, T
Vj
=150°C
V
CC
=1300V, V
CEMCHIP
≤1700V
Free-Wheeling Diode
V
F
I
RRM
Q
rr
E
rec
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
I
F
=300A , V
GE
=0V, T
Vj
=25°C
I
F
=300A , V
GE
=0V, T
Vj
=150°C
I
F
=300A , V
R
=1000V
di
F
/dt=-1000A/μs
T
Vj
=125°C
2.2
2.45
235
33
48
V
V
A
µC
mJ
MIMMG300DR170B
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended（M6）
Recommended（M6）
3
3
300
Min.
Typ.
Max.
0.10
0.18
5
5
Unit
K /W
K /W
N· m
N· m
g
600
V
GE
=15V
600
500
T
Vj
=25°C
500
400
I
C
(A)
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
400
I
C
(A)
T
Vj
=125°C
300
200
100
0
T
Vj
=125°C
0
1
2
3
4
5
6
V
CE
（V）
Figure1. Typical Output characteristics
V
CE
（V）
Figure2. Typical Output characteristics
1000
800
E
on
E
off
(mJ)
600
E
off
V
CC
=900V
R
G
=7.5Ω
V
GE
=±15V
T
Vj
=150°C
800
700
E
on
600
E
on
E
off
(mJ)
500
V
CC
=900V
I
C
=300A
V
GE
=±15V
T
Vj
=150°C
E
on
400
300
200
100
E
off
400
200
0
0
300
600
900
0
0
10
20
30
40
50
60
I
C
（A）
Figure3. Switching Energy vs. Collector Current
R
G
（Ω）
Figure4. Switching Energy vs. Gate Resistor
MIMMG300DR170B
20
100
V
V
CC
=900V
C
ies
V
CC
=1300V
T
VJ
=25°C
15
10
C (nF)
V
GE
=0V
f=1MHz
V
GE
(V)
10
T
VJ
=125°C
I
C
=300A
T
Vj
=25°C
C
oes
1
5
C
res
0
0
400
800
1200
1600
2000
0.1
0
5
10
15
20
25
30
35
Q
g
（nC）
Figure5. Gate Charge characteristics
700
600
500
I
Cpuls
(A)
400
300
200
100
0
0
T
Vj
=125°C
V
GE
=15V
V
CE
（V）
Figure6. Typical Capacitances vs. V
CE
600
500
400
300
200
100
0
T
Vj
=25°C
I
F
(A)
T
Vj
=125°C
800
1200
1600 1800
400
V
CE
（V）
Figure7. Reverse Biased Safe Operating Area
0
2.0 2.5 3.0 3.5 4.0
V
F
（V）
Figure8. Diode Forward Characteristics
0.5 1.0 1.5
80
70
60
50
E
rec
(mJ)
40
30
20
10
0
0
1
R
G
=7.5Ω
V
CE
=900V
T
Vj
=125°C
Diode
0.1
Z
thJC
(K/W)
IGBT
0.01
100
200
300
400
500
600
0.001
0.0001
0.001
0.01
0.1
1
I
F
(A)
Figure9. Switching Energy vs. I
F
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG300DR170B
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline
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