MIMMG200DR120UK
1200V 200A IGBT Module
RoHS Compliant
FEATURES
·
Ultra Low Loss
·
High Ruggedness
·
High Short Circuit Capability
·
Positive Temperature Coefficient
·
With Fast Free-Wheeling Diodes
APPLICATIONS
·
Invertor
·
Convertor
·
Welder
·
SMPS and UPS
·
Induction Heating
GD Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
T
C
=25°C
T
C
=80°C
T
C
=25°C, t
p
=1ms
T
C
=80°C, t
p
=1ms
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
±20
300
210
600
420
1400
-40 to +150
-40 to +125
AC, t=1min
3000
V
V
A
A
A
A
W
°C
°C
V
I
Cpuls
P
tot
T
J
T
STG
V
isol
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Free-Wheeling Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
T
C
=25°C
T
C
=80°C
1200
250
170
250
1860
1920
V
A
A
A
A
A
MIMMG200DR120UK
ELECTRICAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Energy
V
CC
=600V, I
C
=200A
R
G
=5Ω,V
GE
=±15V
T
J
=25°C
Inductive Load
V
CC
=600V, I
C
=200A
R
G
=5Ω,V
GE
=±15V
T
J
=125°C
Inductive Load
V
CC
=600V, I
C
=200A
R
G
=5Ω
V
GE
=±15V
Inductive Load
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CE
=V
GE
, I
C
=8mA
I
C
=200A, V
GE
=15V, T
J
=25°C
I
C
=200A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±20V
V
CC
=600V, I
C
=200A , V
GE
=±15V
-400
2100
14.9
1.04
0.7
125
60
420
60
135
60
490
75
17
24.8
13.6
21.6
5
6.2
1.8
2.0
0.4
6
400
1
7
V
V
V
mA
mA
nA
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Turn - off Switching Energy
Free-Wheeling Diode
V
F
t
rr
I
RRM
Q
rr
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
I
F
=200A , V
GE
=0V, T
J
=25°C
I
F
=200A , V
GE
=0V, T
J
=125°C
I
F
=200A , V
R
=800V
di
F
/dt=-1000A/μs
T
J
=125°C
2.0
1.7
260
110
13.5
2.44
2.20
V
V
ns
A
µC
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended（M6）
Recommended（M6）
3
2.5
285
Min.
Typ.
Max.
0.09
0.22
5
5
Unit
K /W
K /W
N· m
N· m
g
MIMMG200DR120UK
600
500
400
I
C
(A)
300
T
J
=125°C
600
500
400
I
C
(A)
T
J
=25°C
T
J
=25°C
V
CE
=20V
300
200
100
T
J
=125°C
200
100
0
0
1.5
2.5
3.5
2
3
V
CE(sat)
（V）
Figure1. Typical Output characteristics
0.5
1
0
0
6
8
10
12
14
V
GE
（V）
Figure2. Typical Transfer characteristics
2
4
240
200
160
120
E
on
V
CC
=600V
R
G
=5ohm
V
GE
=±15V
T
J
=125°C
100
80
60
40
20
V
CC
=600V
I
C
=200A
V
GE
=±15V
T
J
=125°C
E
on
E
on
E
off
(mJ)
80
40
0
0
E
off
E
on
E
off
(mJ)
E
off
300 400 500 600 700
I
C
（A）
Figure3. Switching Energy vs. Collector Current
200
10
3
t
d(off)
100
0
35
15
20
25 30
R
G
（ohm）
Figure4. Switching Energy vs. Gate Resistor
0
5
10
10
4
10
3
t (ns)
10
2
t (ns)
t
d(on)
t
r
t
f
V
CC
=600V
R
G
=5ohm
V
GE
=±15V
T
J
=125°C
t
d(off)
t
d(on)
10
2
t
f
t
r
V
CC
=600V
I
C
=200A
V
GE
=±15V
T
J
=125°C
10
120 180 240 300 360 420
I
C
（A）
Figure5. Switching Times vs. Collector Current
1
0
60
10
1
15 20
25 30
35
R
G
（ohm）
Figure6. Switching Times vs. Gate Resistor
10
0
5
MIMMG200DR120UK
25
20
15
10
5
0
0
0.1
V
CC
=600V
I
C
=200A
T
J
=25°C
100
V
GE
=0V
f=1MHz
C
ies
10
C (nF)
V
GE
(V)
C
oes
1
C
res
0.8
1.6
1.2
2.0
Q
g
（µC）
Figure7. Gate Charge characteristics
0.4
0
5
10
15
20
25
30
35
V
CE
（V）
Figure8. Typical Capacitances vs. V
CE
700
600
500
I
Cpuls
(A)
400
300
200
100
0
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
3600
3000
2400
I
Csc
(A)
1800
1200
600
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
≤10µs
600 800 1000 1200 1400
V
CE
（V）
Figure9. Reverse Biased Safe Operating Area
400
200
400 600 800 1000 1200 1400
V
CE
（V）
Figure10. Short Circuit Safe Operating Area
0
200
350
300
250
I
C
(A)
200
150
100
50
0
0
25
50
75 100 125 150
T
C
Case Temperature(°C)
Figure11. Rated Current vs. T
C
175
T
J
=150°C
V
GE
≥15V
600
500
400
T
J
=125°C
I
F
(A)
300
200
T
J
=25°C
100
0
0
1.5 2.0 2.5
3
3.5
V
F
（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG200DR120UK
1
1
10
Z
thJC
(K/W)
-1
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-1
10
-2
10
-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-3
Z
thJC
(K/W)
10
-3
10
-4
10
10
10
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10
-4
-3
-2
-1
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
1
3
2
4
5
Figure15. Circuit Diagram
M6
2.8x0.5
8.5
22.0
18
93.0
6.0
Φ6.5
6.0
7 6
48.0
16.0
28.0
108.0
28.0
20.0
Dimensions in mm
Figure16. Package Outlines
6.0
1
2
3
4 5
15.0
62.0
30.0
30.5
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