UNISONIC TECHNOLOGIES CO., LTD
4N60K
4A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220F
TO-220F1
Power MOSFET
DESCRIPTION
The UTC
4N60K
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
TO-251
FEATURES
* R
DS(ON)
< 2.5Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( C
RSS
= typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F
TO-220F1
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Ordering Number
Lead Free
Halogen Free
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TM3-T
4N60KG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-806.D
4N60K
MARKING INFORMATION
PACKAGE
TO-220F
TO-220F1
TO-251
MARKING
Power MOSFET
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QW-R502-806.D
4N60K
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
100
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
36
Power Dissipation
P
D
W
TO-251
50
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 12.5mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
83
3.47
2.5
UNIT
°С/W
°С/W
PARAMETER
TO-220F/TO-220F1
Junction to Ambient
TO-251
TO-220F/TO-220F1
Junction to Case
TO-251
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QW-R502-806.D
4N60K
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
10
μA
100 nA
-100 nA
V/°С
5.0
2.5
670
90
11
35
100
60
80
20
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
=0V, I
D
=250μA
600
V
DS
=600V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=600V, V
GS
=0V, T
C
=125°С
Forward
V
GS
=30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.6
2.2
520
70
8
13
45
25
35
15
3.4
7.1
1.4
4.4
17.6
250
1.5
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QW-R502-806.D
4N60K
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-806.D
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