SMG301K
Elektronische Bauelemente
640mA,
30V,R
DS(ON)
1
Ω
N-Channel Enhancement Mode Power Mos.FET
A suffix of "-C" specifies halogen & lead-free
Description
The SMG301K utilized advanced processing
techniques to achieve the lowest possible on-
resistance, extremely efficient and cost-effectiveness
device. The SMG301K is universally used for
all commercial-industrial applications.
SC-59
Dim
A
B
C
D
G
H
A
L
3
Top View
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Features
* RoHS Compliant
Product
* Simple Drive Requirement
* Small Package Outline
S
2
J
K
L
B
1
S
Marking :
301E
All Dimension in mm
D
G
D
G
H
Drain
C
K
J
S
Gate
Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1,2
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
30
±16
640
500
950
1.38
0.01
Unit
V
V
mA
mA
mA
W
W /
o
C
o
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
90
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG301K
Elektronische Bauelemente
640mA,
30V,R
DS(ON)
1
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
o
o
Unless otherwise specified)
Symbol
BV
DSS
Min.
30
_
Typ.
_
Max.
_
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1m
A
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±16V
V
DS
=30V,V
GS
=0
V
DS
=24V,V
GS
=0
V
GS
=10V, I
D
=500mA
o
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
0.06
_
_
_
_
_
_
_
0.5
_
_
_
_
1.5
±
10
1
100
1
2
3
1.6
_
_
_
Static Drain-Source On-Resistance
R
DS(ON)
_
_
Ω
V
GS
=4.5V, I
D
=400mA
V
GS
=2.7V, I
D
=200mA
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
1
0.5
0.5
12
10
56
29
32
8
6
600
nC
I
D
=600mA
V
DS
=50V
V
GS
=4.5V
_
_
_
_
_
_
_
V
DD
=30V
I
D
=600mA
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=52
Ω
_
_
_
50
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
mS
V
DS
=10V, I
D
=600mA
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
DS
Min.
_
Typ.
_
Max.
1.2
Unit
V
Test Condition
I
S
=1.2A, V
GS
=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
4
SMG301K
Elektronische Bauelemente
640mA,
30V,R
DS(ON)
1
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Char acteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistan ce
v.s. Ju nction Temperat ure
Fig 5. Forward Char acteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
Fig 6. Gate Threshold Voltage v.s.
Ju nction Temperat ure
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG301K
Elektronische Bauelemente
640mA,
30V,R
DS(ON)
1
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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