polyfet rf devices
SM705
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
150.0 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
230 Watts
Junction to
Case Thermal
Resistance
o
0.75 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
13.5 A
RF CHARACTERISTICS ( 150.0 WATTS OUTPUT )
SYMBOL PARAMETER
Gps
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
13
70
20:1
TYP
MAX
UNITS TEST CONDITIONS
dB
%
Relative
Idq = 0.80 A, Vds =
Idq = 0.80 A, Vds =
28.0
V, F =
150
MHz
28.0
V, F =
150
MHz
150
MHz
η
VSWR
Idq = 0.80 A, Vds =
28.0
V, F =
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
2
6.0
0.20
35.00
250.0
15.0
160.0
MIN
65
5.0
1
5
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
Ids = 100.00 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.50 A, Vgs = Vds
Vds = 10V, Vgs = 5V
12.50 A
Vgs = 20V, Ids =
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
SM705
POUT VS PIN GRAPH
SM705 Pin vs Pout Freq=150MHz, VDS=28V,
Idq=1A
200
18
17
160
Pout
16
15
120
14
13
Gain
12
11
Efficiency@165W = 70%
0
0
2
4
6
8
10
12
14
16
18
20
P in in W a tts
10
9
1
0
4
8
12
16
20
24
28
1000
CAPACITANCE VS VOLTAGE
S1A 5 DICE CAPACITANCE
Coss
CAPACITANCE IN PFS
100
Ciss
80
10
Crss
40
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
S1A 5 DIE ID & GM Vs VG
100.00
S1A 5 DIE IV
40
35
30
ID IN AMPS
25
20
15
10
5
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
14
VDS IN
Vg=6v
VOLTS
vg=8v
16
0
18
20
vg=12v
Id
Id in amps; Gm in mhos
10.00
1.00
gM
0.10
0
2
4
6
8
10
Vgs in Volts
12
14
16
18
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
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