UNISONIC TECHNOLOGIES CO., LTD
11N80
Preliminary
Power MOSFET
11A, 812V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-3P
The
UTC 11N80
is an N-Channel power MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, low gate charge and high switching speed.
The
UTC 11N80
is suitable for high speed switching applications
in power supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
1
FEATURES
TO-230
* R
DS(ON)
<0.9Ω@V
GS
=10V
* Low gate charge ( typical 60 nC)
* High switching speed
ORDERING INFORMATION
Package
TO-3P
TO-230
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
11N80L-T3P-T
11N80G-T3P-T
11N80L-TC3-T
11N80G-TC3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING INFORMATION
PACKAGE
MARKING
TO-3P
TO-230
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-893.b
11N80
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
RATINGS
UNIT
800
V
±30
V
11
A
Continuous
Drain Current
Pulsed
11
A
Avalanche Current
44
A
Single Pulsed
960
mJ
Avalanche Energy
Repetitive
12
mJ
Peak Diode Recovery dv/dt
4.0
V/ns
TO-3P
297
Power Dissipation (T
C
=25°C)
P
D
W
TO-230
156
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=15mH, I
AS
=11.7A, V
DD
=50V, R
G
=25Ω starting T
C
=25°C.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TO-3P
TO-230
TO-3P
TO-230
θ
JA
θ
JC
RATINGS
40
62.5
0.42
0.80
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-893.b
11N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
800
1.0
V
V/°C
10
µA
+100 nA
-100 nA
3
5
0.9
V
Ω
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=800V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=640V, I
D
=11A,
Gate to Source Charge
Q
GS
R
G
=25Ω
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=11A, R
G
=25Ω,
V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=11.0A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=11A, d
IF
/dt=100A/µS
Body Diode Reverse Recovery Charge
Q
RR
2530 3290 pF
215 280 pF
23
30
pF
60
13
25
60
130
130
85
80
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
130
270
270
180
11
44
1.4
1000
170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-893.b
11N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-893.b
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
