UNISONIC TECHNOLOGIES CO., LTD
4N65Z
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N65Z
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
1
TO-220F
FEATURES
* R
DS(ON)
= 2.5Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65ZL- TF3-T
4N65ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-778.A
4N65Z
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
260
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
36
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
3.47
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-778.A
4N65Z
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°С
4.0
2.5
670
90
11
35
100
60
80
20
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
△
BV
DSS
/△T
J
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 325V, I
D
= 4.0A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 520V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
V
GS
= 0 V, I
D
= 250μA
650
V
DS
= 650 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
I
D
=250μA, Referenced to 25°C
2.0
0.6
2.4
520
70
8
13
45
25
35
15
3.4
7.1
1.4
4.4
17.6
250
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-778.A
4N65Z
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-778.A
4N65Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
V
GS
R
G
R
L
V
DD
Power MOSFET
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-778.A
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
