MIMMG300D060B6EN
600V 300A IGBT Module
RoHS Compliant
FEATURES
□
High short circuit capability,self limiting short circuit current
□
V
CE(sat)
with positive temperature coefficient
□
Fast switching and short tail current
□
Free wheeling diodes with fast and soft reverse recovery
□
Low switching losses
APPLICATIONS
□
High frequency switching application
□
Medical applications
□
Motion/servo control
□
UPS systems
GD Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
Vj
=25°C
T
C
=25°C
T
C
=70°C
t
p
=1ms
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=70°C
t
p
=1ms
T
Vj
=25°C
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
600
±20
400
300
600
940
V
V
A
A
A
W
600
400
300
600
8000
V
A
A
A
A
2
s
T
Vj
=125°C, t=10ms, V
R
=0V
MIMMG300D060B6EN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
V
CE
=300V, I
C
=300A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
V
CC
=300V,I
C
=300A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
V
CC
=300V,I
C
=300A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
V
CC
=300V,I
C
=300A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
t
ps
c
≤6µS
, V
GE
=15V
T
Vj
=125°C,V
CC
=360V
（
Per IGBT）
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
V
CE
=V
GE
, I
C
=4.8mA
I
C
=300A, V
GE
=15V, T
Vj
=25°C
I
C
=300A, V
GE
=15V, T
Vj
=125°C
V
CE
=600V, V
GE
=0V, T
Vj
=25°C
V
CE
=600V, V
GE
=0V, T
Vj
=125°C
V
CE
=0V,V
GE
±15V,
T
Vj
=125°C
-400
1
3.2
19
0.57
110
120
50
60
490
520
60
70
2.0
3.1
9
12
1500
0.16
4.9
5.8
1.45
1.6
1
5
400
6.5
V
V
V
mA
mA
nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
Rise Time
t
d(off)
Turn - off Delay Time
t
f
Fall Time
E
on
Turn - on Energy
E
off
Turn - off Energy
I
SC
R
thJC
Diode
V
F
I
RRM
Q
rr
E
rec
R
thJCD
Short Circuit Current
Junction-to-Case Thermal Resistance
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
I
F
=300A , V
GE
=0V, T
Vj
=25°C
I
F
=300A , V
GE
=0V, T
Vj
=125°C
I
F
=300A , V
R
=300V
di
F
/dt=-6500A/μs
T
Vj
=125°C
1.55
1.50
235
24.0
6.2
0.32
V
V
A
µC
mJ
K /W
Junction-to-Case Thermal Resistance
（
Per Diode）
MIMMG300D060B6EN
MODULE CHARACTERISTICS
Symbol
T
Vj max
T
Vj op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameter
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Recommended（M6）
Recommended（M6）
AC, t=1min
350
3
2.5
320
5
5
N· m
N· m
g
-40
-40
3000
T
C
=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
175
150
125
Unit
°C
°C
°C
V
600
V
GE
=15V
600
480
360
240
T
Vj
=125°C
480
360
240
120
0
0
I
C
(A)
I
C
(A)
T
Vj
=25°C
T
Vj
=125°C
120
0
1.2 1.6
2.0 2.4
V
CE
（V）
Figure1. Typical Output characteristics
0.4
0.8
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
（V）
Figure2. Typical Output characteristics
600
V
CE
=20V
45
480
T
Vj
=25°C
35
E
on
E
off
(mJ)
V
CC
=300V
I
C
=300A
V
GE
=±15V
T
Vj
=125°C
E
on
I
C
(A)
360
25
240
120
T
Vj
=125°C
15
E
off
5
0
5
9
10
11
8
V
GE
（V）
Figure3. Typical Transfer characteristics
6
7
0
12
16
20
8
R
G
（Ω）
Figure4. Switching Energy vs. Gate Resistor
0
4
MIMMG300D060B6EN
30
25
20
I
C
(A)
15
10
E
on
E
off
V
CC
=300V
R
G
=2.4
Ω
V
GE
=±15V
T
Vj
=125°C
700
600
500
400
300
200
100
R
G
=2.4
Ω
V
GE
=±15V
T
Vj
=125°C
E
on
E
off
(mJ)
5
0
0
200
400
600
0
I
C
（A）
Figure5. Switching Energy vs. Collector Current
300 400 500 600 700
V
CE
（V）
Figure6. Reverse Biased Safe Operating Area
0
100
200
600
480
E
rec
(mJ)
360
I
F
(A)
240
120
0
T
Vj
=125°C
10
8
6
4
I
F
=300
A
V
CE
=300V
T
Vj
=125°C
T
Vj
=25°C
2
0
0
0.8
1.6
1.2
2.0
V
F
（V）
Figure7. Diode Forward Characteristics
0.4
0
4
8
12
16
R
G
（Ω）
Figure8. Switching Energy vs. Gate Resistor
10
8
6
4
2
0
0
1
R
G
=2.4Ω
V
CE
=300V
T
Vj
=125°C
Diode
0.1
Z
thJC
(K/W)
E
rec
(mJ)
IGBT
0.01
200
400
600
I
F
(A)
Figure9. Switching Energy vs. Forward Current
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG300D060B6EN
Figure11. Circuit Diagram
M6
2.8x0.5
8.5
22.0
18
93.0
6.0
Φ6.5
6.0
7 6
48.0
16.0
28.0
108.0
28.0
20.0
Dimensions (mm)
Figure12. Package Outline
6.0
1
2
3
4 5
15.0
62.0
30.0
30.5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
