18N25
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
18A, 250V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F
The UTC
18N25
is an N-channel enhancement mode power
MOSFET using UTC’s advanced planar stripe and DMOS technology
to provide perfect performance.
This technology can withstand high energy pulse in the avalanche
and commutation mode. It can provide minimum on-state resistance
and high switching speed.
This device is generally applied in active power factor correction
and high efficient switched mode power supplies.
1
TO-263
FEATURES
* R
DS(ON)
=0.16Ω @ V
GS
=10V
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
18N25L-TF3-T
18N25G-TF3-T
18N25L-TQ2-T
18N25G-TQ2-T
18N25L-TQ2-R
18N25G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
18N25L-TA3-T
(1) Packing Type
(2) Package Type
(3) Lead Free
(1) T: Tube, R: Tape Reel
(2) TF3: TO-220F, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free
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QW-R502-786.B
18N25
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
250
V
Gate to Source Voltage
V
GSS
±20
V
Continuous
I
D
18
A
Drain Current
Pulsed (Note 2)
I
DM
72
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
945
mJ
Avalanche Current (Note 2)
I
AR
18
A
TO-220F
40
W
Power Dissipation
P
D
TO-263
138
°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting T
J
=25°C , L=5.2mH, I
AS
=18A, V
DD
=50V, R
G
=25Ω.
4. Drain current limited by maximum junction temperature.
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
3.1
0.9
UNIT
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220F
Junction to Case
TO-263
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN
250
1
100
-100
2.0
4.0
0.16 0.24
2200 2860
330 430
25
40
30
10
10
15
130
30
100
45
TYP MAX UNIT
V
µA
nA
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=250V, V
GS
=0V
Forward
V
GS
=20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=18A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=125V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=18A (Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=18A,
R
G
=25Ω (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=18A, V
GS
=0V
Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
25
195
45
150
18
72
1.4
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QW-R502-786.B
18N25
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-786.B
18N25
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge
V
GS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
Q
GS
Q
G
10V
Power MOSFET
Q
GD
Charge
Test Circuit
Resistive Switching
V
DS
R
G
R
D
90%
Waveforms
10V
V
GS
V
DS
V
DD
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Test Circuit
Unclamped Inductive Switching
Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Test Circuit
Waveforms
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www.unisonic.com.tw
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QW-R502-786.B
18N25
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
250
Drain Current, I
D
(µA)
200
150
100
50
0
200
150
100
50
0
0
0
60
180
240 300
120
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.6
1.8 2.4
1.2
3.0 3.6
Gate Threshold Voltage, V
TH
(V)
Drain-Source On-State Resistance
Characteristics
20
V
GS
=10V, I
D
=14A
16
Drain Current vs. Source to Drain Voltage
25
20
15
Drain Current, I
D
(A)
12
Drain Current, I
D
(A)
0
2.5
0.5
1
1.5
2
Drain to Source Voltage, V
DS
(V)
8
4
0
10
5
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-786.B
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