MIMMG200S060B6N
600V 200A IGBT Module
RoHS Compliant
FEATURES
·
Ultra Low Loss
·
High Ruggedness
·
High Short Circuit Capability
·
Positive Temperature Coefficient
·
Integrated Gate Resistor
APPLICATIONS
·
Invertor
·
Convertor
·
Welder
·
SMPS and UPS
·
Induction Heating
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
T
C
=25°C
T
C
=50°C
T
C
=25°C, t
p
=1ms
T
C
=50°C, t
p
=1ms
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
600
±20
230
200
460
400
735
-40 to +150
-40 to +125
AC, t=1min
3000
V
V
A
A
A
A
W
°C
°C
V
I
Cpuls
P
tot
T
J
T
STG
V
isol
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Free-Wheeling Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
T
C
=25°C
T
C
=50°C
600
200
160
285
600
660
V
A
A
A
A
A
MIMMG200S060B6N
ELECTRICAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Energy
V
CC
=300V, I
C
=200A
R
G
=1.5Ω,V
GE
=±15V
T
J
=25°C
Inductive Load
V
CC
=300V, I
C
=200A
R
G
=1.5Ω,V
GE
=±15V
T
J
=125°C
Inductive Load
V
CC
=300V, I
C
=200A
R
G
=1.5Ω
V
GE
=±15V
Inductive Load
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CC
=300V, I
C
=200A , V
GE
=±15V
V
CE
=V
GE
, I
C
=4mA
I
C
=200A, V
GE
=15V, T
J
=25°C
I
C
=200A, V
GE
=15V, T
J
=125°C
V
CE
=600V, V
GE
=0V, T
J
=25°C
V
CE
=600V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±20V
-0.6
5
890
9
0.9
0.8
163
43
253
33
180
49
285
41
3
4.6
4.1
6.3
1
0.6
7
4.5
5.5
1.95
2.2
0.5
6.5
2.45
V
V
V
mA
mA
μA
Ω
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Turn - off Switching Energy
Free-Wheeling Diode
V
F
t
rr
I
RRM
Q
rr
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
I
F
=200A , V
GE
=0V, T
J
=25°C
I
F
=200A , V
GE
=0V, T
J
=125°C
I
F
=200A , V
R
=300V
di
F
/dt=-1000A/μs
T
J
=125°C
1.25
1.2
249
107
15.5
1.6
V
V
ns
A
µC
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended（M6）
Recommended（M5）
3
2.5
150
Min.
Typ.
Max.
0.17
0.3
5
5
Unit
K /W
K /W
N· m
N· m
g
MIMMG200S060B6N
420
350
280
I
C
(A)
210
T
J
=125°C
420
350
280
I
C
(A)
T
J
=25°C
V
CE
=20V
210
140
T
J
=125°C
T
J
=25°C
140
70
0
0
70
1.5
2.5
3.5
2
3
V
CE(sat)
（V）
Figure1. Typical Output characteristics
0.5
1
0
0
6
8
10
12
14
V
GE
（V）
Figure2. Typical Transfer characteristics
2
4
18
15
12
9
E
off
V
CC
=300V
R
G
=1.5ohm
V
GE
=±15V
T
J
=125°C
18
15
12
E
on
E
off
(mJ)
9
E
off
V
CC
=300V
I
C
=200A
V
GE
=±15V
T
J
=125°C
E
on
E
on
E
off
(mJ)
6
E
on
6
3
0
3
0
0
120 180 240 300 360 420
I
C
（A）
Figure3. Switching Energy vs. Collector Current
60
21
9
12
15 18
R
G
（ohm）
Figure4. Switching Energy vs. Gate Resistor
0
3
6
1000
1000
t
d(off)
t
d(off)
t
d(on)
t (ns)
t (ns)
t
d(on)
100
t
r
t
f
V
CC
=300V
R
G
=1.5ohm
V
GE
=±15V
T
J
=125°C
100
t
r
t
f
V
CC
=300V
I
C
=200A
V
GE
=±15V
T
J
=125°C
10
0
120 160 200 240 280
I
C
（A）
Figure5. Switching Times vs. Collector Current
40
80
10
6
8
10 12
14
R
G
（ohm）
Figure6. Switching Times vs. Gate Resistor
4
0
2
MIMMG200S060B6N
25
20
15
10
5
0
0
0.1
V
CC
=300V
I
C
=200A
T
J
=25°C
V
GE
=0V
f=1MHz
10
C
ies
V
GE
(V)
C (nF)
1
C
oes
C
res
400
800
600
1000
Q
g
（nC）
Figure7. Gate Charge characteristics
200
0
5
10
15
20
25
30
35
V
CE
（V）
Figure8. Typical Capacitances vs. V
CE
600
500
400
I
Cpuls
(A)
300
200
100
0
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
1200
1000
800
I
Csc
(A)
600
400
200
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
≤10µs
300 400 500 600 700
V
CE
（V）
Figure9. Reverse Biased Safe Operating Area
200
100
200 300 400 500 600 700
V
CE
（V）
Figure10. Short Circuit Safe Operating Area
0
100
300
250
200
I
C
(A)
T
J
=150°C
V
GE
≥15V
420
350
280
T
J
=125°C
I
F
(A)
150
100
50
0
0
210
140
T
J
=25°C
70
0
25
50
75 100 125 150
T
C
Case Temperature(°C)
Figure11. Rated Current vs. T
C
175
0
1.5 2.0 2.5
3
3.5
V
F
（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG200S060B6N
1
1
10
Z
thJC
(K/W)
-1
10
-1
Duty
0.5
0.2
0.1
0.05
Single Pulse
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-2
Z
thJC
(K/W)
1
10
-2
10
-3
10
-3
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
3
2
4
5
6
7
Figure15. Circuit Diagram
M5
2.8x0.5
8.5
1
2
3
7 6
6.5
80.0
Dimensions in mm
Figure16. Package Outlines
4.5
23.0
23.0
17.0
4 5
17.0
34.0
4.5
94.0
23.0
29.5
30.5
stm32/stm8
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