CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C866H8
Issued Date : 2014.02.10
Revised Date :
Page No. : 1/10
MTA65N20H8
Description
BV
DSS
I
D
@V
GS
=10V
R
DSON(TYP)
V
GS
=10V, I
D
=11A
V
GS
=5V, I
D
=5A
200V
24A
74mΩ
74mΩ
The MTA65N20H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Dynamic dv/dt rating
•
Repetitive Avalanche Rated
•
Pb-free lead plating and Halogen-free package
Symbol
MTA65N20H8
Outline
DFN5×6
Pin 1
G：Gate
D：Drain
S：Source
MTA65N20H8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C866H8
Issued Date : 2014.02.10
Revised Date :
Page No. : 2/10
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
(Note 1)
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
(Note 1)
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=2mH, I
D
=20A, V
DD
=50V
(Note 2)
Repetitive Avalanche Energy @ L=0.05mH
(Note 3)
T
C
=25℃
(Note 1)
T
C
=100℃
(Note 1)
Total Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
200
±20
24
17
3.7
*3
2.9
*3
77
*1
20
400
11
*2
107
53.5
2.5
1.6
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
(Note 2)
(Note 4)
R
θJA
R
θJA
Value
1.4
50
125
Unit
°C/W
°C/W
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.
When mounted on the minimum pad size recommended (PCB mount), t≤10s.
Ordering Information
Device
MTA65N20H8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA65N20H8
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Spec. No. : C866H8
Issued Date : 2014.02.10
Revised Date :
Page No. : 3/10
Min.
200
-
0.5
-
-
-
-
-
-
Typ.
-
0.2
0.8
43
-
-
-
74
74
3059
161
104
60
8.4
28.5
78
50
290
130
-
-
0.82
120
400
Max.
-
-
1.5
-
±
100
1
25
95
100
-
-
-
-
-
-
-
-
-
-
24
77
1.3
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=11A
V
GS
=
±
20V
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=11A
V
GS
=5V, I
D
=5A
V
GS
=0V, V
DS
=25V, f=1MHz
Dynamic
Ciss
-
Coss
-
Crss
-
Qg
*1, 2
-
Qgs
*1, 2
-
Qgd
*1, 2
-
t
d(ON)
*1, 2
-
tr
-
*1, 2
t
d(OFF)
*1, 2
-
t
f
*1, 2
-
Source-Drain Diode
I
S
*1
-
I
SM
*3
-
V
SD
*1
-
trr
-
Qrr
-
pF
nC
I
D
=20A, V
DS
=160V, V
GS
=10V
ns
V
DS
=100V, I
D
=20A, V
GS
=10V, R
G
=25Ω
A
V
ns
nC
I
S
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTA65N20H8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C866H8
Issued Date : 2014.02.10
Revised Date :
Page No. : 4/10
unit : mm
MTA65N20H8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
80
70
I
D
, Drain Current(A)
60
50
40
30
20
10
0
0
4
8
12
16
V
DS
, Drain-Source Voltage(V)
20
V
GS
=1.6V
V
GS
=1.4V
V
GS
=1.8V
V
GS
=2V
Spec. No. : C866H8
Issued Date : 2014.02.10
Revised Date :
Page No. : 5/10
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V,
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2V
2.5V
3V
4.5V
10V
V
GS
=1.5V
0.8
0.6
0.4
0.2
100
Tj=150°C
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=11A
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=10V, I
D
=11A
2
1.6
1.2
0.8
R
DSON
@ Tj=25°C : 74mΩ typ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA65N20H8
CYStek Product Specification
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
